DATA
SHEET
1310NM FP LASER
FOR 10GBASE-LRM
SC AND LC TOSA
HFE6X62-561
FEATURES:
1310nm FP laser
Very low power dissipation
SC and LC optical receptacles
10Gbps direct modulation
Impedance matching inside the
laser package
Differential electrical interface
Compatible with all 10GBE MSAs
(XFP, X2, XPAK, XENPAK)
The HFE6x62-561 is specifically designed for applications based on the IEEE
10GBASE-LRM optical standard. The TOSA is designed to meet the fiber launch
conditions specified for the multimode and single mode optical fiber options.
Excellent optical performance is achieved by matching the electrical character-
istics of the TOSA and laser to the external circuitry. Separate, differential laser
bias and modulation pins significantly reduce the amount of electrical power
required at the module level, and help to reduce the overall electro-magnetic
emissions. The TOSA is designed to be paired with the linear ROSA HFD6x40-
417 available at www.finisar.com/aoc.php.
Part Number
HFE6362-561
HFE6162-561
Description
1310nm SC TOSA with FP laser
1310nm LC TOSA with FP laser
HFE6X62-561
1310NM FP LASER FOR 10GBASE-LRM
ABSOLUTE MAXIMUM RATINGS
Parameter
INVISIBLE LASER RADIATION
DO NOT VIEW DIRECTLY WITH
OPTICAL INSTRUMENTS
10mW at 820 - 860nm
CLASS 1M LASER PRODUCT
COMPLIES WITH IEC/EN 60825-1
Ed1.2:2001
COMPLIES WITH 21 CFR 1040.10
AND 1040-10.11 EXCEPT FOR
DEVIATION PURSUANT TO
LASER NOTICE NO.50
DATED 26 JULY 2001
Rating
-40oC to +90oC
-5 to +85oC
260oC, 10 seconds
20 mW
2V
130 mA
2 mA
10V
Storage temperature
Case Operating temperature
Lead solder temperature
Continuous Optical Power
Laser Diode Reverse Voltage
Advanced Optical Components
600 Millennium Drive,
Allen, TX 75013
Laser Diode Continuous Forward Current
Monitor Photodiode Reverse Current
LASER RADIATION
AVOID EXPOSURE TO BEAM
CLASS 1M LASER PRODUCT
Monitor Photodiode Reverse Voltage
NOTICE:
Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operations section for extended periods of
time may affect reliability.
NOTICE:
The inherent design of this component causes it
to be sensitive to electrostatic discharge (ESD). To prevent
ESD-induced damage and/or degradation to equipment,
take normal ESD precautions when handling this product.
HFE6X62-561
ELECTRICAL-OPTICAL CHARACTERISTICS
Parameter
Threshold Current
Operating Current
Modulation Current
Output Power
Slope Efficiency
E ncircled Flux
Extinction Ratio
LA (wiggle)
Wavelength
Spectral Width
Rel ative Intensity Noise
Modulation Bandwidth
Rise/fall time
Transmittter Waveform
Dispersion Penalty
Forward Voltage
Laser Resistance
Monitor Current
Tracking Error
Monitor Dark Current
Monitor Diode
Capacitance
Optical Return Loss
Tolerance
Input Impedance (Diff)
Diff. Return Loss
Case to Signal Isolation
Test Condition
T = 25°C
T = T
RANGE
T = 25 °C
T = T
RANGE
T = 25 °C
T = T
RANGE
I
F
= I
OP
T = 25 °C, SMF
r < 5 µm
r < 11 µm
T=range
T = T
RANGE
T = 25 °C
T = T
RANGE
T = 25 °C
I=Iop, 20dB
ORL
I=I
OP
, T= T
RANGE
I=I
OP
, T=25 °C
Symbol
I
TH
I
OP
I
MOD
L
OP
η
EF
5
EF
10
LA
λ
∆λ
RIN
20
S
21,3dB
T
r
T
f
TWDP
T= T
RANGE
,I=I
OP
T= T
RANGE
,I=I
OP
T=25°C, I=I
OP
,
V
B
=-2.5V
T=T
MAX
T=T
MIN
V
b
=-2.5V,
T=T
RANGE
V
B
=-2.5V
V
f
R
L
I
MON
TE
I
D
C
MON
ORLT
R
DIFF
0.1< f <7.5 GHz
7.5 <f< 12.5
GHz
S
DD11
R
ISO
10
12
44
50
56
-10
-6
1
6
200
-1.25
-1.25
8
8
9.5
35
35
50
50
4.7
1.6
12
2000
1.25
1.25
100
10
1265
1295
1.4
-136
-3
0.018
30
86
3.5
Min
Typ
10
45
70
25
60
0.5
Max
25
Units
mA
mA
mA
dBm
mW/mA
%
6.0
1.5
1355
1315
3.0
dB
dB
nm
Nm, rms
dB /
Hz
GHz
ps
dB
V
Ohms
uA
dB
nA
pF
dB
Ω
dB
kΩ
Note 11
Note 8
Note 9
Note 10
Note 6
Note 7
Note 1
ER ~ 4.5 dB
ER ~ 6.5 dB
Note 2
Note 3
Note 4
Note 5
Notes
ELECTRO-OPTICAL CHARACTERISTICS (TCASE=25 oC, TRANGE, CASE = -5 to 80oC, 10.3125Gbps, PRBS 231-1)
HFE6X62-561
1310NM FP LASER FOR 10GBASE-LRM
NOTES
1.
Operating current is the average bias current required to
meet the ER, rise/fall, and bandwidth specifications. The
target operating condition is 35 mA over threshold at
high temperature, 30mA over threshold at RT.
Output power specification must be met into both single-
mode fiber and 62/125 multi-mode fiber.
Encircled flux is measured at the end of a 10m patchcord
through a fiber shaker per IEC 61280-1-4.
TOSA would be capable of meeting other specifications
when modulated over this ER range.
Maximum change in power as fiber is rotated by 360º.
See Figure 1 below for the present 10GBASE-LRM spectral
width vs. wavelength specification, and TOSA requirement
curve that is further restricted to 3 nm for margin, but is
limited by the IEEE curve below 1275nm.
9.
7.
Corresponds to 10GBASE-LRM specification of RIN20OMA
–128 dB/√Hz which is equivalent to –136 dB/√Hz with ER
= 3.5 dB. RIN averaged up to 15 GHz. RIN to be measured
with -20 dB back reflection at worst case polarization with
a single mode fiber.
Measured with an optical receiver with a 10.3125 Gb/s
filter (4th order Bessel-Thomson filter with 3 dB
bandwidth = 0.75*bitrate).
TWDP is measured as defined in IEEE 802.3aq.
2.
8.
3.
4.
5.
6.
10. Laser slope resistance is measured between “Bias+” and
“Bias-“ pins.
11. Tracking error is defined as the coupled power difference
at Tmax or Tmin (relative to 25ºC) where the back monitor
current, Imon, is held constant at the value found at 25ºC
at I=Iop.
Maximum Spectral Width vs Wavelength
5
Max. R.M.S. Spectral Width (nm)
4
3
2
1
0
1250
1270
1290
1310
1330
1350
1370
Wavelength (nm)
HFE6X62-561
TYPICAL PERFORMANCE CHARACTERISTICS
20
o
C
80
o
C
10.7Gbps, SONET Mask
PINOUT
PIN
1
2
3
4
5
6
7
8
Function
Laser BIAS +
MPD Cathode
Ground
Laser MOD +
Laser MOD -
Ground
MPD Anode
Laser BIAS -
Pin 1
