HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Features
•
•
Outline Dimensions
Plastic Packaged GaAs Power FET
Suitable for Commercial Wireless
Applications
High Efficiency
3V Operation
2
3
1
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
•
•
Description
The HWL27NPB is a medium Power GaAs FET using
surface mount type plastic package for various L-Band
applications.
It is suitable for various 900 MHz, 1900
MHz cellular/wireless applications.
Absolute Maximum Ratings
V
DS
VGS
ID
IG
TCH
TSTG
PT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+7V
-5V
I
DSS
2mA
150
°
C
-65 to +150
°
C
0.7W
PB Package (SOT-23)
Electrical Specifications
(T
A
=25
°
C) f=1900 MHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Pinch-off Voltage at V
DS
=3V, I
D
=20mA
Transconductance at V
DS
=3V, I
D
=200mA
Thermal Resistance
Power Output at Test Points
V
DS
=3V, I
D
=0.5I
DSS
Gain at 1dB Compression Point
V
DS
=3V, I
D
=0.5I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=3V, I
D
=0.5I
DSS
Units
mA
V
mS
°
C/W
Min.
300
-3.5
-
-
Typ.
400
-2.0
220
45
Max.
-
-1.5
-
-
g
m
R
th
P
1dB
dBm
22.5
24.5
-
G
1dB
dB
8.0
-
PAE
%
40.0
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25°C
°
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=3V
Po (dBm)
25
20
15
30
10
Gain
5
0
-8
-4
0
4
8
12
20
10
0
Pin (dBm)
PAE (%)
60
50
40
Po
Gain
Eff
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=3V
Po (dBm)
30
25
20
15
Gain
10
5
0
0
5
10
15
20
PAE (%)
60
50
40
30
20
10
0
Pin (dBm)
Po
Gain
Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=200mA
Po (dBm)
30
25
20
15
Gain
10
5
0
0.7
0.8
0.9
1.0
20
10
0
1.1 f (GHz)
PAE (%)
60
50
40
30
Po
Gain
PAE
Power Derating Curve
Total Power Dissipation,P
T
(W)
1
(25,0.7)
(150,0)
0
0
50
100
150
225
Case Temperature,T
C
(℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
HWL27NPB
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
V
DS
=3V, I
DS
=0.5I
DSS
(GHz)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
lS11l
0.782
0.743
0.741
0.704
0.692
0.690
0.668
0.663
0.655
0.650
0.642
0.638
0.632
0.630
0.632
0.626
0.624
0.615
0.621
0.617
0.619
0.611
0.608
0.604
0.605
0.594
0.595
0.596
0.586
0.591
0.585
0.579
0.573
0.563
0.559
0.553
∠
ANG
-80.72
-92.29
-104.32
-114.72
-123.90
-132.50
-141.17
-148.35
-155.54
-161.95
-168.50
-174.31
179.77
174.55
169.05
163.68
159.10
153.93
149.48
144.89
140.97
136.20
132.33
128.49
124.44
120.30
116.61
112.03
108.46
103.89
99.90
95.08
91.24
86.73
83.08
78.88
lS21l
8.369
7.733
7.190
6.681
6.228
5.824
5.452
5.108
4.808
4.560
4.305
4.093
3.894
3.723
3.555
3.404
3.260
3.127
3.015
2.909
2.810
2.716
2.633
2.558
2.489
2.420
2.359
2.295
2.250
2.207
2.163
2.114
2.072
2.028
1.998
1.957
∠
ANG
121.65
113.66
105.78
98.92
91.84
85.20
79.37
73.58
68.05
62.71
57.61
52.44
47.53
42.88
38.20
33.61
28.94
24.65
20.37
16.20
12.19
8.04
3.90
-0.14
-4.19
-8.26
-12.37
-16.34
-20.12
-24.16
-28.20
-32.27
-36.20
-40.20
-44.27
-48.11
lS12l
0.033
0.039
0.044
0.048
0.053
0.058
0.062
0.066
0.071
0.075
0.081
0.084
0.089
0.093
0.098
0.103
0.107
0.111
0.116
0.121
0.126
0.131
0.136
0.141
0.146
0.152
0.156
0.160
0.165
0.170
0.175
0.180
0.187
0.191
0.197
0.203
∠
ANG
63.29
59.29
56.19
53.99
50.64
47.76
45.25
43.04
39.79
37.29
35.25
32.74
29.69
26.86
24.77
21.74
19.28
16.85
14.41
11.64
8.30
6.34
3.09
0.40
-1.90
-5.07
-8.08
-11.11
-13.83
-17.07
-19.48
-22.19
-25.09
-28.00
-31.12
-34.36
lS22l
0.077
0.080
0.090
0.093
0.101
0.105
0.113
0.115
0.121
0.112
0.129
0.120
0.130
0.120
0.137
0.142
0.138
0.150
0.150
0.153
0.154
0.159
0.155
0.157
0.163
0.157
0.158
0.184
0.166
0.173
0.172
0.186
0.177
0.181
0.171
0.166
∠
ANG
-158.85
-157.76
-166.06
-167.17
-168.56
-173.75
179.21
177.13
176.36
167.41
165.74
160.75
160.23
153.45
145.65
148.58
139.67
139.18
135.43
138.27
130.48
131.47
126.60
123.67
123.15
124.45
115.85
117.43
118.10
111.63
112.13
108.13
111.32
108.09
107.08
108.36
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
Email:
sales@hw.com.tw
All specifications are subject to change without notice.
