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HS5KHR6

Rectifiers 5A,800V, GP HIGH EFFICIENT SMD RECTIFIER

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
RoHS
Details
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
DO-214AB-2
Vr - Reverse Voltage
800 V
If - Forward Current
5 A
类型
Type
Fast Recovery Rectifiers
Configuration
Single
Vf - Forward Voltage
1.7 V
Max Surge Current
150 A
Ir - Reverse Current
10 uA
Recovery Time
75 ns
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.007408 oz
文档预览
HS5A - HS5M
Taiwan Semiconductor
5A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
Glass passivated junction chip
Ideal for automated placement
Low forward voltage drop
Low profile package
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
5
50 - 1000
150
150
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive and
telecommunication.
Configuration
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave uperimposed on
rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M UNIT
HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M
50
35
50
100
70
100
200
140
200
300
210
300
5
150
- 55 to +150
- 55 to +150
400
280
400
600
420
600
800
560
800
1000
700
1000
A
A
°C
°C
V
V
1
Version:I1708
HS5A - HS5M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
60
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
(2)
CONDITIONS
SYMBOL
TYP.
-
MAX.
-
-
1.35
UNIT
V
V
V
Forward voltage per diode
(1)
I
F
= 3A, T
J
= 25°C
V
F
-
-
-
I
F
= 5A, T
J
= 25°C
V
F
-
-
T
J
= 25°C
T
J
= 125°C
-
-
1.00
1.30
1.70
10
250
V
V
V
µA
µA
Forward voltage per diode
(1)
Reverse current @ rated V
R
per diode
I
R
Junction capacitance
Reverse recovery time
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
80
1 MHz, V
R
=4.0V
C
J
50
-
pF
-
pF
-
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
t
rr
-
50
ns
75
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:I1708
HS5A - HS5M
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R7
R6
HS5x
(Note 1)
H
M6
V7
V6
Note :
1. "x" defines voltage from 50V (HS5A) to 1000V (HS5M)
G
PACKING CODE
SUFFIX
PACKAGE
SMC
SMC
SMC
Matrix SMC
Matrix SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
HS5AHR7G
PART NO.
HS5A
PART NO.
SUFFIX
H
PACKING
CODE
R7
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:I1708
HS5A - HS5M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
6
AVERAGE FORWARD CURRENT (A)
175
150
JUNCTION CAPACITANCE (pF)
125
100
75
50
25
0
HS5J - HS5M
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
HS5A - HS5G
Fig.2 Typical Junction Capacitance
5
4
3
2
1
0
0
25
50
75
100
125
150
RESISTIVE OR
INDUCTIVE LOAD
AMBIENT TEMPERATURE (
o
C)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
100 10
Fig.4 Typical Forward Characteristics
1
10
0.1
UF1DLW
T
J
=125°C
HS5A - HS5D
100
T
J
=100
°
C
10
T
J
=25
°
C
1
0
20
40
60
80
100
120
140
T
J
=25°C
1
0.01
HS5G
Pulse width
0.001
0.1
0.2
0.3
0.4
0.4
0.5
0.6
0.6
0.7
0.8
HS5J - HS5M
0.8
0.9
1
1
1.2
1.1
1.4
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:I1708
(A)
HS5A - HS5M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
200
PEAK FORWARD SURGE CURRENT (A)
100
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:I1708
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