HMC490
v02.0907
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
The HMC490 is ideal for use as either a LNA or driver
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Features
Noise Figure: 2 dB
Output P1dB: +26 dBm
Gain: 27 dB
Output IP3: +35 dBm
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.78 x 1.46 x 0.1 mm
Functional Diagram
General Description
The HMC490 is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier which operates
between 12 and 17 GHz. The HMC490 provides
27 dB of gain, 2 dB noise figure and an output IP3
of 35 dBm from a +5V supply voltage. The amplifier
chip can easily be integrated into Multi-Chip-Modules
(MCMs) due to its small size. All data is tested with
the chip in a 50 Ohm test fixture connected via
0.025mm (1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd = 5V, Idd = 200 mA*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
22
24
Min.
Typ.
12 - 14
26.5
0.03
2.5
8
8
25
27
32
200
250
23
0.04
24
Max.
Min.
Typ.
14 - 17
27
0.03
2.0
12
9
26
28
35
200
250
0.04
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
* Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical.
1 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC490
v02.0907
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
Broadband Gain & Return Loss
30
Gain vs. Temperature
32
30
28
26
1
LOW NOISE AMPLIFIERS - CHIP
1 - 49
20
RESPONSE (dB)
GAIN (dB)
S21
S11
S22
10
24
22
20
18
16
14
12
10
+25 C
+85 C
-55 C
0
-10
-20
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25 C
+85 C
-55 C
Output Return Loss vs. Temperature
0
-2
RETURN LOSS (dB)
-4
-6
-8
-10
-12
+25 C
+85 C
-55 C
-4
RETURN LOSS (dB)
-8
-12
-16
-20
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
-14
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
Output IP3 vs. Temperature
40
35
30
IP3 (dBm)
25
20
+25 C
+85 C
-55 C
8
NOISE FIGURE (dB)
+25 C
+85 C
-55 C
6
4
2
15
10
10
11
12
13
14
15
16
17
18
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
FREQUENCY (GHz)
0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC490
v02.0907
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
1
LOW NOISE AMPLIFIERS - CHIP
P1dB vs. Temperature
32
28
24
P1dB (dBm)
Psat vs. Temperature
32
28
24
Psat (dBm)
20
16
12
8
4
0
+25 C
+85 C
-55 C
20
16
12
8
4
0
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
Gain & Noise Figure vs.
Supply Voltage@ 14 GHz, Idd= 200 mA
30
5
Power Compression @ 14 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-20
Pout (dBm)
Gain (dB)
PAE (%)
28
4
NOISE FIGURE (dB)
GAIN (dB)
26
3
24
2
22
1
20
3
3.5
4
4.5
Vdd (V)
5
0
5.5
-16
-12
-8
-4
0
4
8
INPUT POWER (dBm)
Reverse Isolation vs. Temperature
0
-10
Gain, Noise Figure & Output IP3 vs.
Supply Current @ 14 GHz, Vdd= 5V*
34
5
30
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
14
100
GAIN (dB), IP3 (dBm)
+25 C
+85 C
-55 C
4
NOISE FIGURE (dB)
26
3
22
2
18
Gain
IP3
Noise Figure
1
125
150
Idd (mA)
175
0
200
* Idd is controlled by varying Vgg
1 - 50
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC490
v02.0907
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg1, Vgg2, Vgg3)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-4 to 0 Vdc
+10 dBm
175 °C
2.65 W
34 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
+3.0
+3.5
+4.0
Idd (mA)
191
200
208
189
200
208
1
LOW NOISE AMPLIFIERS - CHIP
1 - 51
Note: Amplifi er will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 200 mA at +5.0V and
+3.5V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-2 (Gel Pack)
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC490
v02.0907
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
Function
Description
Gate control for amplifier. Adjust to achieve Id of 200 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and 0.01
μF are required.
This pad is AC coupled
and matched to 50 Ohms.
Interface Schematic
1,8, 7
Vgg1, 2, 3
2
RFIN
3, 4, 5
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass capacitors
of 100 pF and 0.01 μF are required.
6
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die Bottom must be connected to RF/DC ground.
Die Bottom
GND
Assembly Diagram
1 - 52
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Microchip MCU
