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HFM104-L

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA-L, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:FORMOSA

厂商官网:http://www.formosams.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
FORMOSA
包装说明
R-PDSO-F2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-F2
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大重复峰值反向电压
400 V
最大反向恢复时间
0.05 µs
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
Base Number Matches
1
文档预览
Chip High Effciency Rectifiers
HFM101-L THRU HFM107-L
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 1
DS-121319
Chip High Effciency Rectifiers
HFM101-L THRU HFM107-L
1.0A Surface Mount High
Effciency Rectifiers-50-1000V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current capability.
Ultrafast recovery time for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. HFM101-L-H.
Formosa MS
SMA-L
0.209(5.3)
0.185(4.7)
Package outline
0.012(0.3) Typ.
0.114(2.9)
0.091(2.3)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-214AC / SMA-L
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.032(0.8) Typ.
0.080(2.0)
0.063(1.6)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
CONDITIONS
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
C
J
T
STG
-65
20
+175
MIN.
TYP.
MAX.
1.0
30
5.0
150
µA
pF
O
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 125 C
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
50
100
200
400
600
800
1000
V
RMS
*2
(V)
35
70
140
280
420
560
700
C
SYMBOLS
HFM101-L
HFM102-L
HFM103-L
HFM104-L
HFM105-L
HFM106-L
HFM107-L
*3
V
R
(V)
50
100
200
400
600
800
1000
*4
V
F
(V)
*5
t
rr
(ns)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
1.00
1.30
50
-55 to +150
*4 Maximum forward voltage@I
F
=1.0A
1.70
75
*5 Maximum Reverse recovery time, note 1
Note 1. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 2
DS-121319
Rating and characteristic curves (HFM101-L THRU HFM107-L)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
10
M1
03
-L
HF
M1
04
-L
INSTANTANEOUS FORWARD CURRENT,(A)
M1
01
-L~
HF
HF
.1
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
H
1.0
FM
10
5-
L~
H
FM
10
7-
L
25
50
75
100
125
150
175
LEAD TEMPERATURE (°C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
40
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
30
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
140
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
120
100
80
60
40
20
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 3
DS-121319
Chip High Effciency Rectifiers
HFM101-L THRU HFM107-L
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Formosa MS
Symbol
1
2
1
2
Marking
Type number
HFM101-L
HFM102-L
HFM103-L
HFM104-L
HFM105-L
HFM106-L
HFM107-L
Marking code
H11
H12
H13
H14
H15
H16
H17
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SMA-L
A
0.110 (2.80)
B
0.059 (1.50)
C
0.110 (2.80)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 4
DS-121319
Chip High Effciency Rectifiers
HFM101-L THRU HFM107-L
Packing information
P
0
P
1
d
E
F
B
W
Formosa MS
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SMA-L
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.90
5.50
2.10
1.50
330.00
50.00
178.00
62.00
13.00
1.75
5.50
4.00
4.00
2.00
0.23
12.00
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
E
Page.
7
Page 5
DS-121319
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