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HN58X2432STI

4KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, PLASTIC, TSSOP-8

器件类别:存储    存储   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Renesas(瑞萨电子)
零件包装代码
SOIC
包装说明
PLASTIC, TSSOP-8
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
最大时钟频率 (fCLK)
0.4 MHz
JESD-30 代码
R-PDSO-G8
JESD-609代码
e0
长度
4.4 mm
内存密度
32768 bit
内存集成电路类型
EEPROM
内存宽度
8
功能数量
1
端子数量
8
字数
4096 words
字数代码
4000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
4KX8
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
座面最大高度
1.1 mm
串行总线类型
I2C
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
3 mm
最长写入周期时间 (tWC)
15 ms
文档预览
HN58X2432SI/HN58X2464SI
Two-wire serial interface
32k EEPROM (4-kword
×
8-bit)/64k EEPROM (8-kword
×
8-bit)
REJ03C0135-0100Z
(Previous ADE-203-1385 (Z) Rev. 0.0)
Rev. 1.00
Oct. 27, 2003
Description
HN58X2432SI, HN58X2464SI are two-wire serial interface EEPROM (Electrically Erasable and
Programmable ROM). They realize high speed, low power consumption and a high level of reliability by
employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology.
They also have a 32-byte page programming function to make their write operation faster.
Note: Renesas Technology’s serial EEPROM are authorized for using consumer applications such as
cellular phone, camcorders, audio equipment. Therefore, please contact Renesas Technology’s
sales office before using industrial applications such as automotive systems, embedded controllers,
and meters.
Features
Single supply: 1.8 V to 5.5 V
2 TM
1
Two-wire serial interface (I C serial bus* )
Clock frequency: 400 kHz
Power dissipation:
Standby: 3
µ
A (max)
Active (Read): 1 mA (max)
Active (Write): 3 mA (max)
Automatic page write: 32-byte/page
Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
5
Endurance: 10 Cycles (Page write mode)
Data retention: 10 Years
Rev.1.00, Oct.27.2003, page 1 of 21
HN58X2432SI/HN58X2464SI
Small size packages: TSSOP-8pin, SOP-8pin, and SON 8-pin
Shipping tape and reel
TSSOP 8-pin: 3,000 IC/reel
SOP 8-pin: 2,500 IC/reel
SON 8-pin: 3,000 IC/reel
Temperature range:
40 to +85
°
C
There are also lead free products.
Note: 1. I
2
C is a trademark of Philips Corporation.
Ordering Information
Type No.
HN58X2432SFPI
HN58X2464SFPI
HN58X2432STI
HN58X2464STI
HN58X2432SNI
HN58X2464SNI
HN58X2432SFPIE
HN58X2464SFPIE
HN58X2432STIE
HN58X2464STIE
HN58X2432SNIE
HN58X2464SNIE
Internal organization Operating voltage Frequency Package
32k bit (4096
×
8-bit) 1.8 V to 5.5 V
64k bit (8192
×
8-bit)
32k bit (4096
×
8-bit) 1.8 V to 5.5 V
64k bit (8192
×
8-bit)
32k bit (4096
×
8-bit) 1.8 V to 5.5 V
64k bit (8192
×
8-bit)
32k bit (4096
×
8-bit) 1.8 V to 5.5 V
64k bit (8192
×
8-bit)
32k bit (4096
×
8-bit) 1.8 V to 5.5 V
64k bit (8192
×
8-bit)
32k bit (4096
×
8-bit) 1.8 V to 5.5 V
64k bit (8192
×
8-bit)
400 kHz
400 kHz
400 kHz
150 mil 8-pin plastic SOP
(FP-8DBV)
Lead free
8-pin plastic TSSOP
(TTP-8DAV)
Lead free
8-pin plastic SON
(TNP-8DAV)
Lead free
400 kHz
8-pin plastic SON
(TNP-8DA)
400 kHz
8-pin plastic TSSOP
(TTP-8DA)
400 kHz
150 mil 8-pin plastic SOP
(FP-8DB)
Rev.1.00, Oct.27.2003, page 2 of 21
HN58X2432SI/HN58X2464SI
Pin Arrangement
8-pin TSSOP
8-pin SOP
8-pin SON
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
(Top view)
V
CC
WP
SCL
SDA
Pin Description
Pin name
A0 to A2
SCL
SDA
WP
V
CC
V
SS
Function
Device address
Serial clock input
Serial data input/output
Write protect
Power supply
Ground
Block Diagram
V
CC
V
SS
High voltage generator
Address generator
X decoder
Memory array
WP
A0, A1, A2
SCL
SDA
Control
logic
Y decoder
Y-select & Sense amp.
Serial-parallel converter
Rev.1.00, Oct.27.2003, page 3 of 21
HN58X2432SI/HN58X2464SI
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range*
1
Storage temperature range
Symbol
V
CC
Vin
Topr
Tstg
Value
0.6 to +7.0
0.5*
2
to +7.0*
3
40 to +85
65 to +125
Unit
V
V
°
C
°
C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min):
3.0 V for pulse width
50 ns.
3. Should not exceed V
CC
+ 1.0 V.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Note:
Symbol
V
CC
V
SS
V
IH
V
IL
Topr
Min
1.8
0
V
CC
×
0.7
–0.3*
1
–40
Typ
Max
5.5
0
V
CC
+ 1.0
V
CC
×
0.3
+85
Unit
V
V
V
V
°
C
0
1. V
IL
(min):
1.0 V for pulse width
50 ns.
DC Characteristics
(Ta =
40 to +85
°
C, V
CC
= 1.8 V to 5.5 V)
Parameter
Input leakage current
Symbol Min
I
LI
I
LI
Output leakage current
Standby V
CC
current
Read V
CC
current
Write V
CC
current
Output low voltage
I
LO
I
SB
I
CC1
I
CC2
V
OL2
Typ
Max
2.0
20
2.0
3.0
1.0
3.0
0.4
Unit
µ
A
µ
A
µ
A
Test conditions
V
CC
= 5.5 V, Vin = 0 to 5.5 V
(SCL, SDA)
V
CC
= 5.5 V, Vin = 0 to 5.5 V
(A0 to A2, WP)
V
CC
= 5.5 V, Vout = 0 to 5.5 V
Vin = V
SS
or V
CC
V
CC
= 5.5 V, Read at 400 kHz
V
CC
= 5.5 V, Write at 400 kHz
V
CC
= 4.5 to 5.5 V, I
OL
= 1.6 mA
V
CC
= 2.7 to 4.5 V, I
OL
= 0.8 mA
V
CC
= 1.8 to 2.7 V, I
OL
= 0.4 mA
V
CC
= 1.8 to 2.7 V, I
OL
= 0.2 mA
1.0
µA
mA
mA
V
V
OL1
0.2
V
Rev.1.00, Oct.27.2003, page 4 of 21
HN58X2432SI/HN58X2464SI
Capacitance
(Ta = +25
°
C, f = 1 MHz)
Parameter
Output capacitance (SDA)
Note:
Symbol
1
Min
Typ
Max
6.0
6.0
Unit
pF
pF
Test
conditions
Vin = 0 V
Vout = 0 V
Input capacitance (A0 to A2, SCL, WP) Cin*
C
I/O
*
1
1. This parameter is sampled and not 100
%
tested.
AC Characteristics
(Ta =
40 to +85
°
C, V
CC
= 1.8 to 5.5 V)
Test Conditions
Input pules levels:
V
IL
= 0.2
×
V
CC
V
IH
= 0.8
×
V
CC
Input rise and fall time:
20 ns
Input and output timing reference levels: 0.5
×
V
CC
Output load: TTL Gate + 100 pF
Parameter
Clock frequency
Clock pulse width low
Clock pulse width high
Noise suppression time
Access time
Bus free time for next mode
Start hold time
Start setup time
Data in hold time
Data in setup time
Input rise time
Input fall time
Stop setup time
Data out hold time
Write protect hold time
Write protect setup time
Write cycle time
V
CC
= 2.7 V to 5.5 V
V
CC
= 1.8 V to 2.7 V
V
CC
= 3.0 V to 5.5 V
V
CC
= 1.8 V to 3.0 V
Symbol
f
SCL
t
LOW
t
HIGH
t
I
t
AA
t
BUF
t
HD.STA
t
SU.STA
t
HD.DAT
t
HD.DAT
t
SU.DAT
t
R
t
F
t
SU.STO
t
DH
t
HD.WP
t
SU.WP
t
WC
t
WC
Min
Typ
Max
400
Unit
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
Notes
1200
600
50
900
1
100
1200
600
600
10
20
100
300
300
1
1
600
50
1200
0
10
15
2
2
Notes: 1. This parameter is sampled and not 100
%
tested.
2. t
WC
is the time from a stop condition to the end of internally controlled write cycle.
Rev.1.00, Oct.27.2003, page 5 of 21
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