HANBit
HMF4M32M8G
FLASH-ROM MODULE 16MByte (4M x 32Bit), 72-Pin SIMM, 5V
Part No. HMF4M32M8G
GENERAL DESCRIPTION
The HMF4M32M8G is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a
x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double-sided, FR4-printed circuit
board. Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, CE_LL2) are use d to
enable the module’s 4 bytes independently. Outputs enable (/OE) and write enable (/WE) can set the memory input and
output.When FROM module is disable condition the module is becoming power standby mode, system designer can get low -
power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are
TTL-compatible.
FEATURES
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Part Identifications
HMF4M32M8G : 16Mbyte, 72-pin SIMM, Gold
HMF4M32M8 : 16Mbyte, 72-pin SIMM, Solder
wAccess
time : 75, 90 and 120ns
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High-density 16MByte design
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High-reliability, low-power design
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Single + 5V
±
0.5V power supply
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Easy memory expansion
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All inputs and outputs are TTL-compatible
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FR4-PCB design
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Low profile 72-pin SIMM
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Minimum 1,000,000 write/erase cycle
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Sectors erase architecture
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Sector group protection
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Temporary sector group unprotection
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The used device is Am29F016B or MBM29F016-90PFTN
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
-75
-90
-120
22
23
24
120ns access
w
Packages
PIN ASSIGNMENT
SYMBOL
Vss
A3
A2
A1
A0
Vcc
A11
/OE
A10
/RESET
/CE-LL2
/CE-LL1
DQ7
DQ0
DQ1
DQ2
DQ6
DQ5
DQ4
DQ3
/WE
A17
A14
A13
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
A20
DQ8
DQ9
DQ10
/CE-LM2
Vcc
/CE-LM1
DQ15
DQ14
DQ13
DQ12
DQ11
A18
A16
Vss
A6
/RY_BY
A5
A4
Vcc
/CE-UM2
/CE-UM1
DQ23
DQ16
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
DQ17
DQ18
DQ22
DQ21
DQ20
DQ19
A19
A15
A12
A7
Vcc
A8
A9
DQ24
DQ25
DQ26
/CE-UU2
/CE-UU1
DQ31
DQ30
DQ29
DQ28
DQ27
Vss
OPTIONS
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Timing
75ns access
90ns access
MARKING
72-PIN SIMM
72-pin SIMM
M
TOP VIEW
URL: www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
Functional Block Diagram
DQ 0-DQ31
A0-A20
DQ32
A21
HMF4M32M8G
A0-20
DQ0-7
/WE
/OE
/CE
/CE-LL1
A0-20
DQ8-15
/WE
/OE
/CE-LM1
A0-20
/WE
/OE
/CE-UM1
/CE
DQ16-23
/CE
/CE-LM2
/CE-LL2
A0-20
/WE
/OE
/CE
DQ0-7
U1
U5
A0-20
/WE
/OE
/CE
DQ8-15
U2
U6
A0-20
/WE
/OE
/CE-UM2
DQ 16-23
U3
U7
/CE
A0-20
/WE
/OE
/WE
/OE
/CE
/CE-UU1
/CE-UU2
DQ24-31
/WE
/OE
A0-20
/WE
/OE
/CE
DQ 24-31
U4
U8
URL: www.hbe.co.kr
REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
D
HMF4M32M8G
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
RATING
-2.0V to +7.0V
-2.0V to +7.0V
-65oC to +125oC
Operating Temperature
T
A
-55oC to +125 oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the devic e.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extende d
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
Vcc
V
SS
MIN
4.5V
0
0
TYP.
MAX
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
/CE = V
IL
, /OE=V
IH
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc ma x
URL: www.hbe.co.kr
REV.02(August,2002)
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
I
OH
= -2.5mA, Vcc = Vcc min
I
OL
= 12mA, Vcc =Vcc min
/CE = V
IL
, /OE=V
IH
,
SYMBOL
I
L1
I
L0
V
OH
V
OL
I
CC1
I
CC2
I
CC3
V
LKO
MIN
MAX
±1.0
±1.0
UNITS
µA
µA
V
2.4
0.45
40
60
1.0
3.2
4.2
V
mA
mA
mA
V
/CE= V
IH
3
HANBit Electronics Co., Ltd.
HANBit
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
-
TYP.
1
MAX.
UNIT
HMF4M32M8G
COMMENTS
Excludes 00H programming
8
sec
prior to erasure
Excludes system-level
overhead
Excludes system-level
Byte Programming Time
-
7
300
µs
Chip Programming Time
-
14.4
43.2
sec
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
6
8.5
7.5
7.5
12
9
pF
pF
pF
MIN
MAX
UNIT
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC
t
AVAV
t
AVQV
STANDARD
t
RC
t
ACC
Address to Output Delay
/OE = V
IL
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
CE
t
OE
t
DF
t
DF
t
QH
/CE or /OE, Whichever Occurs First
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
Min
0
0
ns
/OE = V
IL
Max
Max
Max
Max
70
40
20
20
90
40
20
20
ns
ns
ns
ns
Read Cycle Time
/CE = V
IL
Max
70
90
ns
Min
70
90
ns
DESCRIPTION
TEST SETUP
-75
-90
UNIT
TEST SPECIFICATIONS
TEST CONDITION
Output load
ALL SPEED OPTIONS
1TTL gate
UNIT
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REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
Output load capacitance,
100
C
L
(Including jig capacitance)
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
20
0.45-2.4
0.8
2.0
HMF4M32M8G
pF
ns
V
V
V
5.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETER
SYMBOLS
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
70
0
40
40
0
0
0
0
0
40
20
7
1
90
0
45
45
0
0
0
0
0
45
20
7
1
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
DESCRIPTION
-75
-90
UNIT
URL: www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
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