DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, FBGA-60
厂商名称:SK Hynix(海力士)
厂商官网:http://www.hynix.com/eng/
下载文档型号 | HY5DU561622CLF-M | HY5DU561622CF-M | HY5DU56822CLF-M | HY5DU56422CF-M | HY5DU56822CF-M |
---|---|---|---|---|---|
描述 | DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA |
包装说明 | TBGA, BGA60,9X12,40/32 | TBGA, BGA60,9X12,40/32 | TBGA, BGA60,9X12,40/32 | TBGA, BGA60,9X12,40/32 | TBGA, BGA60,9X12,40/32 |
针数 | 60 | 60 | 60 | 60 | 60 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 133 MHz | 133 MHz | 133 MHz | 133 MHz | 133 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
JESD-30 代码 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 |
长度 | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm |
内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 16 | 16 | 8 | 4 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 60 | 60 | 60 | 60 | 60 |
字数 | 16777216 words | 16777216 words | 33554432 words | 67108864 words | 33554432 words |
字数代码 | 16000000 | 16000000 | 32000000 | 64000000 | 32000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 16MX16 | 16MX16 | 32MX8 | 64MX4 | 32MX8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TBGA | TBGA | TBGA | TBGA | TBGA |
封装等效代码 | BGA60,9X12,40/32 | BGA60,9X12,40/32 | BGA60,9X12,40/32 | BGA60,9X12,40/32 | BGA60,9X12,40/32 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE | GRID ARRAY, THIN PROFILE |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 |
座面最大高度 | 1.17 mm | 1.17 mm | 1.17 mm | 1.17 mm | 1.17 mm |
自我刷新 | YES | YES | YES | YES | YES |
连续突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
最大待机电流 | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
最大压摆率 | 0.27 mA | 0.27 mA | 0.27 mA | 0.27 mA | 0.27 mA |
最大供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
最小供电电压 (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
厂商名称 | SK Hynix(海力士) | - | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |