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HMC326MS8GTR

IC RF AMP 3GHZ-4.5GHZ 8MSOP

器件类别:热门应用    无线/射频/通信   

厂商名称:ADI(亚德诺半导体)

厂商官网:https://www.analog.com

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器件:HMC326MS8GTR

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器件参数
参数名称
属性值
频率
3GHz ~ 4.5GHz
P1dB
23.5dBm
增益
21dB
噪声系数
5dB
电压 - 电源
5V
电流 - 电源
130mA
测试频率
3GHz
封装/外壳
8-TSSOP,8-MSOP(0.118",3.00mm 宽)裸露焊盘
供应商器件封装
8-MSOPG
文档预览
HMC326MS8G / 326MS8GE
v10.1017
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Typical Applications
The HMC326MS8G / HMC326MS8GE is ideal for:
Features
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5V
Ultra Small Package: MSOP8G
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifier
Functional Diagram
General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver amplifiers which
operate between 3.0 and 4.5 GHz. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplifier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplifier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE.
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icc)
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
tOn/tOff
Vpd = 0V
Vpd = 5V
110
32
21
18
Min.
Typ.
3.0 - 4.5
21
0.025
12
7
23.5
26
36
5
1
130
7
10
160
0.035
Max.
Units
GHz
dB
dB /
°C
dB
dB
dBm
dBm
dBm
dB
uA
mA
mA
ns
1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC326MS8G / 326MS8GE
v10.1017
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
2
2.5
3
3.5
4
4.5
5
5.5
6
FREQUENCY (GHz)
15
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
17
+25C
+85C
-40C
Gain vs. Temperature
25
23
S21
S11
S22
21
19
P1dB vs. Temperature
30
Psat vs. Temperature
30
28
OUTPUT P1dB (dBm)
Psat (dBm)
+25C
+85C
-40C
28
26
26
24
24
+25C
+85C
-40C
22
22
20
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
20
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
Power Compression @ 3.5 GHz
45
Pout (dBm), Gain (dB), PAE (%)
40
35
30
25
20
15
10
5
0
Output Power (dBm)
Gain (dB)
PAE (%)
38
IP3 (dBm)
36
34
+25C
+85C
-40C
32
30
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
2
GAIN (dB)
HMC326MS8G / 326MS8GE
v10.1017
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25C
+85C
-40C
-3
-6
-10
-9
+25C
+85C
-40C
-15
-12
-20
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
-15
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-10
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
+25C
+85C
-40C
-20
-30
-40
-50
-60
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
+25C
+85C
-40C
0
3
3.25
3.5
3.75
4
4.25
4.5
FREQUENCY (GHz)
Gain, Power & Quiescent Supply
Current vs. Vpd @3.5 GHz
27
150
Additive Phase Noise Vs Offset Frequency,
RF Frequency = 4 GHz,
RF Input Power = 10 dBm (Psat)
-90
-100
GAIN (dB), P1dB (dBm), Psat (dBm)
P1dB
PHASE NOISE (dBc/Hz)
24
PSAT
120
-110
-120
-130
-140
-150
-160
-170
-180
21
90
Icc (mA)
18
GAIN
60
15
Icc
30
12
1.5
2
2.5
3
3.5
Vpd (Vdc)
4
4.5
5
0
-190
100
1K
10K
100K
1M
10M
OFFSET FREQUENCY (Hz)
3
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC326MS8G / 326MS8GE
v10.1017
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage Range (Vpd)
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+15 dBm
150 °C
0.916 W
71 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
(RH-8-4)
Dimensions shown in millimeters
3.10
3.00
2.90
8
5
2.41
MAX
5.08
4.90
4.68
3.10
3.00
2.90
EXPOSED
PAD
1.78
MAX
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
0.22
0.08
0.95
REF
01-13-2017-A
1
4
0.65
BSC
0.95
0.85
0.75
0.13
MAX
COPLANARITY
0.10
PKG-004854
TOP VIEW
BOTTOM VIEW
1.95 BSC
SIDE VIEW
1.10
MAX
0.38
0.30
0.22
0.25 GAGE
PLANE
END VIEW
0.80
0.60
0.40
COMPLIANT TO JEDEC STANDARDS MO-187-AA-T
8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
(RH-8-4)
Dimensions shown in millimeters.
Package Information
Part Number
HMC326MS8G
HMC326MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H326
XXXX
H326
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
4
+5.5 Vdc
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC326MS8G / 326MS8GE
v10.1017
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Evaluation PCB
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
List of Materials for Evaluation PCB 104356
Item
J1 - J2
J3
C1 - C2
C3
C4
C5
L1
U1
PCB
[2]
Description
PCB Mount SMA RF Connector
2mm DC Header
330 pF Capacitor, 0603 Pkg.
0.7 pF Capacitor, 0603 Pkg.
3.0 pF Capacitor, 0402 Pkg.
2.2 µF Capacitor, Tantalum
3.3 nH Inductor, 0805 Pkg.
HMC326MS8G / HMC326MS8GE
Amplifier
104106 Eval Board
[1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Analog Devices
upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, 10 mil thick, tr = 3.48
5
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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参数对比
与HMC326MS8GTR相近的元器件有:104356-HMC326MS8G。描述及对比如下:
型号 HMC326MS8GTR 104356-HMC326MS8G
描述 IC RF AMP 3GHZ-4.5GHZ 8MSOP EVAL BOARD HMC326MS8GE
频率 3GHz ~ 4.5GHz 3GHz ~ 4.5GHz
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