HGC is a double-polysilicon trench isolated bipolar process optimised
for RF applications in the range 900 MHz to 2.4 GHz.
Key parameters (minimum geometry device)
NPN
fT
22 GHz at IC=0.4 mA, Vce=3 V
CJC
3.3 fF
CJE
5.4fF
Bvceo
> 4.5V
npn parameters (0.6 x 3.0um emitter)
parameter Condition
Value
fT
Ic=0.7mA Vce=2V 22
HFE
140
Ic=10μA Vce=2V
VAF
63
BVCEO
>4.5
Ic=1μA
BVCBO
>8.0
Ic=1μA
CJE
Vbe=0
10
CJC
Vbc=0
8
CJS
Vcs=0
17
Units
GHz
V
V
V
fF
fF
fF
Applications
•
•
•
•
•
LNAs
Synthesisers
Cellular radios
Wireless LANs
High speed logic
Integrated inductors (optional)
470 MHz lateral pnps
Varactor diodes - 0.5 fF/μm²
Schottky Diodes - V
f
=0.5 V
Polysilicon resistors - 110/155/1400 Ohms/sq
MIM capacitors - 0.65 fF/μm² (optional)
MIS capacitors - 2.75 fF/μm² (optional)
Two level or three level metal option
Key Process Feature
•
•
•
•
•
•
•
•
Lateral pnp parameters (1.8 X 1.8μm emitter)
parameter Condition
Value Units
fT
470
MHz
Ic=40μA Vce=2V
HFE
64
Ic=10μA Vce=2V
VAF
12
V
BVCEO
>5.5
V
Ic=1μA
Npn cross section
Base
Emitter
oxide
P+
base
Collector
P+
epitaxy (n-)
Oxide
DC
BN
Polysilicon Resistor Values
parameter Value
LoP
155
±
20
LoN
110
±
20
HiP
1.4
±
0.2
CS
Units
Ω
Ω
kΩ
CS
Substrate (p-)
fT vs IC min geometry HGC npn
25
20
fT GHz
15
10
5
0
1.00E-06
1.00E-05
1.00E-04
IC (A)
1.00E-03
1.00E-02
Design Rules
Feature
Emitter
HiP resistor
LoP, LoN resistor
Contact
1st Layer metal
2
nd
layer metal
3
rd
layer metal
Min
μm
0.6 X 1.6
1.0
1.2
1.0 X 1.6
1.4
1.4
3.0
Spacing
μm
0.8
0.8
1.4
1.0
1.0
2.0
Data Sheet DS00104 /June 2010
Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty
as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .
While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of
such Information.
All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .
