HWC27YC
C-Band Power FET Via Hole Chip
Autumn 2002
V1
Features
•
•
•
•
Outline Dimensions
650
Low Cost GaAs Power FET
Class A or Class AB Operation
18 dB Typical Gain at 2.4GHz
5V to 10V Operation
Source
435
1
3
Description
The HWC27YC is a medium power GaAs FET
designed for various RF and microwave
applications.
215
2
4
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
Source
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
2mA
175
°
C
-65 to +175
°
C
3.5W
0.0
0.0 58.5
344.5 400
Unit:
µm
Thickness: 50
±
5
Chip size
±
50
Bond Pads 1-2 (Gate):
Bond Pads 3-4 (Drain):
60 x 60
60 x 60
* mounted on an infinite heat sink
Electrical Specifications
(T
A
=25
°
C) f = 2.4 GHz for all RF Tests
Symbol
I
DSS
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Units
mA
Min.
300
Typ.
400
Max.
600
V
P
Pinch-off Voltage at V
DS
=3V, I
D
=20mA
V
-3.5
-2.0
-1.5
g
m
P
1dB
Transconductance at V
DS
=3V, I
D
=200mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
mS
-
250
-
dBm
27
28
-
G
1dB
dB
16
17
-
PAE
%
-
40
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWC27YC
C-Band Power FET Via Hole Chip
Autumn 2002
V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
V
DS
=10V, I
DS
=0.5I
DSS
(GHz)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
lS11l
0.912
0.906
0.900
0.900
0.899
0.901
0.903
0.907
0.910
0.911
0.911
0.915
0.919
0.918
0.917
0.916
0.914
ANG
-118.90
-128.90
-138.90
-144.50
-150.20
-153.70
-157.20
-159.90
-162.50
-164.20
-165.80
-167.20
-168.50
-169.90
-171.40
-172.00
-172.60
lS21l
5.295
4.540
3.784
3.335
2.886
2.585
2.284
2.072
1.860
1.696
1.533
1.413
1.293
1.200
1.107
1.037
0.966
ANG
104.40
95.77
87.16
80.57
73.98
68.26
62.54
57.40
52.26
47.77
43.27
39.22
35.17
31.33
27.50
24.27
21.04
lS12l
0.024
0.025
0.026
0.026
0.025
0.025
0.024
0.024
0.023
0.023
0.022
0.022
0.021
0.022
0.022
0.022
0.022
ANG
35.50
31.08
26.65
25.72
24.78
25.24
25.70
26.84
27.98
29.32
30.66
32.61
34.55
37.37
40.20
41.37
42.54
lS22l
0.413
0.409
0.404
0.410
0.416
0.429
0.441
0.468
0.495
0.521
0.547
0.573
0.598
0.626
0.654
0.671
0.688
ANG
-35.82
-42.72
-49.62
-56.64
-63.65
-70.99
-78.33
-84.84
-91.35
-95.72
-100.10
-103.80
-107.60
-110.00
-112.50
-114.00
-115.60
Bonding Manner
Gate, drain pad: 1 wire on each pad
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
