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HN62448NTT-12

MASK ROM, 1MX8, 120ns, CMOS, PDSO44, PLASTIC, TSOP2-44

器件类别：存储    存储   

厂商名称：Hitachi （Renesas ）

厂商官网：http://www.renesas.com/eng/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Hitachi （Renesas ）
零件包装代码
TSOP2
包装说明
TSOP2, TSOP44,.46,32
针数
44
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
120 ns
其他特性
USER CONFIGURABLE AS 512K X 16; TTL COMPATIBLE I/O; PAGE ACCESS TIME = 50NS
备用内存宽度
8
JESD-30 代码
R-PDSO-G44
JESD-609代码
e0
长度
18.41 mm
内存密度
8388608 bit
内存集成电路类型
MASK ROM
内存宽度
8
功能数量
1
端子数量
44
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX8
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装等效代码
TSOP44,.46,32
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
并行/串行
PARALLEL
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
座面最大高度
1.2 mm
最大待机电流
0.00003 A
最大压摆率
0.1 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
HN62448N Series
524288-word
×
16-bit/1048576-word
×
8-bit CMOS Mask
Programmable ROM
ADE-203-385B (Z)
Rev. 2.0
Oct. 21, 1996
Description
The Hitachi HN62448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by
16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the most suitable to the
system using a high speed microcomputer by 16 bits.
Features
•
Single 5 V power supply
•
Access time:
Normal access time: 100/120 ns (max)
Page access time: 40/50 ns (max)
•
Low power dissipation
Active: 300 mW (typ)
Standby: 5
µW
(typ)
•
Byte-wide or word-wide data organization with BHE
•
4-word page access mode
•
Three-state data output for wired or-tying
•
Directly TTL compatible (All input and output)
Ordering Information
Type No.
HN62448NP-10
HN62448NP-12
HN62448NFB-10
HN62448NFB-12
HN62448NTT-10
HN62448NTT-12
Access time
100 ns
120 ns
100 ns
120 ns
100 ns
120 ns
Package
600mil 42-pin plastic DIP (DP-42)
44-pin plastic SOP (FP-44D)
44-pin plastic TSOP II (TTP-44D)
HN62448N Series
Pin Arrangement
HN62448NP Series
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
(Top view)
HN62448NTT Series
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
(Top view)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
V
SS
D15/A-1
D7
D14
D6
D13
D5
D12
D4
V
CC
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
V
SS
D15/A-1
D7
D14
D6
D13
D5
D12
D4
V
CC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
D0
D8
D1
D9
D2
D10
D3
D11
HN62448NFB Series
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
(Top view)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
V
SS
D15/A-1
D7
D14
D6
D13
D5
D12
D4
V
CC
2
HN62448N Series
Pin Description
Pin name
A0 to A18
D0 to D14
D15/A-1
OE
CE
BHE
V
CC
V
SS
NC
Function
Address input
Data output
Data output/address input
Output enable
Chip enable
Byte/word selection
Power supply
Ground
No connection
Block Diagram
A0
to
A15
Address
buffer
A16
to
A18
X decoder
Memory array
Y decoder
Y gates
(A0, A1)
(A-1)
*1
Page decoder
Hex / byte
BHE
OE
3-state output
buffer
CE
BHE = V
IH
: 16-bit (D15 to D0)
BHE = V
IL
: 8-bit (D7 to D0)
*2
Note:
1. A-1 is least significant address.
2. When BHE is ‘low’, D14 to D8 goes the high impedance state.
D0 to D15/(D7)
3
HN62448N Series
Absolute Maximum Ratings
Parameter
Supply voltage
All input and output voltage
Operating temperature range
Storage temperature range
Temperature under bias
Note:
1. With respect to V
SS
.
Symbol
V
CC
Vin, Vout
Topr
Tstg
Tbias
Value
–0.3 to +7.0
–0.3 to V
CC
+0.3
0 to 70
–55 to +125
–20 to +85
Unit
V
V
°C
°C
°C
Note
1
1
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input voltage
V
IH
V
IL
Min
4.5
0
2.2
–0.3
Typ
5.0
0
—
—
Max
5.5
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
DC Characteristics
(V
CC
= 5 V
±
10%, V
SS
= 0 V, Ta = 0 to +70°C)
Parameter
Supply current
Active
Standby
Standby
Input leakage current
Output leakage current
Output voltage
Symbol
I
CC
I
SB1
I
SB2
|I
IL
|
|I
OL
|
V
OH
V
OL
Min
—
—
—
—
—
2.4
—
Max
Unit
µA
mA
µA
µA
V
V
Test conditions
V
CC
= 5.5 V, I
DOUT
= 0 mA, t
RC
= 100/120 ns
V
CC
= 5.5 V,
CE
≥
V
CC
–0.2 V
V
CC
= 5.5 V,
CE
≥
2.2 V
Vin = 0 to V
CC
CE
= 2.2 V, V
OUT
= 0 to V
CC
I
OH
= –205
µA
I
OL
= 1.6 mA
120/100 mA
30
3
10
10
—
0.4
Capacitance
(V
CC
= 5 V
±
10%, V
SS
= 0 V, Ta = 25°C, Vin = 0 V, f = 1 MHz)
Parameter
Input capacitance*
1
Output capacitance*
1
Note:
Symbol
Cin
Cout
Min
—
—
Max
15
15
Unit
pF
pF
1. This parameter is periodically sampled and not 100% tested.
4
HN62448N Series
AC Characteristics
(V
CC
= 5 V
±
10%, V
SS
= 0 V, Ta = 0 to + 70°C)
Test Condition
•
•
•
•
Output load: 1TTL gate + C
L
= 100 pF (including scope & jig)
Input pulse levels: 0.45 to 2.8 V
Input and output timing reference levels: 1.5V
Input rise and fall time: 5 ns
Read Cycle
HN62448N-10
Parameter
Read cycle time
Page read cycle time
Address access time
Page address access time
CE
access time
OE
access time
BHE access time
Output hold time from address change
Output hold time from
CE
Output hold time from
OE
Output hold time from BHE
CE
to output in high-Z
OE
to output in high-Z
BHE to output in high-Z
CE
to output in low-Z
OE
to output in low-Z
BHE to output in low-Z
Symbol
t
RC
t
PC
t
AA
t
PA
t
ACE
t
OE
t
BHE
t
DHA
t
DHC
t
DHO
t
DHB
t
CHZ
t
OHZ
t
BHZ
t
CLZ
t
OLZ
t
BLZ
Min
100
40
—
—
—
—
—
0
0
0
0
—
—
—
5
5
5
Max
—
—
100
40
100
40
100
—
—
—
—
40
40
40
—
—
—
HN62448N-12
Min
120
50
—
—
—
—
—
0
0
0
0
—
—
—
5
5
5
Max
—
—
120
50
120
50
120
—
—
—
—
40
40
40
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
1
1
4
4
2
2
2
3
3
3
Note
5
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参数对比
与HN62448NTT-12相近的元器件有：HN62448NP-10、HN62448NTT-10、HN62448NFB-12、HN62448NP-12。描述及对比如下：
型号 HN62448NTT-12 HN62448NP-10 HN62448NTT-10 HN62448NFB-12 HN62448NP-12
描述 MASK ROM, 1MX8, 120ns, CMOS, PDSO44, PLASTIC, TSOP2-44 MASK ROM, 1MX8, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 MASK ROM, 1MX8, 100ns, CMOS, PDSO44, PLASTIC, TSOP2-44 MASK ROM, 1MX8, 120ns, CMOS, PDSO44, PLASTIC, SOP-44 MASK ROM, 1MX8, 120ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
零件包装代码 TSOP2 DIP TSOP2 SOIC DIP
包装说明 TSOP2, TSOP44,.46,32 DIP, DIP42,.6 TSOP2, TSOP44,.46,32 SOP, SOP44,.63 DIP, DIP42,.6
针数 44 42 44 44 42
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 120 ns 100 ns 100 ns 120 ns 120 ns
其他特性 USER CONFIGURABLE AS 512K X 16; TTL COMPATIBLE I/O; PAGE ACCESS TIME = 50NS USER CONFIGURABLE AS 512K X 16; TTL COMPATIBLE I/O; PAGE ACCESS TIME = 40NS USER CONFIGURABLE AS 512K X 16; TTL COMPATIBLE I/O; PAGE ACCESS TIME = 40NS USER CONFIGURABLE AS 512K X 16; TTL COMPATIBLE I/O; PAGE ACCESS TIME = 50NS USER CONFIGURABLE AS 512K X 16; TTL COMPATIBLE I/O; PAGE ACCESS TIME = 50NS
备用内存宽度 8 8 8 8 8
JESD-30 代码 R-PDSO-G44 R-PDIP-T42 R-PDSO-G44 R-PDSO-G44 R-PDIP-T42
JESD-609代码 e0 e0 e0 e0 e0
长度 18.41 mm 52.8 mm 18.41 mm 28.5 mm 52.8 mm
内存密度 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit
内存集成电路类型 MASK ROM MASK ROM MASK ROM MASK ROM MASK ROM
内存宽度 8 8 8 8 8
功能数量 1 1 1 1 1
端子数量 44 42 44 44 42
字数 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000 1000000 1000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C
组织 1MX8 1MX8 1MX8 1MX8 1MX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 DIP TSOP2 SOP DIP
封装等效代码 TSOP44,.46,32 DIP42,.6 TSOP44,.46,32 SOP44,.63 DIP42,.6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE IN-LINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 5.06 mm 1.2 mm 3 mm 5.06 mm
最大待机电流 0.00003 A 0.00003 A 0.00003 A 0.00003 A 0.00003 A
最大压摆率 0.1 mA 0.12 mA 0.12 mA 0.1 mA 0.1 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V
表面贴装 YES NO YES YES NO
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
端子节距 0.8 mm 2.54 mm 0.8 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 10.16 mm 15.24 mm 10.16 mm 12.6 mm 15.24 mm
厂商名称 Hitachi （Renesas ） Hitachi （Renesas ） - Hitachi （Renesas ） Hitachi （Renesas ）
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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