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HN58X2564TIAG

Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory

器件类别:存储    存储   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否无铅
不含铅
厂商名称
Renesas(瑞萨电子)
零件包装代码
SOIC
包装说明
TSSOP,
针数
8
Reach Compliance Code
unknow
ECCN代码
EAR99
最大时钟频率 (fCLK)
3 MHz
JESD-30 代码
R-PDSO-G8
长度
4.4 mm
内存密度
65536 bi
内存集成电路类型
EEPROM
内存宽度
8
湿度敏感等级
1
功能数量
1
端子数量
8
字数
8192 words
字数代码
8000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
8KX8
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.1 mm
串行总线类型
SPI
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
20
宽度
3 mm
最长写入周期时间 (tWC)
8 ms
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HN58X2532IAG
HN58X2564IAG
Serial Peripheral Interface
32k EEPROM (4-kword
×
8-bit)
64k EEPROM (8-kword
×
8-bit)
Electrically Erasable and Programmable Read Only Memory
REJ03C0306-0100
Rev.1.00
Nov.16.2006
Description
HN58X25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and
Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing
advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte
page programming function to make it’s write operation faster.
Features
Single supply: 1.8 V to 5.5 V
Serial Peripheral Interface compatible (SPI bus)
SPI mode 0 (0,0), 3 (1,1)
Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)
Power dissipation:
Standby: 3
µA
(max)
Active (Read): 3.0 mA (max)
Active (Write): 3.5 mA (max)
Automatic page write: 32-byte/page
Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)
Endurance: 10
6
Erase/Write Cycles
Data retention: 10 Years
Small size packages: SOP-8pin, TSSOP-8pin
Shipping tape and reel
TSSOP-8pin : 3,000 IC/reel
SOP-8pin
: 2,500 IC/reel
Temperature range:
−40
to
+85°C
Lead free product.
Rev.1.00, Nov.16.2006, page 1 of 20
HN58X2532IAG/HN58X2564IAG
Ordering Information
Type No.
HN58X2532FPIAG
HN58X2564FPIAG
HN58X2532TIAG
HN58X2564TIAG
Internal organization
32-kbit (4096
×
8-bit)
64-kbit (8192
×
8-bit)
32-kbit (4096
×
8-bit)
64-kbit (8192
×
8-bit)
1.8 V to 5.5 V
Operating voltage
1.8 V to 5.5 V
Frequency
5 MHz
(2.5 V to 5.5 V)
3 MHz
(1.8 V to 5.5V)
5 MHz
(2.5 V to 5.5 V)
3 MHz
(1.8 V to 5.5 V)
Package
150mil 8-pin plastic SOP
PRSP0008DF-B
(FP-8DBV)
Lead free
8-pin plastic TSSOP
PTSP0008JC-B
(TTP-8DAV)
Lead free
Pin Arrangement
8-pin SOP/TSSOP
S
Q
W
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
C
D
(Top view)
Pin Description
Pin name
C
D
Q
S
W
HOLD
V
CC
V
SS
Function
Serial clock
Serial data input
Serial data output
Chip select
Write protect
Hold
Supply voltage
Ground
Rev.1.00, Nov.16.2006, page 2 of 20
HN58X2532IAG/HN58X2564IAG
Block Diagram
High voltage generator
V
CC
V
SS
Address generator
X
decoder
W
C
HOLD
D
Q
Control logic
S
Memory array
Y
decoder
Y-select & Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range*
1
Symbol
V
CC
V
IN
Topr
Value
−0.6
to + 7.0
−0.5*
2
to +7.0*
3
−40
to +85
−65
to +125
Unit
V
V
°C
°C
Storage temperature range
Tstg
Notes: 1. Including electrical characteristics and data retention.
2. V
IN
(min):
−3.0
V for pulse width
50 ns.
3. Should not exceed V
CC
+
1.0 V.
DC Operating Conditions
Parameter
Supply voltage
Input voltage
Operating temperature range
Symbol
V
CC
V
SS
V
IH
V
IL
Topr
Min
1.8
0
V
CC
×
0.7
−0.3*
1
−40
Typ
0
Max
5.5
0
V
CC
+
0.5*
2
V
CC
×
0.3
+85
Unit
V
V
V
V
°C
Notes: 1. V
IN
(min):
−1.0
V for pulse width
50 ns.
2. V
IN
(max): V
CC
+ 1.0 V for pulse width
50 ns.
Rev.1.00, Nov.16.2006, page 3 of 20
HN58X2532IAG/HN58X2564IAG
DC Characteristics
Parameter
Input leakage current
Output leakage current
V
CC
current
Standby
Active
Symbol
I
LI
I
LO
I
SB
I
CC1
Min
Max
2
2
3
2
Unit
µA
µA
µA
mA
Test conditions
V
CC
= 5.5 V, V
IN
= 0 to 5.5 V
(S, D, C,
HOLD, W)
V
CC
= 5.5 V, V
OUT
= 0 to 5.5 V
(Q)
V
IN
= V
SS
or V
CC
,
V
CC
= 5.5 V
V
CC
= 3.6 V, Read at 5 MHz
V
IN
= V
CC
×
0.1/V
CC
×
0.9 Q =
OPEN
V
CC
= 5.5 V, Read at 5 MHz
V
IN
= V
CC
×
0.1/V
CC
×
0.9 Q =
OPEN
V
CC
= 3.6 V, Write at 5 MHz
V
IN
= V
CC
×
0.1/V
CC
×
0.9
V
CC
= 5.5 V, Write at 5 MHz
V
IN
= V
CC
×
0.1/V
CC
×
0.9
V
CC
= 5.5 V, I
OL
= 2 mA
V
CC
= 2.5 V, I
OL
= 1.5 mA
V
CC
= 5.5 V, I
OL
=
−2
mA
V
CC
= 2.5 V, I
OL
=
−0.4
mA
3
mA
I
CC2
2
3.5
0.4
0.4
mA
mA
V
V
V
V
Output voltage
V
OL1
V
OL2
V
OH1
V
OH2
V
CC
×
0.8
V
CC
×
0.8
Rev.1.00, Nov.16.2006, page 4 of 20
HN58X2532IAG/HN58X2564IAG
AC Characteristics
Test Conditions
Input pules levels:
V
IL
= V
CC
×
0.2
V
IH
= V
CC
×
0.8
Input rise and fall time:
10 ns
Input and output timing reference levels: V
CC
×
0.3, V
CC
×
0.7
Output reference levels: V
CC
×
0.5
Output load: 100 pF
Parameter
Clock frequency
S
active setup time
S
not active setup time
S
deselect time
S
active hold time
S
not active hold time
Clock high time
Clock low time
Clock rise time
Clock fall time
Data in setup time
Data in hold time
Clock low hold time after
HOLD
not active
Clock low hold time after
HOLD
active
Clock high setup time before
HOLD
active
Clock high setup time before
HOLD
not
active
Symbol
f
C
t
SLCH
t
SHCH
t
SHSL
t
CHSH
t
CHSL
t
CH
t
CL
t
CLCH
t
CHCL
t
DVCH
t
CHDX
t
HHCH
t
HLCH
t
CHHL
t
CHHH
Alt
f
SCK
t
CSS1
t
CSS2
t
CS
t
CSH
t
CLH
t
CLL
t
RC
t
FC
t
DSU
t
DH
Min
90
90
90
90
90
90
90
20
30
70
40
60
60
(Ta =
−40
to
+85°C,
V
CC
= 2.5 V to 5.5 V)
Max
5
1
1
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
cycles
Notes
1
1
2
2
Output disable time
t
SHQZ
t
DIS
100
Clock low to output valid
t
CLQV
t
V
70
Output hold time
t
CLQX
t
HO
0
Output rise time
t
QLQH
t
RO
50
Output fall time
t
QHQL
t
FO
50
HOLD
high to output low-Z
t
HHQX
t
LZ
50
HOLD
low to output high-Z
t
HLQZ
t
HZ
100
Write time
t
W
t
WC
5
6
Erase / Write Endurance
10
Notes: 1. t
CH
+
t
CL
1/f
C
2. Value guaranteed by characterization, not 100% tested in production.
3. Value guaranteed by characterization, not 100% tested in products (Ta = 25°C).
2
2
2
2
2
3
Rev.1.00, Nov.16.2006, page 5 of 20
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参数对比
与HN58X2564TIAG相近的元器件有:HN58X2532FPIAG、HN58X2532IAG、HN58X2564FPIAG、HN58X2532TIAG。描述及对比如下:
型号 HN58X2564TIAG HN58X2532FPIAG HN58X2532IAG HN58X2564FPIAG HN58X2532TIAG
描述 Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) - Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 SOIC SOIC - SOIC SOIC
包装说明 TSSOP, SOP, - SOP, TSSOP,
针数 8 8 - 8 8
Reach Compliance Code unknow unknown - unknow unknow
ECCN代码 EAR99 EAR99 - EAR99 EAR99
最大时钟频率 (fCLK) 3 MHz 3 MHz - 3 MHz 3 MHz
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8
长度 4.4 mm 4.89 mm - 4.89 mm 4.4 mm
内存密度 65536 bi 32768 bit - 65536 bi 32768 bi
内存集成电路类型 EEPROM EEPROM - EEPROM EEPROM
内存宽度 8 8 - 8 8
功能数量 1 1 - 1 1
端子数量 8 8 - 8 8
字数 8192 words 4096 words - 8192 words 4096 words
字数代码 8000 4000 - 8000 4000
工作模式 SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C - 85 °C 85 °C
最低工作温度 -40 °C -40 °C - -40 °C -40 °C
组织 8KX8 4KX8 - 8KX8 4KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP SOP - SOP TSSOP
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行 SERIAL SERIAL - SERIAL SERIAL
认证状态 Not Qualified Not Qualified - Not Qualified Not Qualified
座面最大高度 1.1 mm 1.73 mm - 1.73 mm 1.1 mm
串行总线类型 SPI SPI - SPI SPI
最大供电电压 (Vsup) 5.5 V 5.5 V - 5.5 V 5.5 V
最小供电电压 (Vsup) 1.8 V 1.8 V - 1.8 V 1.8 V
标称供电电压 (Vsup) 2.5 V 2.5 V - 2.5 V 2.5 V
表面贴装 YES YES - YES YES
技术 CMOS CMOS - CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL - INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING - GULL WING GULL WING
端子节距 0.65 mm 1.27 mm - 1.27 mm 0.65 mm
端子位置 DUAL DUAL - DUAL DUAL
宽度 3 mm 3.9 mm - 3.9 mm 3 mm
最长写入周期时间 (tWC) 8 ms 8 ms - 8 ms 8 ms
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