HM624100HLJP-12,HM624100HLJP-12 pdf中文资料,HM624100HLJP-12引脚图,HM624100HLJP-12电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否Rohs认证

不符合

零件包装代码

SOJ

包装说明

SOJ, SOJ32,.44

针数

Reach Compliance Code

unknow

ECCN代码

3A991.B.2.A

最长访问时间

12 ns

I/O 类型

COMMON

JESD-30 代码

R-PDSO-J32

JESD-609代码

长度

20.71 mm

内存密度

4194304 bi

内存集成电路类型

CACHE SRAM

内存宽度

功能数量

端子数量

字数

1048576 words

字数代码

1000000

工作模式

ASYNCHRONOUS

最高工作温度

70 °C

最低工作温度

组织

1MX4

输出特性

3-STATE

封装主体材料

PLASTIC/EPOXY

封装代码

SOJ

封装等效代码

SOJ32,.44

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE

并行/串行

PARALLEL

电源

5 V

认证状态

Not Qualified

座面最大高度

3.76 mm

最小待机电流

2 V

最大压摆率

0.18 mA

最大供电电压 (Vsup)

5.5 V

最小供电电压 (Vsup)

4.5 V

标称供电电压 (Vsup)

5 V

表面贴装

YES

技术

CMOS

温度等级

COMMERCIAL

端子面层

Tin/Lead (Sn/Pb)

端子形式

J BEND

端子节距

1.27 mm

端子位置

DUAL

宽度

10.16 mm

Base Number Matches

文档预览

HM624100H Series

4M High Speed SRAM (1-Mword

4-bit)

ADE-203-789D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword

4-bit. It has realized high speed

access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed and high density

memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ

for high density surface mounting.

Features

•

Single 5.0 V supply : 5.0 V

10 %

•

Access time 10/12/15 ns (max)

•

Completely static memory



No clock or timing strobe required

•

Equal access and cycle times

•

Directly TTL compatible



All inputs and outputs

•

Operating current : 200/180/160 mA (max)

•

TTL standby current : 70/60/50 mA (max)

•

CMOS standby ccurrent : 5 mA (max)

: 1.2 mA (max) (L-version)

•

Data retension current : 0.8 mA (max) (L-version)

•

Data retension voltage : 2.0 V (min) (L-version)

•

Center V

and V

type pinout

HM624100H Series

Ordering Information

Type No.

HM624100HJP-10

HM624100HJP-12

HM624100HJP-15

HM624100HLJP-10

HM624100HLJP-12

HM624100HLJP-15

Access time

10 ns

12 ns

15 ns

10 ns

12 ns

15 ns

Package

400-mil 32-pin plastic SOJ (CP-32DB)

Pin Arrangement

HM624100HJP/HLJP Series

I/O1

I/O2

(Top view)

A19

A18

A17

A16

A15

I/O4

I/O3

A14

A13

A12

A11

A10

HM624100H Series

Pin Description

Pin name

A0 to A19

I/O1 to I/O4

Function

Address input

Data input/output

Chip select

Output enable

Write enable

Power supply

Ground

No connection

Block Diagram

(LSB)

A17

A11

A16

(MSB)

Internal

voltage

generater

Row

decoder

Memory matrix

256 rows

16 columns

256 blocks

4 bit

(4,194,304 bits)

I/O1

I/O4

Column I/O

Input

data

control

Column decoder

A10 A8 A9 A19 A12 A13 A14 A0 A18 A15 A3 A4

(LSB)

(MSB)

HM624100H Series

Operation Table

Note:

×:

H or L

Mode

Standby

Output disable

Read

Write

current

, I

SB1

I/O

High-Z

Dout

Din

Ref. cycle

—

Read cycle (1) to (3)

Write cycle (1)

Write cycle (2)

Absolute Maximum Ratings

Parameter

Supply voltage relative to V

Voltage on any pin relative to V

Power dissipation

Operating temperature

Storage temperature

Storage temperature under bias

Symbol

Topr

Tstg

Tbias

Value

–0.5 to +7.0

–0.5*

to V

+0.5*

1.0

0 to +70

–55 to +125

–10 to +85

Unit

°C

Notes: 1. V

(min) = –2.0 V for pulse width (under shoot)

≤

8 ns

2. V

(max) = V

+ 2.0 V for pulse width (over shoot)

≤

8 ns

Recommended DC Operating Conditions

(Ta = 0 to +70°C)

Parameter

Supply voltage

Symbol

Input voltage

Notes: 1.

Min

4.5

2.2

–0.5*

Typ

5.0

—

Max

5.5

+ 0.5*

0.8

Unit

(min) = –2.0 V for pulse width (under shoot)

≤

8 ns

(max) = V

+ 2.0 V for pulse width (over shoot)

≤

8 ns

The supply voltage with all V

pins must be on the same level.

The supply voltage with all V

pins must be on the same level.

HM624100H Series

DC Characteristics

(Ta = 0 to +70°C, V

= 5.0 V

10 %, V

= 0V)

Parameter

Input leakage current

Output leakage current

Operation power

supply current

Symbol Min

10 ns cycle I

—

Typ*

—

Max

200

Unit

µA

Test conditions

Vin = V

to V

Vin = V

to V

Min cycle

= V

, lout = 0 mA

Other inputs = V

12 ns cycle I

15 ns cycle I

Standby power supply

current

10 ns cycle I

12 ns cycle I

15 ns cycle I

SB1

—

0.1

180

160

f = 0 MHz

≥

- 0.2 V,

(1) 0 V

≤

Vin

≤

0.2 V or

(2) V

≥

Vin

≥

- 0.2 V

Min cycle,

= V

Other inputs = V

—*

Output voltage

—

2.4

0.1*

—

1.2*

0.4

—

= 8 mA

= –4 mA

Notes: 1. Typical values are at V

= 5.0 V, Ta = +25°C and not guaranteed.

2. This characteristics is guaranteed only for L-version.

Capacitance

(Ta = +25°C, f = 1.0 MHz)

Parameter

Input capacitance*

Input/output capacitance*

Note:

Symbol

Cin

I/O

Min

—

Typ

—

Max

Unit

Test conditions

Vin = 0 V

I/O

= 0 V

1. This parameter is sampled and not 100% tested.

参数对比

与HM624100HLJP-12相近的元器件有：HM624100H、HM624100HJP-15、HM624100HLJP-10、HM624100HJP-10、HM624100HJP-12、HM624100HLJP-15。描述及对比如下：

型号	HM624100HLJP-12	HM624100H	HM624100HJP-15	HM624100HLJP-10	HM624100HJP-10	HM624100HJP-12	HM624100HLJP-15
描述	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)	4M High Speed SRAM (1-Mword x 4-bit)
零件包装代码	SOJ	-	SOJ	SOJ	SOJ	SOJ	SOJ
包装说明	SOJ, SOJ32,.44	-	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44	SOJ, SOJ32,.44
针数	32	-	32	32	32	32	32
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow
最长访问时间	12 ns	-	15 ns	10 ns	10 ns	12 ns	15 ns
I/O 类型	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-J32	-	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32	R-PDSO-J32
长度	20.71 mm	-	20.71 mm	20.71 mm	20.71 mm	20.71 mm	20.71 mm
内存密度	4194304 bi	-	4194304 bi	4194304 bi	4194304 bi	4194304 bi	4194304 bi
内存集成电路类型	CACHE SRAM	-	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	4	-	4	4	4	4	4
功能数量	1	-	1	1	1	1	1
端子数量	32	-	32	32	32	32	32
字数	1048576 words	-	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	-	1000000	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C
组织	1MX4	-	1MX4	1MX4	1MX4	1MX4	1MX4
输出特性	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOJ	-	SOJ	SOJ	SOJ	SOJ	SOJ
封装等效代码	SOJ32,.44	-	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44	SOJ32,.44
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	-	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.76 mm	-	3.76 mm	3.76 mm	3.76 mm	3.76 mm	3.76 mm
最小待机电流	2 V	-	4.5 V	2 V	4.5 V	4.5 V	2 V
最大压摆率	0.18 mA	-	0.16 mA	0.2 mA	0.2 mA	0.18 mA	0.16 mA
最大供电电压 (Vsup)	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	-	YES	YES	YES	YES	YES
技术	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	J BEND	-	J BEND	J BEND	J BEND	J BEND	J BEND
端子节距	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	-	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm