首页 > 器件类别 > 存储 > 存储

HMU65788H-5

Standard SRAM, 16KX4, 25ns, CMOS, PDSO24,

器件类别:存储    存储   

厂商名称:TEMIC

厂商官网:http://www.temic.de/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
TEMIC
Reach Compliance Code
unknown
Is Samacsys
N
最长访问时间
25 ns
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J24
JESD-609代码
e0
内存密度
65536 bit
内存集成电路类型
STANDARD SRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
24
字数
16384 words
字数代码
16000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
16KX4
输出特性
3-STATE
可输出
NO
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ24,.34
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
电源
5 V
认证状态
Not Qualified
最大待机电流
0.02 A
最小待机电流
4.5 V
最大压摆率
0.1 mA
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
Base Number Matches
1
文档预览
MATRA MHS
HM 65788
16 K
×
4 High Speed CMOS SRAM
Introduction
The HM 65788 is a high speed CMOS static RAM
organized as 16384
×
4 bits. It is manufactured using
MHS’s high performance CMOS technology.
Access times as fast as 15 ns are available with maximum
power consumption of only 633 mW.
The HM 65788 features fully static operation requiring no
external clocks or timing strobes. The automatic
power-down feature reduces the power consumption by
60 % when the circuit is deselected.
Easy memory expansion is provided by an active low chip
select (CS) and three state drivers.
All inputs and outputs of the HM 65788 are TTL
compatible and operate from single 5 V supply thus
simplifying system design.
The HM 65788 is 100 % processed following the test
methods of MIL STD 883 and/or ESA/SCC 9000 making
it ideally suitable for military/space applications that
demand superior levels of performance and reliability.
Features
D
Fast access time
Commercial : 15/20/25/35/45 ns
Industrial/military : 20/25/35/45/55 ns
D
Low power consumption
Active : 267 mW (typ)
Standby : 75 mW (typ)
D
Wide temperature range :
–55°C to + 125°C
D
D
D
D
300 mils width package
TTL compatible inputs and outputs
Asynchronous
Capable of withstanding greater than 2000 V electrostatic
discharge
D
Single 5 volt supply
Interface
Block Diagram
Rev. C (16/12/94)
1
HM 65788
Pin Configuration
Plastic 300 mils, 22 pins, DIL
Ceramic 300 mils, 22 pins, DIL
SOIC & SOJ 300 mils, 24 pins
MATRA MHS
Pinout DIL 22 pins (top view)
Pinout SOIC/SOJ 24 pins
Logic Symbol
Pin Names
A0–A13: Address inputs
I/O0-I/O3
VCC
: Input/Outputs
: Power
GND
CS
W
: Ground
: Chip-Select
: Write Enable
Truth Table
CS
H
L
L
W
X
H
L
DATA–IN
Z
Z
Valid
DATA–OUT
Z
Valid
Z
MODE
Deselect
Read
Write
2
Rev. C (16/12/94)
MATRA MHS
HM 65788
Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Output current into outputs (low) : . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Electro Static Discharge Voltage . . . . . . . . . . . . . . . . . . . . . . > 2001 V
(MIL STD 883C METHOD 3015-2)
Electrical Characteristics
Absolute Maximum Ratings
Supply voltage to GND potential : . . . . . . . . . . . . . . . –0.5 V to +7.0 V
DC input voltage : . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7.0 V
DC output voltage in high Z state : . . . . . . . . . . . . . . –0.5 V to +7.0 V
Operating Range
OPERATING VOLTAGE
Military
Industrial
Commercial
(– 2)
(– 9)
(– 5)
5 V
±
10 %
5 V
±
10 %
5 V
±
10 %
OPERATING TEMPERATURE
– 55_C to + 125_C
– 40_C to + 85_C
0_C to + 70_C
Recommended DC Operating Conditions
PARAMETER
Vcc
Gnd
VIL
VIH
DESCRIPTION
Supply Voltage
Ground
Input low voltage
Input high voltage
MINIMUM
4.5
0.0
– 0.3
2.2
TYPICAL
5.0
0.0
0.0
MAXIMUM
5.5
0.0
0.8
VCC
UNIT
V
V
V
V
Capacitance
PARAMETER
Cin
Cout
Note :
(1)
(1)
DESCRIPTION
Input capacitance
Output capacitance
MINIMUM
TYPICAL
MAXIMUM
5
7
UNIT
pF
pF
1. TA = 25°C, f = 1 MHz, Vcc = 5.0 V. These parameters are not 100 % tested.
DC Parameters
PARAMETER
IIX
IOZ
IOS
VOL
VOH
Note :
(3)
(3)
(4)
(5)
(2)
DESCRIPTION
Input leakage current
Output leakage current
Output short circuit current
Output low voltage
Output high voltage
MINIMUM
– 10.0
– 10.0
2.4
TYPICAL
MAXIMUM
10.0
10.0
– 350.0
0.4
UNIT
µA
µA
mA
V
V
2. Gnd < Vin < Vcc, Gnd < Vout < Vcc Output disabled.
3. Vcc = max, Vout = Gnd, duration of the short circuit should not exceed 30 seconds.
Not more than 1 output should be shorted at one time.
4. Vcc min, IOL = 8.0 mA.
5. Vcc min, IOH = –4.0 mA.
Rev. C (16/12/94)
3
HM 65788
Consumption for Commercial (–5) Specification
SYMBOL
ICCSB
ICCSB1
ICCOP
(6)
(7)
(8)
MATRA MHS
PARAMETER
Standby supply current
Standby supply current
Dynamic operating current
65788
E–5
40
20
115
65788
F–5
40
20
100
65788
H–5
30
20
100
65788
K–5
30
20
100
65788
M–5
30
20
100
UNIT
mA
mA
mA
VALUE
max
max
max
Consumption for Industrial (–9) and Military (–2) Specification
SYMBOL
ICCSB
ICCSB1
ICCOP
Note :
(6)
(7)
(8)
PARAMETER
Standby supply current
Standby supply current
Dynamic operating current
65788
F–9/–2
40
20
115
65788
H–9/–2
40
20
100
65788
K–9/–2
30
20
100
65788
M–9/–2
30
20
100
65788
N–9/–2
30
20
100
UNIT
mA
mA
mA
VALUE
max
max
max
6. CS
VIH min duty cycle = 100 %, a pull-up resistor to Vcc on the CS input is required to keep the device deselected during Vcc
power-up otherwise ICCSB will exceed values above.
7. CS = Vcc – 0.3 V Iout = 0 mA.
8. Vcc max, Output current = 0 mA, f = max, Vin = Vcc or Gnd.
AC Parameters
AC Conditions
Input pulse levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gnd to 3.0 V
Input rise : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Input timing reference levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output loading IOL/IOH
(see figure 1a)
: . . . . . . . . . . . . . . . . . +30 pF
AC Test Loads and Waveforms
Figure 1
a
Figure 1 b
Figure 2
4
Rev. C (16/12/94)
MATRA MHS
Write Cycle : Commercial (–5) Specification
SYMBOL
TAVAV
TAVWL
TAVWH
TDVWH
TELWH
TWLQZ(9)
TWLWH
TWHAX
TWHDX
TWHQX
(8)
HM 65788
PARAMETER
65788
E–5
15
0
12
10
12
7
12
0
0
5
65788
F–5
20
0
15
10
15
7
15
0
0
5
65788
H–5
20
0
20
10
20
7
15
0
0
5
65788
K–5
25
0
25
15
25
10
20
0
0
5
65788
M–5
40
0
30
15
30
15
20
0
0
5
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
VALUE
min
min
min
min
min
max
min
min
min
min
Write cycle time
Address set–up time
Address valid to end to write
Data set–up time
CS low to write end
Write low to high Z
Write pulse width
Address hold to end of write
Data hold time
Write high to low Z
Write Cycle : Industrial (–9) and Military (–2) Specification
SYMBOL
TAVAV
TAVWL
TAVWH
TDVWH
TELWH
TWLQZ(8)
TWLWH
TWHAX
TWHDX
TWHQX
Note :
(8)
PARAMETER
Write cycle time
Address set–up time
Address valid to end to write
Data set–up time
CS low to write end
Write low to high Z
Write pulse width
Address hold to end of write
Data hold time
Write high to low Z
65788
F–9/2
20
0
15
10
15
7
15
0
0
5
65788
H–9/2
20
0
20
10
20
7
15
0
0
5
65788
K–9/2
25
0
25
15
25
10
20
0
0
5
65788
M–9/2
40
0
30
15
30
15
20
0
0
5
65788
N–9/2
50
0
40
20
40
25
30
0
0
5
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
VALUE
min
min
min
min
min
max
min
min
min
min
8. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
Rev. C (16/12/94)
5
查看更多>
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消