v02.0802
HMC314
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Features
P1dB Output Power: +18 dBm
Output IP3: +29 dBm
Gain: 12 dB
Single Supply: 5V
Ultra Small Package: SOT26
8
AMPLIFIERS - SMT
Typical Applications
Ideal Broadband Gain Stage for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• Low Profile Portable Wireless Devices
• WLAN Systems
Functional Diagram
General Description
The HMC314 is a GaAs InGaP Heterojunction Bipo-
lar Transistor (HBT) MMIC amplifier that operates
from a single positive supply. This amplifier also
incorporates a power down feature. When the “Vpd”
pin is held low, the amplifier will shut down. The
surface mount SOT26 amplifier can be used as a
broadband gain stage for wideband applications.
The amplifier provides 12 dB of gain and +22 dBm
of saturated power while operating from a single
positive +5v supply. The HMC314 is packaged in
an ultra small SOT26 package at a height of only
1.45mm.
Electrical Specifications,
T
A
= +25° C
Vs = +5V, Rbias = 10 Ohm
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Switching Speed
Supply Current (Icc)
Control Voltage (Vpd)
Control Current (Ipd)
On/Off
6
2
22
15
19
26
7
Typ.
0.7 - 4.0
12
0.015
12
6
30
18
22
29
60
150
0/5
.001/12
16
0.025
Max.
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
ns
mA
Volts
mA
Units
8 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v02.0802
HMC314
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Gain & Return Loss
20
15
10
S11
S21
S22
Gain vs. Temperature
20
+ 25 C
+ 65 C
- 40 C
8
AMPLIFIERS - SMT
15
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
0
0.5
5
GAIN (dB)
10
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+ 25 C
+ 65 C
- 40 C
Output Return Loss vs. Temperature
0
-5
-4
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-8
-15
-12
+ 25 C
+ 65 C
- 40 C
-20
-16
-25
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-20
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
+ 25 C
+ 65 C
- 40 C
-10
ISOLATION (dB)
-20
-30
-40
-50
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 75
v02.0802
HMC314
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
25
Psat vs. Temperature
25
20
20
P1dB (dBm)
15
Psat (dBm)
+ 25 C
+ 65 C
- 40 C
15
10
10
+ 25 C
+ 65 C
- 40 C
5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression @ 1 GHz
25
Power Compression @ 3 GHz
25
Pout (dBm), Gain (dB), PAE (%)
20
15
10
5
0
-5
-8
-6
-4
Pout (dBm), Gain (dB), PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
20
15
10
5
0
-5
Pout (dBm)
Gain (dB)
PAE (%)
-2
0
2
4
6
8
INPUT POWER (dBm)
10
12
14
16
-8
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
10
12
14
16
Output IP3 vs. Temperature
40
35
30
IP3 (dBm)
25
20
15
10
5
0
0.5
+ 25 C
+ 65 C
- 40 C
1
1.5
2
2.5
3
3.5
4
4.5
5
FREQUENCY (GHz)
8 - 76
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v02.0802
HMC314
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage Range (Vpd)
RF Input Power (RFin)(Vs = +5.0 Vdc)
Junction Temperature
Continuous Pdiss (T = 65
°C)
(derate 6.57 mW/°C above 65
°C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+5.0 Vdc
-0.2 to 3.5 Vdc
+20 dBm
150 °C
0.558 W
Truth Table
Vs
5V
5V
Vctl
5V
0V
Is
150 mA
<1 µA
Ictl
12 mA
<1 µA
State
On
Power Down
8
AMPLIFIERS - SMT
152 °C/W
-65 to +150 °C
-40 to +65 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 77
v02.0802
HMC314
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
8
AMPLIFIERS - SMT
Application Circuit
Note:
1. Requires a 10 Ohm resistor (Rbias) in series with the Vcc line and a 160 Ohm resistor in series with the Vpd line.
2. Requires Blocking Capacitors on Pins 1 & 3.
3. Requires bypass capacitors on Vcc and Vpd line as shown.
8 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
