HiPerFAST
TM
IGBT with Diode
IXGK 60N60C2D1 V
CES
IXGX 60N60C2D1 I
C25
V
CE(sat)
C2-Class High Speed IGBTs
t
fi(typ)
= 600 V
= 75 A
= 2.5 V
= 35 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load @ V
CE
≤
600 V
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
60
48
300
I
CM
= 100
V
V
V
V
A
A
A
A
A
TO-264 AA
(IXGK)
(TAB)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C = Collector
Tab = Collector
480
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Mounting torque, TO-264
TO-264
PLUS247
1.13/10 Nm/lb.in.
10
6
300
g
g
°C
Features
•
Very high frequency IGBT and
anti-parallel FRED in one package
•
Square RBSOA
•
High current handling capability
•
MOS Gate turn-on for drive simplicity
•
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
RM
Applications
•
Switch-mode and resonant-mode
power supplies
•
Uninterruptible power supplies (UPS)
•
DC choppers
•
AC motor speed control
•
DC servo and robot drives
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
3.0
T
J
= 25°C
T
J
= 125°C
5.0
650
5
±100
T
J
= 25°C
T
J
= 125°C
2.1
1.8
2.5
V
μA
mA
nA
V
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
μA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50 A, V
GE
= 15 V
Note 1
Advantages
•
Space savings (two devices in one
package)
•
Easy to mount with 1 screw
© 2006 IXYS All rights reserved
DS99044B(11/05)
IXGK 60N60C2D1
IXGX 60N60C2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
40
58
3900
280
97
146
28
50
18
0.4
Inductive load, T
J
= 25°C
°
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Ω
25
95
35
0.48
18
25
0.9
130
80
1.2
0.8
150
S
pF
pF
pF
nC
nC
nC
ns
mJ
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Dim.
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 AA Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
E
on
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 50 A; V
CE
= 10 V, Note 1
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 125°C
°
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Ω
0.26 K/W
0.15
K/W
PLUS247 Outline
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Note 1: Pulse test, t
≤
300
μs,
duty cycle
≤
2 %
Test Conditions
I
F
= 60 A, V
GE
= 0 V,
Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.1
1.4
8.3
35
V
A
ns
0.65 K/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
T
J
= 150°C
I
F
= 60 A, V
GE
= 0 V, -di
F
/dt = 100 A/μ T
J
= 100°C
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
6,727,585
6,759,692
6771478 B2
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 1. Output Characteristics
@ 25ºC
100
90
80
70
V
GE
= 15V
13V
11V
300
270
240
210
11V
180
150
120
90
60
5V
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
30
0
0
2
4
6
8
10
12
14
16
7V
9V
V
GE
= 15V
13V
Fig. 2. Exteded Output Characteristics
@ 25ºC
I
C
- Amperes
60
50
40
30
20
10
0
7V
9V
I
C
-
Amperes
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125ºC
100
90
80
70
V
GE
= 15V
13V
11V
1.8
1.7
1.6
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
V
CE(sat)
- Normalized
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
C
= 50A
I
C
= 100A
I
C
- Amperes
60
50
40
30
20
10
0
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
9V
7V
5V
0.6
0.5
2.7
3
-50
-25
0
25
50
I
C
= 25A
2.4
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.0
4.5
4.0
T
J
= 25ºC
200
180
160
I
C
= 100A
50A
25A
140
Fig. 6. Input Admittance
I
C
-
Amperes
V
CE
- Volts
3.5
3.0
2.5
2.0
120
100
80
60
40
20
T
J
= 125ºC
25ºC
- 40ºC
1.5
5
6
7
8
9
10
11
12
13
14
15
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
V
GE
- Volts
V
GE
- Volts
© 2006 IXYS All rights reserved
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 8. Inductive Switching
Energy Loss vs. Gate Resistance
4.5
4.0
3.5
I
C
= 100A
4.5
4.0
3.5
3.0
E
off
V
CE
= 400V
I
C
= 50A
E
on
-
Fig. 7. Transconductance
80
T
J
= - 40ºC
70
60
25ºC
E - MilliJoule
off
g
f s
-
Siemen
50
125ºC
40
30
20
10
0
0
20
40
60
80
100
120
140
160
180
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2
3
4
5
6
7
8
9
10
I
C
= 25A
E- M
on
illiJoules
---
T
J
= 125ºC , V
GE
= 15V
2.5
2.0
1.5
1.0
0.5
0.0
I
C
- Am
peres
R
G
- Ohm
s
Fig. 9. Inductive Swiching
Energy Loss vs. Collector Current
3.5
3.0
2.5
E
off
V
CE
= 400V
T
J
= 125ºC
E
on
4.0
3.5
3.0
2.5
Fig. 10. Inductive Swiching
Energy Loss vs. Junction Temperature
4.0
E
off
V
CE
= 400V
E
on
----
----
R
G
= 2
Ω
,
V
GE
= 15V
3.5
3.0
I
C
= 100A
R
G
= 2
Ω
,
V
GE
= 15V
3.5
3.0
E - MilliJoule
off
E - MilliJoule
off
E- MilliJoules
on
E- MilliJoules
on
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
T
J
= 25ºC
1.0
0.5
0.0
100
2.0
1.5
1.0
0.5
0.0
I
C
= 25A
I
C
= 50A
2.5
2.0
1.5
1.0
0.5
0.0
125
-0.5
20
30
40
50
60
70
80
90
-0.5
25
35
45
55
65
75
85
95
105
115
I
C
- Am
peres
T
J
- Degrees Centigrade
Fig. 11. Inductive Turn-off
Switching Times vs. Gate Resistance
170
360
160
Fig. 12. Inductive Turn-off
Switching Times vs. Collector Current
210
t
f
160
150
V
CE
= 400V
t
d(off)
- - - -
330
300
140
120
t
f
V
CE
= 400V
t
d(off)
- - - -
190
170
T
J
= 125ºC
150
130
110
T
J
= 25ºC
90
70
100
T
J
= 125ºC, V
GE
= 15V
R
G
= 2
Ω
, V
GE
= 15V
- Nanoseconds
t
d(off)
- Nanoseconds
t
d(off)
t
f
- Nanosecon
140
130
120
110
100
90
2
3
4
5
6
7
8
9
10
I
C
= 25A, 50A, 100A
270
240
210
180
150
120
t
f
- Nanosecon
100
80
60
40
20
20
30
40
50
60
70
80
90
R
G
-
limits,
IXYS reserves the right to change
Ohms
test conditions, and dimensions.
I
C
- Am
peres
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 13. Inductive Turn-off
Switching Times vs. Junction Temperature
160
200
140
Fig. 14. Inductive Turn-on
Switching Times vs. Gate Resistance
43
t
f
140
120
V
CE
= 400V
t
d(off)
- - - -
180
160
I
C
= 100A, 50A, 25A
140
120
100
80
60
125
120
100
t
r
V
CE
= 400V
t
d(on)
- - - -
40
37
I
C
= 100A
34
31
I
C
= 50A
28
25
I
C
= 25A
22
R
G
= 2Ω , V
GE
= 15V
T
J
= 125ºC, V
GE
= 15V
- Nanoseconds
t
d(off)
t
d(on)
- Nanoseconds
t
f
- Nanosecon
t
r
- Nanosecon
100
80
60
40
20
25
35
45
55
65
75
85
95
105
115
80
60
40
20
0
2
3
4
5
6
7
8
9
10
T
J
- Degrees Centigrade
R
G
- Ohm
s
Fig. 15. Inductive Turn-on
Switching Times vs. Collector Current
80
30.5
80
70
60
Fig. 16. Inductive Turn-on
Switching Times vs. Junction Temperature
34
t
r
70
60
V
CE
= 400V
t
d(on)
- - - -
T
J
= 25ºC, 125ºC
R
G
= 2Ω , V
GE
= 15V
29.0
27.5
26.0
24.5
23.0
21.5
20.0
100
t
r
t
d(on)
- - - -
I
C
= 100A
32
30
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
t
r
- Nanosecon
t
r
- Nanosecon
t
d(on)
-
t
d(on)
-
50
40
I
C
= 50A
30
20
10
0
25
35
45
55
65
75
85
95
105
115
I
C
= 25A
28
26
24
22
20
18
125
50
40
30
20
10
20
30
40
50
60
70
80
90
I
C
- Am
peres
T
J
- Degrees Centigrade
Fig. 17. Gate Charge
16
14
12
V
CE
= 300V
I
C
= 50A
10,000
Fig. 18. Capacitance
Cies
Capacitance - PicoFar
I
G
= 10 mA
1,000
V - Volts
GE
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
Coes
100
Cres
f = 1 MH
z
10
0
5
10
15
20
25
30
35
40
Q
G
- NanoCoulom
bs
V
CE
- Volts
© 2006 IXYS All rights reserved
