HFD630_HFU630
Dec 2012
BV
DSS
= 200 V
HFD630 / HFU630
200V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 22 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
100% Avalanche Tested
GS
=10V
R
DS(on) typ
I
D
= 7.2 A
D-PAK
2
1
1
3
2
3
I-PAK
HFD630
HFU630
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25
)*
T
C
=25
unless otherwise specified
Parameter
Value
200
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
(Note 1)
7.2
4.6
28.8
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
160
7.2
4.6
4.5
2.5
46
0.37
-55 to +150
300
Power Dissipation (T
C
= 25
- Derate above 25
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
R
R
JC
JA
JA
Parameter
Junction-to-Case
Junction-to-Ambient*
Junction-to-Ambient
Typ.
--
--
--
Max.
2.7
50
110
Units
* When mounted on the minimum pad size recommended (PCB Mount)
HFD630_HFU630
Electrical Characteristics
T
C
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 3.6 A
2.0
--
--
0.34
4.0
0.4
V
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
I
D
= 250
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
200
--
--
--
--
--
--
0.2
--
--
--
--
--
--
1
10
100
-100
V
BV
DSS
Breakdown Voltage Temperature
Coefficient
/ T
J
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
550
85
22
720
110
29
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 160 V, I
D
= 9.0 A,
V
GS
= 10 V
V
DS
= 100 V, I
D
= 9.0 A,
R
G
= 25
--
--
--
--
--
--
--
11
70
60
65
22
4.0
11
25
140
120
130
30
--
--
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 7.2 A, V
GS
= 0 V
I
S
= 9.0 A, V
GS
= 0 V
di
F
(Note 4)
--
--
--
--
--
--
--
--
140
0.87
7.2
28.8
1.5
--
--
A
V
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=3mH, I
AS
=9.0A, V
DD
=50V, R
G
=25 , Starting T
J
=25 C
3. I
SD
DD
DSS
, Starting T
J
=25 C
4. Pulse Test : Pulse Width
5. Essentially Independent of Operating Temperature
HFD630_HFU630
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
1000
900
800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 40V
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 100V
V
DS
= 160V
Capacitances [pF]
700
600
500
400
300
200
100
0
-1
10
10
0
C
iss
8
C
oss
C
rss
1. V
GS
= 0 V
2. f = 1 MHz
6
4
2
D
= 9A
0
10
1
0
3
6
9
12
15
18
21
24
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HFD630_HFU630
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
8
Operation in This Area
is Limited by R
DS(on)
10 s
100 s
6
I
D
, Drain Current [A]
1 ms
10 ms
100 ms
I
D
, Drain Current [A]
10
1
4
10
0
* Notes :
1. T
C
= 25
o
C
DC
2
2. T
J
= 150
o
C
3. Single Pulse
10
-1
10
0
10
1
10
2
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
Z
JC
(t), Thermal Response
10
0
0.2
0.1
0.05
10
-1
* Notes :
1. Z
JC
(t) = 2.7
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
0.02
0.01
single pulse
P
DM
t
1
10
-3
10
-2
10
-1
t
2
10
0
10
1
10
-2
10
-5
10
-4
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
HFD630_HFU630
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
