HY57V641620HG(L)TP
4 Banks x 1M x 16Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V641620HG(L)TP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications
which require large memory density and high bandwidth. HY57V641620HG(L)TP is organized as 4banks of 1,048,576x16.
HY57V641620HG(L)TP is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input
and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
•
•
•
Single 3.3±0.3V power supply
Note)
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
pitch
All inputs and outputs referenced to positive edge of system
clock
Data mask function by UDQM or LDQM
Internal four banks operation
•
•
•
•
•
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
Package Type: 54Pin TSOPII(Lead Free)
•
•
•
ORDERING INFORMATION
Part No.
HY57V641620HGTP-5/55/6/7
HY57V641620HGTP-K
HY57V641620HGTP-H
HY57V641620HGTP-8
HY57V641620HGTP-P
HY57V641620HGTP-S
HY57V641620HGLTP-5/55/6/7
HY57V641620HGLTP-K
HY57V641620HGLTP-H
HY57V641620HGLTP-8
HY57V641620HGLTP-P
HY57V641620HGLTP-S
Clock Frequency
200/183/166/143MHz
133MHz
133MHz
125MHz
100MHz
100MHz
200/183/166/143MHz
133MHz
133MHz
125MHz
100MHz
100MHz
Power
Organization
Interface
Package
Normal
4Banks x 1Mbits x16
LVTTL
400mil 54pin TSOP II
(Lead or Lead Free)
Low
power
Note : VDD(Min) of HY57V641620HG(L)TP-5/55/6 is 3.135V
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.9 / Mar. 2004
1
HY57V641620HG(L)TP
PIN CONFIGURATION
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
/WE
/CAS
/RAS
/CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
54pin TSOP II
400mil x 875mil
0.8mm pin pitch
PIN DESCRIPTION
PIN
CLK
CKE
CS
BA0,BA1
A0 ~ A11
Clock
Clock Enable
Chip Select
Bank Address
Address
Row Address Strobe,
Column Address Strobe, Write
Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
No Connection
PIN NAME
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the rising
edge of CLK
Controls internal clock signal and when deactivated, the SDRAM will be one of the
states among power down, suspend or self refresh
Enables or disables all inputs except CLK, CKE and DQM
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
RAS, CAS and WE define the operation
Refer function truth table for details
Controls output buffers in read mode and masks input data in write mode
Multiplexed data input / output pin
Power supply for internal circuits and input buffers
Power supply for output buffers
No connection
RAS, CAS, WE
LDQM, UDQM
DQ0 ~ DQ15
V
DD
/V
SS
V
DDQ
/V
SSQ
NC
Rev. 0.9 / Mar. 2004
2
HY57V641620HG(L)TP
FUNCTIONAL BLOCK DIAGRAM
1Mbit x 4banks x 16 I/O Synchronous DRAM
Self refresh logic
& timer
Internal Row
counter
CLK
Row active
1Mx16 Bank 3
Row
Pre
Decoders
1Mx16 Bank 2
X decoders
1Mx16 Bank 1
X decoders
1Mx16 Bank 0
X decoders
DQ0
DQ1
I/O Buffer & Logic
Sense AMP & I/O Gate
CKE
CS
RAS
CAS
WE
UDQM
LDQM
State Machine
Address buffers
X decoders
refresh
Column
Active
Memory
Cell
Array
Column
Pre
Decoders
Y decoders
DQ14
DQ15
Bank Select
Column Add
Counter
A0
A1
Address
Registers
Burst
Counter
A11
BA0
BA1
Mode Registers
CAS Latency
Data Out Control
Pipe Line Control
Rev. 0.9 / Mar. 2004
3
HY57V641620HG(L)TP
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
°C
°C
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on V
DD
relative to V
SS
Short Circuit Output Current
Power Dissipation
Soldering Temperature
⋅
Time
T
A
T
STG
V
IN
, V
OUT
V
DD,
V
DDQ
I
OS
P
D
T
SOLDER
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260
⋅
10
V
V
mA
W
°C ⋅
Sec
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION
(TA=0 to 70
°C
)
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
DD
, V
DDQ
V
IH
V
IL
3.0
2.0
V
SSQ
- 2.0
3.3
3.0
0
3.6
V
DDQ
+ 2.0
0.8
V
V
V
1,2
1,3
1,4
Note :
1.All voltages are referenced to V
SS
= 0V
2.VDD(min) of HY57V641620HG(L)T(P)-5/55/6 is 3.135V
3.V
IH
(max) is acceptable 5.6V AC pulse width with
≤
3ns of duration
4.V
IL
(min) is acceptable -2.0V AC pulse width with
≤
3ns of duration
AC OPERATING CONDITION
(TA=0 to 70
°C
, V
DD
=3.3
±
0.3V
Note2
, V
SS
=0V)
Parameter
Symbol
Value
Unit
Note
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level
Output Load Capacitance for Access Time Measurement
V
IH
/ V
IL
Vtrip
tR / tF
Voutref
CL
2.4/0.4
1.4
1
1.4
50
V
V
ns
V
pF
1
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
2.VDD(min) of HY57V641620HG(L)TP-5/55/6 is 3.135V
Rev. 0.9 / Mar. 2004
4
HY57V641620HG(L)TP
CAPACITANCE
(TA=25
°C
, f=1MHz)
Parameter
Pin
Symbol
Min
Max
Unit
Input capacitance
CLK
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS,
WE, UDQM, LDQM
C
I1
CI
2
C
I/O
2
2.5
2
4
5
6.5
pF
pF
pF
Data input / output capacitance
DQ0 ~ DQ15
OUTPUT LOAD CIRCUIT
Vtt=1.4V
RT=250
Ω
Output
50pF
Output
50pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I
(TA=0 to 70
°C
, V
DD
=3.3
±
0.3V
Note3
)
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
I
LI
I
LO
V
OH
V
OL
-1
-1
2.4
-
1
1
-
0.4
uA
uA
V
V
1
2
I
OH
= -4mA
I
OL
= +4mA
Note :
1.V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V
2.D
OUT
is disabled, V
OUT
=0 to 3.6
Rev. 0.9 / Mar. 2004
5
