HSMS-286x Series
Surface Mount Microwave Schottky Detector Diodes
Data Sheet
Description
Avago’s HSMS‑286x family of DC biased detector diodes
have been designed and optimized for use from 915 MHz
to 5.8 GHz. They are ideal for RF/ID and RF Tag applications
as well as large signal detection, modulation, RF to DC
conversion or voltage doubling.
Available in various package configurations, this family
of detector diodes provides low cost solutions to a wide
variety of design problems. Avago’s manufacturing
techniques assure that when two or more diodes are
mounted into a single surface mount package, they
are taken from adjacent sites on the wafer, assuring the
highest possible degree of match.
Features
•
Surface Mount SOT‑23/SOT‑143 Packages
•
Miniature SOT‑323 and SOT‑363 Packages
•
High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
up to 35 mV/µW at 2.45 GHz
up to 25 mV/µW at 5.80 GHz
•
Low FIT (Failure in Time) Rate*
•
Tape and Reel Options Available
•
Unique Configurations in Surface Mount SOT‑363
Package
– increase flexibility
– save board space
– reduce cost
•
HSMS‑286K Grounded Center Leads Provide up to
10 dB Higher Isolation
•
Matched Diodes for Consistent Performance
•
Better Thermal Conductivity for Higher Power
Dissipation
•
Lead‑free
*
For more information see the Surface Mount Schottky Reliability
Data Sheet.
Pin Connections and Package Marking
1
2
3
6
5
4
Notes:
1. Package marking provides orientation and identification.
2. The first two characters are the package marking code.
The third character is the date code.
SOT-23/SOT-143 Package Lead Code Identification
(top view)
SINGLE
3
SERIES
3
PLx
1
#0
2
1
#2
2
COMMON
CATHODE
3
1
#3
2
1
#4
2
UNCONNECTED
PAIR
3
4
1
#5
2
SOT-323 Package Lead Code Identification (top view)
SINGLE
3
SERIES
3
1
B
2
1
C
2
COMMON
ANODE
3
COMMON
CATHODE
3
COMMON
ANODE
3
1
E
2
1
F
2
SOT-363 Package Lead Code Identification (top view)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
UNCONNECTED
TRIO
6
5
4
1
6
K
BRIDGE
QUAD
5
4
2
3
1
2
L
3
6
RING
QUAD
5
4
1
2
P
3
1
2
R
3
SOT-23/SOT-143 DC Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
2860
2862
2863
2864
2865
Test Conditions
Package
Marking
Code
T0
T2
T3
T4
T5
Lead
Code
0
2
3
4
5
Configuration
Single
Series Pair
[1,2]
Common Anode
[1,2]
Common Cathode
[1,2]
Unconnected Pair
[1,2]
Forward Voltage
V
F
(mV)
250 Min.
350 Max.
Typical
Capacitance
C
T
(pF)
0.30
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
SOT-323/SOT-363 DC Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
286B
286C
286E
286F
286K
286L
286P
286R
Test Conditions
Package
Marking
Code
T0
T2
T3
T4
TK
TL
TP
ZZ
Lead
Code
B
C
E
F
K
L
P
R
Configuration
Single
Series Pair
[1,2]
Common Anode
[1,2]
Common Cathode
[1,2]
High Isolation
Unconnected Pair
Unconnected Trio
Bridge Quad
Ring Quad
Forward Voltage
V
F
(mV)
250 Min.
350 Max.
Typical
Capacitance
C
T
(pF)
0.25
I
F
= 1.0 mA
V
R
= 0 V, f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
2
RF Electrical Specifications, T
C
= +25°C, Single Diode
Part
Number
HSMS-
2860
2862
2863
2864
2865
286B
286C
286E
286F
286K
286L
286P
286R
Test
Conditions
Typical Tangential Sensitivity
TSS (dBm) @ f =
915 MHz
2.45 GHz
5.8 GHz
– 57
–56
–55
Typical Voltage Sensitivity g
(mV/µW) @ f =
915 MHz
2.45 GHz
5.8 GHz
50
35
25
Typical Video
Resistance
RV (KΩ)
5.0
Video Bandwidth = 2 MHz
I
b
= 5 µA
Power in = –40 dBm
R
L
= 100 KΩ, I
b
= 5 µA
I
b
= 5 µA
Absolute Maximum Ratings, T
C
= +25°C, Single Diode
Symbol
P
IV
T
J
T
STG
T
OP
θ
jc
Parameter
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance
[2]
Unit
V
°C
°C
°C
°C/W
Absolute Maximum
[1]
SOT-23/143
SOT-323/363
4.0
150
‑65 to 150
‑65 to 150
500
4.0
150
‑65 to 150
‑65 to 150
150
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electro-
static Discharge Damage and Control.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is
made to the circuit board.
3
Equivalent Linear Circuit Model, Diode chip
R
j
R
S
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
(VJ)
P
T
(XTI)
M
Units
V
pF
eV
A
A
Ω
V
Value
7.0
0.18
0.69
1E‑5
5 E ‑8
1.08
6.0
0.65
2
0.5
C
j
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-286x product,
please refer to Application Note AN1124.
4
Typical Parameters, Single Diode
100
T A = –55°C
T A = +25°C
T A = +85°C
100
IF (left scale)
10
10000
R L = 100 KΩ
1000
FORWARD VOLTAGE DIFFERENCE(mV)
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
10
2.45 GHz
915 MHz
VOLTAGE OUT (mV)
100
10
1
0.1
-50
1
10
.1
VF (right scale)
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
-40
-30
-2 0
-1 0
0
POWER IN (dBm)
.01
0.1 0.2 0.3 0.4 0.5 0.6 0. 7 0.8 0.9 1.0
FORWARD VOLTAGE (V)
1
0.05
0.10
0.15
0.20
0.25
1
FORWARD VOLTAGE (V)
30
R L = 100 KΩ
10,000
915 MHz
1000
20
µA
10
µA
5
µA
100
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R L = 100 KΩ
40
35
10
2.45 GHz
OUTPUT VOLTAGE (mV)
VOLTAGE OUT (mV)
VOLTAGE OUT (mV)
30
25
20
15
10
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R L = 100 KΩ
.1
1
10
100
BIAS CURRENT (µA)
1
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
10
0.3
-50
-40
POWER IN (dBm)
-30
1
–40
–30
–20
–10
0
10
5
POWER IN (dBm)
5
