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HN58X25256TI

32X8 SPI BUS SERIAL EEPROM, PDSO14, PLASTIC, TSSOP-14

器件类别:存储    存储   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Renesas(瑞萨电子)
零件包装代码
TSSOP
包装说明
TSSOP,
针数
14
Reach Compliance Code
unknown
ECCN代码
EAR99
最大时钟频率 (fCLK)
5 MHz
JESD-30 代码
R-PDSO-G14
JESD-609代码
e0
长度
5 mm
内存密度
256 bit
内存集成电路类型
EEPROM
内存宽度
8
功能数量
1
端子数量
14
字数
32 words
字数代码
32
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
32X8
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
座面最大高度
1.1 mm
串行总线类型
SPI
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
TIN LEAD
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
4.4 mm
最长写入周期时间 (tWC)
5 ms
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
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making a final decision on the applicability of the information and products. Renesas Technology
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information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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whole or in part these materials.
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than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HN58X25128I/HN58X25256I
Serial Peripheral Interface
128k EEPROM (16-kword
×
8-bit)
256k EEPROM (32-kword
×
8-bit)
Electrically Erasable and Programmable Read Only Memory
ADE-203-1371 (Z)
Preliminary
Rev. 0.0
Nov. 15, 2002
Description
HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and
Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by
employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology.
It also has a 64-byte page programming function to make it’s write operation faster.
Note: Hitachi’s serial EEPROM are authorized for using consumer applications such as cellular phones,
camcorders, audio equipments. Therefore, please contact Hitachi’s sales office before using
industrial applications such as automotive systems, embedded controllers, and meters.
Features
Single supply: 1.8 V to 5.5 V
Serial peripheral interface (SPI bus)
SPI mode 0 (0,0), 3 (1,1)
Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
Power dissipation:
Standby: 3
µA
(max)
Active (Read): 5 mA (max)
Active (Write): 5 mA (max)
Automatic page write: 64-byte/page
Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)
Endurance: 10 Cycles
5
Data retention: 10 Years
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specifications.
HN58X25128I/HN58X25256I
Small size packages: SOP-8pin and TSSOP-14pin
Shipping tape and reel
TSSOP-14pin : 2,000 IC/reel
SOP-8pin
: 2,500 IC/reel
Temperature range:
−40
to
+85 °C
Ordering Information
Type No.
HN58X25128FPI
HN58X25256FPI
HN58X25128TI
HN58X25256TI
Internal organization
128-kbit (16834
×
8-bit)
256-kbit (32768
×
8-bit)
128-kbit (16834
×
8-bit)
256-kbit (32768
×
8-bit)
1.8 V to 5.5 V
Operating voltage Frequency
1.8 V to 5.5 V
5 MHz
(2.5 V to 5.5 V)
3 MHz
(1.8 V to 5.5 V)
5 MHz
(2.5 V to 5.5 V)
3 MHz
(1.8 V to 5.5 V)
14-pin plastic
TSSOP (TTP-14D)
Package
150mil 8-pin plastic
SOP (FP-8DB)
Rev.0.0, Nov. 2002, page 2 of 27
HN58X25128I/HN58X25256I
Pin Arrangement
8-pin SOP
14-pin TSSOP
8
7
6
5
V
CC
S
Q
1
2
3
4
S
Q
NC
NC
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
HOLD
C
D
HOLD
NC
NC
NC
W
V
SS
(Top view)
W
V
SS
C
D
(Top view)
Pin Description
Pin name
C
D
Q
S
W
HOLD
V
CC
V
SS
Function
Serial clock
Serial data input
Serial data output
Chip select
Write protect
Hold
Supply voltage
Ground
Rev.0.0, Nov. 2002, page 3 of 27
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参数对比
与HN58X25256TI相近的元器件有:HN58X25256FPI、HN58X25128TI、HN58X25128FPI。描述及对比如下:
型号 HN58X25256TI HN58X25256FPI HN58X25128TI HN58X25128FPI
描述 32X8 SPI BUS SERIAL EEPROM, PDSO14, PLASTIC, TSSOP-14 32X8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8 16X8 SPI BUS SERIAL EEPROM, PDSO14, PLASTIC, TSSOP-14 16X8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8
是否无铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 TSSOP SOIC TSSOP SOIC
包装说明 TSSOP, SOP, SOP8,.25 TSSOP, TSSOP14,.25 SOP, SOP8,.25
针数 14 8 14 8
Reach Compliance Code unknown unknown compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大时钟频率 (fCLK) 5 MHz 5 MHz 5 MHz 5 MHz
JESD-30 代码 R-PDSO-G14 R-PDSO-G8 R-PDSO-G14 R-PDSO-G8
JESD-609代码 e0 e0 e0 e0
长度 5 mm 4.89 mm 5 mm 4.89 mm
内存密度 256 bit 256 bit 128 bit 128 bit
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM
内存宽度 8 8 8 8
功能数量 1 1 1 1
端子数量 14 8 14 8
字数 32 words 32 words 16 words 16 words
字数代码 32 32 16 16
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
组织 32X8 32X8 16X8 16X8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP SOP TSSOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE
并行/串行 SERIAL SERIAL SERIAL SERIAL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.1 mm 1.73 mm 1.1 mm 1.73 mm
串行总线类型 SPI SPI SPI SPI
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 1.27 mm 0.65 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 4.4 mm 3.9 mm 4.4 mm 3.9 mm
最长写入周期时间 (tWC) 5 ms 5 ms 5 ms 5 ms
数据保留时间-最小值 - 10 10 10
耐久性 - 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles
封装等效代码 - SOP8,.25 TSSOP14,.25 SOP8,.25
电源 - 2/5 V 2/5 V 2/5 V
最大待机电流 - 0.000003 A 0.000003 A 0.000003 A
最大压摆率 - 0.004 mA 0.004 mA 0.004 mA
写保护 - HARDWARE/SOFTWARE HARDWARE/SOFTWARE HARDWARE/SOFTWARE
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