DATA SHEET
COMPOUND TRANSISTOR
HQ1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 2A high current drives such as ICs, motors, and solenoids
available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HQ1 SERIES LISTS
Products
HQ1L2N
HQ1A3M
HQ1F3M
HQ1F3P
HQ1L2Q
HQ1F2Q
HQ1A4A
Marking
DP
DQ
DR
DS
DT
DU
DX
R
1
(KΩ)
0.47
1.0
2.2
2.2
0.47
0.22
−
R
2
(KΩ)
1.0
1.0
2.2
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
**
T
j
T
stg
Ratings
−20
−20
−10
−2.0
−3.0
−0.04
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50 %
** When 0.7 mm
×
16 cm ceramic board is used
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16183EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
HQ1 SERIES
HQ1L2N
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
IN
=
−5.0
V, I
C
=
−0.7
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
329
0.7
470
1.0
50
150
50
−0.55
−0.3
611
1.3
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
Ω
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
HQ1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
IN
=
−5.0
V, I
C
=
−0.5
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
0.7
0.7
1.0
1.0
50
100
50
−0.4
−0.3
1.3
1.3
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
HQ1F3M
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
IN
=
−5.0
V, I
C
=
−0.3
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
1.54
1.54
2.2
2.2
80
150
50
−0.3
−0.3
2.86
2.86
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
2
Data Sheet D16183EJ1V0DS
HQ1 SERIES
HQ1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
IN
=
−5.0
V, I
C
=
−0.3
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
1.54
7
2.2
10
200
150
50
−0.3
−0.3
2.86
13
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
HQ1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
IN
=
−5.0
V, I
C
=
−0.7
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
329
3.29
470
4.7
150
150
50
−0.55
−0.3
611
6.11
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
Ω
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
HQ1F2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
IN
=
−5.0
V, I
C
=
−0.7
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
154
1.54
220
2.2
80
150
50
−0.55
−0.3
286
2.86
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
kΩ
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
Data Sheet D16183EJ1V0DS
3
HQ1 SERIES
HQ1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
CE(sat)
**
V
IL
**
R
1
R
2
Conditions
V
CB
=
−20
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
I
C
=
−1.0
A, I
B
=
−20
mA
V
CE
=
−5.0
V, I
C
=
−100
µ
A
−
7
−
10
200
150
50
−0.35
−0.45
−0.3
−
13
MIN.
TYP.
MAX.
−100
Unit
nA
−
−
−
V
V
Ω
kΩ
** PW
≤
350
µ
s, duty cycle
≤
2 %
4
Data Sheet D16183EJ1V0DS
HQ1 SERIES
TYPICAL CHARACTERISTICS (T
a
= 25°C)
°
Data Sheet D16183EJ1V0DS
5
微控制器 MCU
