HSB124S-J
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-488(Z)
Rev 0
Features
•
Low reverse current.(I
R
= 0.01µAmax)
•
CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSB124S-J
Laser Mark
A1
Package Code
CMPAK
Outline
HSB124S-J
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak
forward surge current
Average rectified current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM*1
I
FSM *2
I
O*1
Tj
Tstg
Value
85
80
300
4
100
125
–55 to +125
Unit
V
V
mA
A
mA
°C
°C
Notes: 1. Two device total.
2. Value at duration of 1µsec, two device total.
Electrical Characteristics
(Ta = 25°C) *
1
Item
Forward voltage
Reverse current
Capacitance
Reverse recovery
time
Note:
Symbol
V
F
I
R
C
t
rr
Min
—
—
—
—
Typ
—
—
—
—
Max
1.2
0.01
4.0
100
Unit
V
µA
pF
ns
Test Condition
I
F
= 100 mA
V
R
= 80V
V
R
= 0V, f = 1 MHz
I
F
= 10 mA, V
R
= 6V, R
L
= 50Ω
1. Per one device.
2
HSB124S-J
Main Characteristic
3
HSB124S-J
Package Dimensions
Unit : mm
4
