UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high
speed switching inductive circuits, and amplifier
applications.
1
FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability
TO-220
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (PULSE)
Base Current (DC)
Base Current (PULSE)
Total Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
I
CP
I
B
I
BP
Pc
T
J
T
STG
RATINGS
600
400
8
2
4
1
2
35
150
-40 ~ +150
UNIT
V
V
V
A
A
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE (sat) 1
C-E Saturation Voltage
*V
CE (sat) 2
*V
BE (sat) 1
B-E Saturation Voltage
*V
BE (sat) 2
*h
FE1
DC Current Gain
*h
FE2
*h
FE3
Gain-Bandwidth Product
f
T
*Pulse Test : Pulse Width
≤
380µs, Duty Cycle
≤
2%
TEST CONDITIONS
I
C
= 1mA
I
C
= 10mA
I
E
= 1mA
V
CB
= 600V
V
EB
= 9V, I
C
= 0
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.3A, I
B
= 30mA
I
C
= 0.1A, I
B
= 10mA
I
C
= 0.3A, I
B
= 30mA
V
CE
= 5V, I
C
= 0.3A
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 1A
V
CE
= 10V, I
C
= 0.3A, f=1MHz
MIN
600
400
8
TYP MAX UNIT
V
V
V
10
µA
10
µA
0.3
V
0.8
V
0.9
V
1.2
V
40
10
10
6
15
MHz
CLASSIFICATION OF HFE1
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-029,A
www.unisonic.com.tw
UTC HLB124
RANK
Range
NPN EPITAXIAL SILICON TRANSISTOR
B1
10 ~ 17
B2
13 ~ 22
B3
18 ~ 27
B4
23 ~ 32
B5
28 ~ 37
B6
33 ~ 40
CHARACTERISTICS CURVE
Current Gain & Collector Current
100
100000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
125℃
25℃
hFE
10
75℃
10000
100
0
75℃
100
125℃
25℃
V
CE
(sat) @ I
C
= 10I
B
1
1
10
100
h
FE
@ V
CE
= 5V
1000
C
10
1
10
10000
100
1000
C
10000
Collector Current, I
(mA)
Collector Current, I
(mA)
Saturation Voltage & Collector Current
10000
1000
On Voltage & Collector Current
Saturation Voltage (mV)
V
CE
= 5V
75℃
25℃
On Voltage (mV)
100
1
10
100
1000
10000
10000
1000
125℃
V
BE
(sat) @ I
C
= 10I
B
1
10
100
1000
100
Collector Current, I
C
(mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
10
Swithing Time & Collector Current
V
CC
= 100V, I
C
= 5I
B1
= 5I
B2
Switching Time (µs)
Capacitance (Pf)
10
Cob
Ton
1
T
STG
T
f
1
1
10
100
0.1
0.1
1
10
Reverse Biased Voltage (V)
Collector Current (A)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R203-029,A
www.unisonic.com.tw
UTC HLB124
10000
NPN EPITAXIAL SILICON TRANSISTOR
Safe operating Area
Collector Current (mA)
1000
P
T
= 1ms
P
T
= 100ms
P
T
= 1s
100
10
1
1
10
100
1000
Forward Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R203-029,A
www.unisonic.com.tw
综合技术交流
