2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. D1 = D2 = IN4002 or Equivalent/Board
4. |(V+) - (V-)| = 31V
±1V
2
HS-5104ARH
Die Characteristics
DIE DIMENSIONS:
95 mils x 99 mils x 19 mils
±1
mils
(2420µm x 2530µm x 483µm
±25.4µm)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
Å
±2k
Å
Nitride Thickness: 3.5k
Å
±1.5k
Å
Top Metallization:
Type: Al, 1% Cu
Thickness: 16k
Å
±2k
Å
Substrate:
Bipolar Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
175
Metallization Mask Layout
HS-5104ARH
+IN2
V+
+IN1
-IN2
-IN1
OUT2
OUT3
OUT1
OUT4
-IN3
-IN4
+IN3
V-
+IN4
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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