HN58X2402S/HN58X2404S
Two-wire serial interface
2k EEPROM (256-word
×
8-bit)
4k EEPROM (512-word
×
8-bit)
ADE-203-1016A (Z)
Preliminary
Rev. 0.1
May. 26, 1999
Description
HN58X24xxS series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 8-byte page programming function to make their write operation faster.
Features
•
Single supply: 1.8 V to 5.5 V
•
Two-wire serial interface (I
2
C
TM
serial bus*
1
)
•
Clock frequency: 400 kHz
•
Power dissipation:
Standby: 3 µA(max)
Active (Read): 1 mA(max)
Active (Write): 3 mA(max)
•
Automatic page write: 8-byte/page
•
Write cycle time: 10 ms (2.7 V to 5.5 V )/15ms (1.8 V to 2.7 V )
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HN58X2402S/HN58X2404S
Features
(cont.)
•
Endurance: 10
5
Cycles (Page write mode)
•
Data retention: 10 Years
•
Small size packages: TSSOP-8pin and SOP-8pin (Die shipment is also available)
Note: 1. I
2
C is a trademark of Philips Corporation.
Ordering Information
Type No.
HN58X2402SFP
HN58X2404SFP
HN58X2402ST
HN58X2404ST
Internal organization Operating voltage
2k bit (256
×
8-bit)
4k bit (512
×
8-bit)
2k bit (256
×
8-bit)
4k bit (512
×
8-bit)
1.8 V to 5.5 V
400 kHz
8-pin plastic TSSOP
(TTP-8D)
Note: Industrial versions (Temperature range: –20 to +85 C, –40 to +85 C) are also available.
Specifications of the industrial versions are identical with the specifications of the 0 to +70 C
version.
1.8 V to 5.5 V
Frequency
400 kHz
Package
150 mil 8-pin plastic SOP
(FP-8DB)
2
HN58X2402S/HN58X2404S
Pin Arrangement
Pin Description
Pin name
A0 to A2
SCL
SDA
WP
V
CC
V
SS
Function
Device address
Serial clock input
Serial data input/output
Write protect
Power supply
Ground
3
HN58X2402S/HN58X2404S
Block Diagram
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range*
Storage temperature range
1
Symbol
V
CC
Vin
Topr
Tstg
Value
–0.6 to +7.0
–0.5* to +7.0*
0 to +70
–65 to +125
2
3
Unit
V
V
C
C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): –3.0 V for pulse width 50 ns.
3. Should not exceed V
CC
+ 1.0 V.
4
HN58X2402S/HN58X2404S
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
V
CC
V
SS
V
IH
V
IL
Topr
50 ns.
Min
1.8
0
V
CC
×
0.7
–0.3*
0
1
Typ
—
0
—
—
—
Max
5.5
0
V
CC
+ 1.0
V
CC
×
0.3
70
Unit
V
V
V
V
C
Notes: 1. V
IL
(min): –1.0 V for pulse width
DC Characteristics
(Ta = 0 to +70 C, V
CC
= 1.8 V to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V
CC
current
Read V
CC
current
Write V
CC
current
Output low voltage
Symbol Min
I
LI
I
LO
I
SB
I
CC1
I
CC2
V
OL2
—
—
—
—
—
—
Typ
—
—
1.0
—
—
—
Max
2.0
2.0
3.0
1.0
3.0
0.4
Unit
µA
µA
µA
mA
mA
V
Test conditions
V
CC
= 5.5 V, Vin = 0 to 5.5 V
V
CC
= 5.5 V, Vout = 0 to 5.5 V
Vin = V
SS
or V
CC
V
CC
= 5.5 V, Read at 400 kHz
V
CC
= 5.5 V, Write at 400 kHz
V
CC
= 4.5 to 5.5 V, I
OL
= 1.6 mA
V
CC
= 2.7 to 4.5 V, I
OL
= 0.8 mA
V
CC
= 1.8 to 2.7 V, I
OL
= 0.4 mA
V
CC
= 1.8 to 2.7 V, I
OL
= 0.2 mA
V
OL1
—
—
0.2
V
Capacitance
(Ta = 25 C, f = 1 MHz)
Parameter
Symbol
1
1
Min
—
—
Typ
—
—
Max
6.0
6.0
Unit
pF
pF
Test
conditions
Vin = 0 V
Vout = 0 V
Input capacitance (A0 to A2, SCL, WP) Cin*
Output capacitance (SDA)
Note:
C
I/O
*
1. This parameter is sampled and not 100% tested.
5
