Shantou Huashan Electronic Devices Co.,Ltd.
HTP20A60
NON INSULATED TYPE TRIAC (TO-220 PACKAGE)
█
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(I
T(RMS)
=20A)
* High Commutation dv/dt
█
General Description
The Triac HTP20A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
█
Absolute Maximum Ratings
（T
a
=25℃）
T
stg
——Storage
Temperature…………………………………………………………………
-40~125℃
T
j
——Operating
Junction Temperature
……………………………………………………
-40~125℃
P
GM
——Peak
Gate Power Dissipation………………………………………………………………… 5W
V
DRM
——Repetitive
Peak Off-State Voltage………………………………………………………… 600V
I
T
（
RMS
）——R.M.S
On-state Current（Ta=90℃）………………………………………………… 20A
V
G M
— —
P e a k G a t e Vo l t a g e
… … … … … … … … … … … … … … … … … … … … … … … … …
1 0 V
I
GM
——
Peak Gate Current
……………………………………………………………
2.0A
I
TSM
——Surge
On-state Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………… 170/190A
█
Electrical Characteristics
（T
a
=25℃）
Symbol
I
DRM
Items
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current（Ⅰ）
Gate Trigger Current（Ⅱ）
Gate Trigger Current（Ⅲ）
Gate Trigger Voltage（Ⅰ）
Gate Trigger Voltage（Ⅱ）
Gate Trigger Voltage（Ⅲ）
Non-trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
Thermal Resistance
0.2
8
Min.
Typ.
Max.
2.0
Unit
mA
Conditions
V
D
=V
DRM
,Single
Phase,Half
V
TM
I+
GT1
I-
GT1
I-
GT3
V+
GT1
V-
GT1
V-
GT3
V
GD
(dv/dt)c
1.6
30
30
30
1.5
1.5
1.5
V
mA
mA
mA
V
V
V
V
V/µS
Wave, T
J
=125℃
I
T
=35A, Inst. Measurement
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
V
D
=6V, R
L
=10 ohm
T
J
=125℃,V
D
=1/2V
DRM
T
J
=125℃,V
D
=2/3V
DRM
(di/dt)c=-10A/ms
I
H
Rth(j-c)
25
1.4
mA
℃/W
Junction to case
Shantou Huashan Electronic Devices Co.,Ltd.
HTP20A60
Fig 2.
On-State Voltage
█
Performance Curves
Fig 1. Gate Characteristics
1
0.1
10
1
10
2
10
3
Gate
Current
(mA)
On-state Current [A]
10
Gate
Voltage (V)
On-State Voltage [V]
Fig 3. Gate Trigger Voltage vs. Junction
Temperature
Fig 4. On State Current vs. Maximum
Power Dissipation
Junction Temperature [℃]
Fig 5. On State Current vs.
Allowable Case Temperature
Power Dissipation [W]
RMS On-State Current [A]
Fig 6. Surge On-State Current Rating
( Non-Repetitive )
Allowable Case Temp. [°C]
Surge On-state Current [A]
RMS On-State Current [A]
Time（Cycles）
Shantou Huashan Electronic Devices Co.,Ltd.
HTP20A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
Transient Thermal
Junction Temperature [
℃]
Impedance
[℃/W ]
Time（sec）
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
