Agilent HMPP-386x Series
MiniPak Surface Mount
RF PIN Diodes
Data Sheet
Features
• Surface mount MiniPak package
– low height, 0.7 mm (0.028") max.
– small footprint, 1.75 mm
2
(0.0028 inch
2
)
• Better thermal conductivity for
higher power dissipation
Description/Applications
These ultra-miniature products
represent the blending of Agilent
Technologies’ proven semicon-
ductor and the latest in leadless
packaging technology.
The HMPP-386x series of general
purpose PIN diodes are designed
for two classes of applications.
The first is attenuators where
current consumption is the most
important design consideration.
The second application for this
series of diodes is in switches
where low capacitance with no
reverse bias is the driving issue
for the designer.
The low dielectric relaxation
frequency of the HMPP-386x
insures that low capacitance can
be reached at zero volts reverse
bias at frequencies above 1 GHz,
making this PIN diode ideal for
hand held applications.
Low junction capacitance of the
PIN diode chip, combined with
ultra low package parasitics,
mean that these products may be
used at frequencies which are
higher than the upper limit for
conventional PIN diodes.
Note that Agilent’s manufactur-
ing techniques assure that dice
packaged in pairs are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
• Single and dual versions
• Matched diodes for consistent
performance
• Low capacitance at zero volts
• Low resistance
• Low FIT (Failure in Time) rate*
• Six-sigma quality level
* For more information, see the Surface Mount
Schottky Reliability Data Sheet.
Pin Connections and
Package Marking
3
4
AA
2
1
Product code
Date code
Package Lead Code Identification
(Top View)
Single
3
4
3
Anti-parallel
4
3
Parallel
4
Notes:
1. Package marking provides orientation and
identification.
2. See “Electrical Specifications” for appropriate
package marking.
2
#0
1
2
#2
1
2
#5
1
HMPP-386x Series Absolute Maximum Ratings
[1]
,
T
C
= 25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1
µs
pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Units
Amp
V
°C
°C
°C/W
Value
1
100
150
-65 to +150
150
ESD WARNING:
Handling Precautions Should Be
Taken To Avoid Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made
to the circuit board.
Electrical Specifications,
T
C
= +25°C, each diode
Part Number
HMPP-
3860
3862
3865
Test Conditions
Package
Marking Code
H
F
E
Lead Code
0
2
5
Configuration
Single
Anti-parallel
Parallel
Minimum Breakdown
Voltage (V)
50
Typical Series
Resistance (Ω)
3.0/1.5*
V
R
= V
BR
Measure
I
R
≤
10
µA
I
F
= 10 mA
f = 100 MHz
*I
F
= 100 mA
Typical Parameters,
T
C
= +25°C
Part Number
HMPP-
3860
3862
3865
Test Conditions
Total Resistance
R
T
(Ω)
22
Carrier Lifetime
τ
(ns)
500
Reverse Recovery Time
T
rr
(ns)
80
Total Capacitance
C
T
(pF)
0.20
I
F
= 1 mA
f = 100 MHz
I
F
= 50 mA
T
R
= 250 mA
V
R
= 10 V
I
F
= 20 mA
90% Recovery
V
R
= 50 V
f = 1 MHz
2
HMPP-386x Series Typical Performance,
T
c
= 25°C, each diode
0.35
1000
INPUT INTERCEPT POINT (dBm)
T
A
= +85°C
T
A
= +25°C
T
A
= –55°C
120
TOTAL CAPACITANCE (pF)
RESISTANCE (OHMS)
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
100
Diode Mounted as a
Series Switch in a
115
50
Ω
Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
Intercept point
will be higher
at higher
frequencies
10
0.15
0
2
4
6
8
10 12 14 16 18 20
1
0.01
0.1
1
10
100
1
10
I
F
– FORWARD BIAS CURRENT (mA)
30
REVERSE VOLTAGE (V)
BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse Bias.
Figure 2. Typical RF Resistance vs. Forward
Bias Current.
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current for Switch Diodes.
1000
100
T
rr
– REVERSE RECOVERY TIME (ns)
I
F
– FORWARD CURRENT (mA)
10
V
R
= 5 V
100
V
R
= 10 V
V
R
= 20 V
1
0.1
125°C
25°C
0.6
–50°C
0.8
1.0
1.2
10
10
20
FORWARD CURRENT (mA)
30
0.01
0
0.2
0.4
V
F
– FORWARD VOLTAGE (mA)
Figure 4. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
Figure 5. Forward Current vs. Forward
Voltage.
Typical Applications
RF COMMON
RF COMMON
2
1
RF 1
3
4
RF 2
RF 1
2
1
2
1
3
4
3
4
RF 2
BIAS 1
BIAS 2
BIAS
Figure 6. Simple SPDT Switch Using Only Positive Bias.
Figure 7. High Isolation SPDT Switch Using Dual Bias.
3
RF COMMON
VARIABLE BIAS
3
4
1
2
4
3
RF 1
4
1
3
1
2
3
4
1
RF 2
INPUT
2
1
4
3
RF IN/OUT
2
2
FIXED
BIAS
VOLTAGE
BIAS
Figure 9. Four Diode
π
Attenuator. See AN1048 for details.
Figure 8. Very High Isolation SPDT Switch, Dual Bias.
BIAS
3
4
3
4
2
1
2
1
Figure 10. High Isolation SPST Switch (Repeat Cells as Required).
Diode Lifetime and Resistance
The resistance of a PIN diode is
controlled by the conductivity (or
resistivity) of the I layer. This
conductivity is controlled by the
density of the cloud of carriers
(charges) in the I layer (which is,
in turn, controlled by the DC
bias). Minority carrier lifetime,
indicated by the Greek symbol
τ,
is a measure of the time it takes
for the charge stored in the I
layer to decay, when forward bias
is replaced with reverse bias, to
some predetermined value. This
lifetime can be short (35 to
200 nsec. for epitaxial diodes) or
it can be relatively long (400 to
3000 nsec. for bulk diodes).
Lifetime has a strong influence
over a number of PIN diode
parameters, among which are
distortion and basic diode
behavior.
To study the effect of lifetime on
diode behavior, we first define a
cutoff frequency f
C
= 1/τ. For
short lifetime diodes, this cutoff
frequency can be as high as
30 MHz while for our longer
lifetime diodes f
C
≅
400 KHz. At
frequencies which are ten times
f
C
(or more), a PIN diode does
indeed act like a current con-
trolled variable resistor. At
frequencies which are one tenth
(or less) of f
C
, a PIN diode acts
like an ordinary PN junction
diode. Finally, at 0.1f
C
≤
f
≤
10f
C
,
the behavior of the diode is very
complex. Suffice it to mention
that in this frequency range, the
diode can exhibit very strong
capacitive or inductive reac-
tance — it will not behave at all
like a resistor.
The HMPP-386x family features a
typical lifetime of 300 to 500 ns,
so 10f
C
for this part is 5 MHz. At
any frequency over 5 MHz, the
resistance of this diode will
follow the curve given in Figure
2. From this curve, it can be seen
that the HMPP-386x family
produces a lower resistance at a
given value of bias current than
most attenuator PIN diodes,
making it ideal for applications
where current consumption is
important.
4
Dielectric Relaxation Frequency and
Diode Capacitance
f
DR
(Dielectric Relaxation
Frequency) for a PIN diode is
given by the equation
f
DR
= 1
2πρε
where…
ρ
= bulk resistivity of the I-layer
ε
=
ε
0
ε
R
= 10
-12
F/cm
= bulk susceptance of silicon
In the case of an epitaxial diode
with a value for
ρ
of 10Ω-cm, f
DR
will be in Ku-Band. For a bulk
diode fabricated on very pure
material,
ρ
can be as high as
2000, resulting in a value of f
DR
of 80 MHz.
The implications of a low f
DR
are
very important in RF attenuator
and switch circuits. At operating
frequencies below f
DR
, reverse
bias (as much as 50V) is needed
to minimize junction capacitance.
At operating frequencies well
above f
DR
, the curve of capaci-
tance vs. reverse bias is flat.
For the HMPP-386x family, f
DR
is
around 500 MHz, resulting in
very low capacitance at zero bias
for frequencies above 1 GHz. See
Figure 1.
Linear Equivalent Circuit
In order to predict the perfor-
mance of the HMPP-386x as a
switch or an attenuator, it is
necessary to construct a model
which can then be used in one of
the several linear analysis pro-
grams presently on the market.
Such a model is given in Figure
11, where R
S
+ R
j
is given in
Figure 2 and C
j
is provided in
Figure 1. Careful examination of
Figure 11 will reveal the fact that
the package parasitics (induc-
tance and capacitance) are much
lower for the MiniPak than they
are for leaded plastic packages
such as the SOT-23, SOT-323 or
others. This will permit the
HMPP-386x family to be used at
higher frequencies than its
conventional leaded counterparts.
20 fF
3
30 fF
1.1 nH
2
1
4
30 fF
20 fF
Single diode package (HMPP-3860)
20 fF
0.05 nH
3
30 fF
0.05 nH
2
12 fF
0.5 nH
0.5 nH
30 fF
0.05 nH
1
0.5 nH
0.5 nH
0.05 nH
4
20 fF
Anti-parallel diode package (HMPP-3862)
20 fF
0.05 nH
3
30 fF
0.05 nH
2
12 fF
0.5 nH
0.5 nH
30 fF
0.05 nH
1
0.5 nH
0.5 nH
0.05 nH
4
20 fF
Parallel diode package (HMPP-3865)
Figure 11. Linear Equivalent Circuit of the
MiniPak PIN Diode.
MiniPak Outline Drawing
1.44 (0.057)
1.40 (0.055)
1.12 (0.044)
1.08 (0.043)
1.20 (0.047)
1.16 (0.046)
0.82 (0.032)
0.78 (0.031)
0.32 (0.013)
0.28 (0.011)
0.00
Top view
0.00
-0.07 (-0.003)
-0.03 (-0.001)
0.92 (0.036)
0.88 (0.035)
0.42 (0.017)
0.38 (0.015)
Bottom view
1.32 (0.052)
1.28 (0.050)
-0.07 (-0.003)
-0.03 (-0.001)
0.70 (0.028)
0.58 (0.023)
Side view
Dimensions are in millimeters (inches)
5
