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HMC313

HMC313

器件类别:无线/射频/通信    射频和微波   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

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器件参数
参数名称
属性值
Brand Name
Analog Devices Inc
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
ADI(亚德诺半导体)
包装说明
SOT-26, 6 PIN
针数
6
制造商包装代码
RJ-6
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
特性阻抗
50 Ω
构造
COMPONENT
增益
14 dB
最大输入功率 (CW)
20 dBm
JESD-609代码
e0
最大工作频率
6000 MHz
最小工作频率
最高工作温度
85 °C
最低工作温度
-40 °C
射频/微波设备类型
WIDE BAND LOW POWER
端子面层
Tin/Lead (Sn/Pb)
参考设计
展开全部 ↓
文档预览
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Features
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit
Typical Applications
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Ideal as a Driver & Amplifier for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5 - 6 GHz UNII & HiperLAN
Functional Diagram
General Description
The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single Vcc supply.
The surface mount SOT26 amplifier can be used
as a broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313(E) offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current.
Electrical Specifi cations,
T
A
= +25 °C, Vcc = +5.0V
Vcc = +5V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
Note: Data taken with broadband bias tee on device output.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Units
Typ.
DC - 6
14
17
0.02
7
6
30
11
14
15
24
27
6.5
50
20
0.03
Max.
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
9 - 26
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC313* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
DESIGN RESOURCES
HMC313 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
EVALUATION KITS
HMC313 Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Data Sheet
HMC313 Data Sheet
DISCUSSIONS
View all HMC313 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
TOOLS AND SIMULATIONS
HMC313 S-Parameters
REFERENCE MATERIALS
Quality Documentation
HMC Legacy PCN: SOT26 and SOT26E packages -
Relocation of pre-existing production equipment to new
building
Package/Assembly Qualification Test Report: Plastic
Encapsulated SOT26 (QTR: 02017 REV: 01)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not
trigger a change to either the revision number or the content of the product data sheet. This dynamic page may be frequently modified.
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Gain vs. Temperature
25
Gain & Return Loss
25
9
+ 25 C
+ 85 C
- 40 C
16
RESPONSE (dB)
20
7
GAIN (dB)
S11
S21
S22
15
-2
10
-11
5
-20
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Input & Output Return Loss
0
Reverse Isolation
0
-10
RETURN LOSS (dB)
-5
ISOLATION (dB)
-20
-10
-30
-15
S11
S22
-40
-20
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
-50
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
P1dB vs. Temperature
25
+ 25 C
+ 85 C
- 40 C
Psat vs. Temperature
25
+ 25 C
+ 85 C
- 40 C
20
P1dB (dBm)
20
PSAT (dBm)
15
15
10
10
5
5
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
9 - 27
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Output IP3 vs. Temperature
Power Compression @ 1 GHz
20
Pout (dBm), Gain (dB), PAE (%)
15
10
5
0
-5
Pout (dBm)
Gain (dB)
PAE (%)
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
IP3 (dBm)
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
+ 25 C
+ 85 C
- 40 C
-10
-22 -20 -18 -16 -14 -12 -10 -8 -6 -4
INPUT POWER (dBm)
-2
0
2
4
Power Compression @ 3 GHz
20
Pout (dBm), Gain (dB), PAE (%)
15
10
5
0
-5
-10
-22
Pout (dBm)
Gain (dB)
PAE (%)
-18
-14
-10
-6
INPUT POWER (dBm)
-2
2
9 - 28
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85
°C)
(derate 3.99 mW/°C above 85
°C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+20 dBm
150 °C
0.259 W
251 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 29
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
Package Information
Part Number
HMC313
HMC313E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H313
XXXX
313E
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
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