HL8325G
GaAlAs Laser Diode
Description
The HL8325G is a high-power 0.8
µm
band GaAlAs laser diode with a TQW (triple quantum well) structure. Its
internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
source for optical disk memories, card readers and various other types of optical equipment.
ODE-208-048A (Z)
Rev.1
May 08, 2007
Features
•
Infrared light output:
λp
= 820 to 840 nm
•
High power: standard continuous operation at
40 mW (CW), pulsed operation at 50 mW
•
Built-in monitor photodiode
•
Single longitudinal mode
Package Type
•
HL8325G: G2
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Pulse optical output power
Laser diode reverse voltage
Photo diode reverse voltage
Operating temperature
Symbol
P
O
P
O(pulse)
V
R(LD)
V
R(PD)
Topr
Ratings
40
50 *
2
30
–10 to +60
–40 to +85
Unit
mW
mW
V
V
°C
°C
Storage temperature
Tstg
Note: Pulse condition : Pulse width = 1
µs,
duty = 50%
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Slope efficiency
Beam divergence
parallel to the junction
Beam divergence
parpendicular to the junction
Asitgmatism
Lasing wavelength
Monitor current
Symbol
Ith
ηs
θ//
θ⊥
A
S
λp
I
S
Min
—
0.4
7
18
—
820
20
Typ
40
0.5
10
22
5
830
40
Max
70
0.9
14
32
—
840
130
Unit
mA
mW/mA
°
°
µm
nm
µA
Test Conditions
—
24 (mW) / (I
(32mW)
– I
(8mW)
)
P
O
= 40 mW, FWHM
P
O
= 40 mW, FWHM
P
O
= 4 mW, NA = 0.4
P
O
= 40 mW
P
O
= 4 mW, V
R(PD)
= 5 V
Rev.1 May 08, 2007 page 1 of 4
HL8325G
Typical Characteristic Curves
Optical Output Power vs. Foward Current
50
Optical output power, P
O
(mW)
Threshold Current vs. Case Temperature
100
Threshould current, Ith (mA)
40
30
20
10
0
T
C
= 0°C 25°C
60°C
50
30
20
0
40
80
120
160
200
10
0
10
20
30
40
50
60
Foward current, I
F
(mA)
Case temperature, T
C
(°C)
Slope Efficiency vs. Case Temperature
1.0
Slope efficiency,
ηs
(mW/mA)
Monitor current, I
S
(µA)
Monitor Current vs. Case Temprature
100
P
O
= 4 mW
V
R(PD)
= 5 V
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
Case temperature, T
C
(°C)
80
60
40
20
0
0
10
20
30
40
50
60
Case temperature, T
C
(°C)
Lasing Wavelength vs. Case Temperature
845
Lasing wavelength,
λp
(nm)
P
O
= 40 mW
840
835
Relative intensity
Far Field Pattern
P
O
= 40 mW
T
C
= 25°C
Perpendicular
830
825
Parallel
-40 -30 -20 -10
0
10
20
30
40
820
0
40
50
30
Case temperature, T
C
(°C)
10
Angle,
θ
( ° )
20
60
Rev.1 May 08, 2007 page 2 of 4
HL8325G
Package Dimensions
As of July, 2002
Unit: mm
φ
9.0
+0
–0.025
1.0 ± 0.1
(0.65)
(90˚)
3.5 ± 0.2
0.3
Glass
φ
7.2
+0.3
–0.2
φ
6.2 ± 0.2
(
φ
2.0)
Emitting Point
0.4
+0.1
–0
3 –
φ
0.45 ± 0.1
1
2
3
1
3
2
φ
2.54 ± 0.35
OPJ Code
JEDEC
JEITA
Mass (reference value)
1.5 ± 0.1
9±1
2.45
LD/G2
—
—
1.1 g
Rev.1 May 08, 2007 page 3 of 4
HL8325G
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan
Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese)
Other area (English)
http://www.opnext.com/jp/products/
http://www.opnext.com/products/
©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 2.0
Rev.1 May 08, 2007 page 4 of 4
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