HFS7N80
July 2005
BV
DSS
= 800 V
HFS7N80
800V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 1.55 Ω (Typ.) @V
GS
=10V
100% Avalanche Tested
R
DS(on) typ
= 1.55 Ω
I
D
= 7.0 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T
C
=25℃ unless otherwise specified
Parameter
Value
800
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
7.0*
4.4*
28*
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
580
7.0
16.7
5.5
56
0.44
-55 to +150
300
Power Dissipation (T
C
= 25℃)
-
Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
--
--
Max.
2.25
62.5
℃/W
Units
◎
SEMIHOW REV.A0,July 2005
HFS7N80
Electrical Characteristics
T
C
=25
°C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
㎂
V
GS
= 10 V, I
D
= 3.5 A
2.5
--
--
1.55
4.5
1.9
V
Ω
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
㎂
I
D
= 250
㎂, Referenced to25℃
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, T
C
= 125℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
800
--
--
--
--
--
--
0.93
--
--
--
--
--
--
1
10
100
-100
V
V/℃
㎂
㎂
㎁
㎁
ΔBV
DSS
Breakdown Voltage Temperature
Coefficient
/ΔT
J
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1500
120
18
1950
155
24
㎊
㎊
㎊
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
V
DS
= 400 V, I
D
= 7.0 A,
R
G
= 25
Ω
--
--
--
--
--
--
--
40
120
60
70
35
10
13
80
240
120
140
45
--
--
㎱
㎱
㎱
㎱
nC
nC
nC
V
DS
= 640V, I
D
= 7.0 A,
V
GS
= 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 7.0 A, V
GS
= 0 V
I
S
= 7.0 A, V
GS
= 0 V
di
F
/dt = 100 A/μs
(Note 4)
--
--
--
--
--
--
--
--
780
9.0
7.0
28
1.4
--
--
A
V
㎱
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=22.2mH, I
AS
=7.0A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤7.0A, di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
=25
°C
4. Pulse Test : Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎
SEMIHOW REV.A0,July 2005
HFS7N80
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
1
150
o
C
o
25 C
10
0
-55
o
C
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
℃
10
-2
10
-1
10
0
10
1
10
-1
※
Notes :
1. V
DS
= 50V
2. 250μ s Pulse Test
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
4.0
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
3.0
V
GS
= 10V
V
GS
= 20V
2.5
I
DR
, Reverse Drain Current [A]
3.5
10
1
10
0
2.0
150
℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
1.5
※
Note : T
J
= 25
℃
1.0
0
3
6
9
12
15
18
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 160V
C
iss
V
GS
, Gate-Source Voltage [V]
2000
10
V
DS
= 400V
V
DS
= 640V
Capacitance [pF]
8
1500
C
oss
1000
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
4
500
C
rss
2
※
Note : I
D
= 7.0A
0
-1
10
0
10
0
10
1
0
5
10
15
20
25
30
35
40
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎
SEMIHOW REV.A0,July 2005
HFS7N80
Typical Characteristics
1.2
(continued)
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 3.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 μ A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
2
8
Operation in This Area
is Limited by R
DS(on)
10
µs
100
µs
1 ms
10 ms
6
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
10
0
DC
4
10
-1
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0
2
10
-2
10
10
1
10
2
10
3
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Z
θ JC
Thermal Response
(t),
10
0
D=0.5
0.2
0.1
※
Notes :
(t)
W
1. Z
θ JC
= 2.25
℃/
Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ JC
(t)
10
-1
0.05
0.02
0.01
single pulse
P
DM
t
1
-3
10
-2
t
2
10
0
10
-5
10
-4
10
10
-2
10
-1
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎
SEMIHOW REV.A0,July 2005
HFS7N80
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
◎
SEMIHOW REV.A0,July 2005
