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HS3A

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:苏州固锝(Good-Ark)

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
R-PDSO-C2
Reach Compliance Code
compliant
应用
EFFICIENCY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
JEDEC-95代码
DO-214AB
JESD-30 代码
R-PDSO-C2
最大非重复峰值正向电流
150 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大重复峰值反向电压
50 V
最大反向电流
10 µA
最大反向恢复时间
0.05 µs
表面贴装
YES
端子形式
C BEND
端子位置
DUAL
Base Number Matches
1
文档预览
HS3A thru HS3M
High Efficient Surface Mount Rectifiers
Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic placement
Fast switching for high efficiency
High temperature soldering:
250
o
C/10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Classification 94V-O
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Weight: 0.009 ounce, 0.21 gram
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
See Fig.2
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method)
Maximum instantaneous forward voltage @ 3.0A
Maximum DC reverse current
at rated DC blocking voltage
@ T
A
=25
o
C
@ T
A
=100
o
C
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
T
J
T
STG
50
80
-55 to +150
-55 to +150
1.0
10.0
200
75
50
H S 3A
50
35
50
H S 3B
100
70
100
H S 3D
200
140
200
H S 3F
300
210
300
3.0
H S 3G
400
280
400
H S 3J
600
420
600
H S 3K
800
560
800
H S 3M
1000
700
1000
Units
Volts
Volts
Volts
Amps
150.0
1.3
1.7
Amps
Volts
uA
uA
nS
pF
o
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating junction temperature range
Storage temperature range
Notes:
C
C
o
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
181
RATINGS AND CHARACTERISTIC CURVES
182
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