HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
DESCRIPTION
KEY FEATURES
High Power Stud Mount Package.
High Zero Bias Impedance
Very Low Inductance and
Capacitance.
No Internal Lead Straps.
Small Mechanical Outline.
APPLICATIONS/BENEFITS
MRI Applications.
High Power Antenna Switching.
VOLTAGE RATING [25°C]
Reverse
Voltage
(V
R
) – Volts
I
R
= 10µA
100V
Part type
WWW .
Microsemi
.C
OM
With high isolation, low loss, and low distortion characteristics, this
Microsemi Power PIN diode is perfect for the high power switching
applications where size and power handling capability are critical.
Its advantages also include the low forward bias resistance and high zero
bias impedance that are essential for low loss, high isolation and wide
bandwidth performance.
Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical
bonds on both sides to achieve high reliability and high surge capability.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
HUM2001
HUM2005
HUM2010
HUM2015
HUM2020
Style “D”
Insulated Stud
Style “C”
Stud
Style “B”
Round Axial Leads
Style “SM”
Melf
500V
1000V
1500V
2000V
Maximum Ratings @ 25ºC
(UNLESS OTHERWISE SPECIFIED)
Parameter
Maximum Reverse
Voltage
Average Power
Dissipation
@ Stud =50°C
Non-Repetitive
Sinusoidal Surge
Current (8.3 ms)
Storage
Temperature
Range
Operating
Temperature
Range
Thermal resistance
Junction-to Case
“C” Stud only
Symbol
T
RWM
I
O
I
T
STG
T
STG
R
θ
JC
HUM2001
100
13
100
-65 to
+175
-55 to
+150
7.5
HUM2005
500
13
100
-65 to
+175
-55 to
+150
7.5
TYPE
HUM2010
HUM2015
1000
13
100
-65 to
+175
-55 to
+150
7.5
1500
13
100
-65 to
+175
-55 to
+150
7.5
HUM2020
2000
13
100
-65 to
+175
-55 to
+150
7.5
Unit
V
W
A
°C
HUM2010-2020
HUM2010-2020
°C
°C/W
Copyright
2000
MSCXXXX.PDF 2002-08-08
Microsemi
Page 1
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
Parameter
Diode Resistance
Capacitance C
T
Reverse Current
Carrier Lifetime
Parallel Resistance
Forward Voltage
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Symbol
Conditions
Min
Typ.
R
S
C
T
I
R
τ
R
P
Vf
F= 4 MHz, If = 0.5 A
F= 1 MHz, 100 V
V
R
@ Rated Voltage
If
= 10 mA/ 100 V
F= 10 MHz, 100 V
If = 0.5 A
0.10
3.4
10
200
30
0.85
WWW .
Microsemi
.C
OM
Max
0.20
4.0
10
Units
Ω
pF
µA
µs
kΩ
V
1.0
HUM2010, 15, 20
TYPICAL
101
16
HUM2010, 15, 20
TYPICAL
12
Rs @ 4 MHz (Ohms)
Ct @ 1 MHz (pF)
100
8
10-1
4
10-2
100
101
102
103
0
-1
10
10
0
10
1
10
2
If (mA)
Vr (V)
HUM2010, 15, 20
TYPICAL
10
1
HUM2010, 15, 20
TYPICAL
10
6
1 MHz
10
0
105
4
If (A)
10
10
-1
Rp (KOhms)
10
3
10
-2
102
101
100 MHz
ELECTRICALS
ELECTRICALS
-3
10
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Vf (V)
10
0
0
10
20
30
40
50
60
70
80
90
100
Vr (V)
Copyright
2000
MSCXXXX.PDF 2002-08-08
Microsemi
Page 2
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
STYLE “C” STUD
WWW .
Microsemi
.C
OM
STYLE “D” INSULATED STUD
PACKAGE DATA
PACKAGE DATA
Copyright
2000
MSCXXXX.PDF 2002-08-08
Microsemi
Page 3
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
STYLE “SM” MELF
WWW .
Microsemi
.C
OM
STYLE “B” ROUND AXIAL LEADS
PACKAGE DATA
Note: Add Style Letter to Suffix of Part Number to Define Device Configuration,
Example: (i.e. HUM2001 C)
Copyright
2000
MSCXXXX.PDF 2002-08-08
Microsemi
Page 4
HUM2001/HUM2020 SERIES
Pin Diode High Power Stud
PRODUCT PREVIEW/PRELIMINARY
WWW .
Microsemi
.C
OM
NOTES
NOTES
Copyright
2000
MSCXXXX.PDF 2002-08-08
Microsemi
Page 5
