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HY628100ALLG

128Kx8bit CMOS SRAM

厂商名称:SK Hynix(海力士)

厂商官网:http://www.hynix.com/eng/

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HY628100A Series
128Kx8bit CMOS SRAM
DESCRIPTION
The HY628100A is a high speed, low power and
1M bit CMOS Static Random Access Memory
organized as 131,072 words by 8bit. The
HY628100A uses high performance CMOS
process technology and designed for high speed
low power circuit technology. It is particulary well
suited for used in high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 2.0V.
Product
Voltage
Speed
Operation
No
(V)
(ns)
Current(mA)
HY628100A
5.0
55/70/85
10
Comment : 50ns is available with 30pF test load.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(L/LL-part)
- 2.0V(min) data retention
Standard pin configuration
- 32pin 525mil SOP
- 32pin 8x20mm TSOP-I(Standard)
Standby Current(uA)
L
LL
1mA
100
20
Temperature
(°C)
0~70
PIN CONNECTION
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CS2
/WE
A13
A8
A9
A11
/OE
A10
/CS1
I/O8
I/O7
I/O6
I/O5
I/O4
A11
A9
A13
/WE
CS2
A15
Vcc
NC
A16
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
11
12
13
14
15
16
32
30
29
28
27
26
25
24
22
21
20
19
18
17
/OE
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ1
A0
A1
A2
A3
SOP
TSOP-I(Standard)
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
A0 ~ A16
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Address Input
Data Input/Output
Power(5.0V)
Ground
BLOCK DIAGRAM
SENSE AMP
A0
ADD INPUT BUFFER
COLUMN DECODER
ROW DECODER
I/O1
OUTPUT BUFFER
I/O8
A16
CONTROL
LOGIC
/CS1
CS2
/OE
/WE
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.05 /Feb.99
Hyundai Semiconductor
WRITE DRIVER
MEMORY ARRAY
1024x1024
HY628100A Series
ORDERING INFORMATION
Part No.
Speed
Power
HY628100AG
55/70/85
HY628100ALG
55/70/85
L-part
HY628100ALLG
55/70/85
LL-part
HY628100AT1
55/70/85
HY628100ALT1
55/70/85
L-part
HY628100ALLT1
55/70/85
LL-part
Comment : 50ns is available with 30pF test load.
Temp
Package
SOP
SOP
SOP
TSOP-I(Standard)
TSOP-I(Standard)
TSOP-I(Standard)
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
T
STG
P
D
I
OUT
T
SOLDER
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Rating
-0.5 to 7.0
0 to 70
-65 to 125
1.0
50
260
•10
Unit
V
°C
°C
W
mA
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliablity.
RECOMMENDED DC OPERATING CONDITION
T
A
=0°C to 700°C /-400°C to 85°C
Symbol
Parameter
Min.
Vcc
Supply Voltage
4.5
Vss
Ground
0
V
IH
Input High Voltage
2.2
V
IL
Input Low Voltage
-0.5
(1)
Note :
1. V
IL
= -3.0V for pulse width less than 30ns
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+0.5
0.8
Unit
V
V
V
V
TRUTH TABLE
/CS1
H
X
L
L
L
CS2
X
L
H
H
H
/WE
X
X
H
H
L
/OE
X
X
H
L
X
MODE
Standby
Output Disabled
Read
Write
I/O OPERATION
High-Z
High-Z
High-Z
Data Out
Data In
Note :
1. H=V
IH
, L=V
IL
, X=don't care
Rev.05 /Feb.99
2
HY628100A Series
DC ELECTRICAL CHARACTERISTICS
Vcc = 5.0V±10%, T
A
= 0°C to 70°C, unless otherwise specified
Symbol
Parameter
Test Condition
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS1 = V
IH
or
CS2 = V
IL
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
/CS1 = V
IL
, CS2 = V
IH,
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating
/CS1 = V
IL
CS2 = V
IH,
Current
Min Duty Cycle = 100%, I
I/O =
0mA
I
SB
TTL Standby Current
/CS1 = V
IH
or CS2 = V
IL
(TTL Input)
I
SB1
Standby Current
/CS1 > Vcc - 0.2V
(CMOS Input)
CS2 > 0.2V or
L
CS2 > Vcc - 0.2V
LL
V
OL
Output Low Voltage
I
OL
= 2.1Ma
V
OH
Output High Voltage
I
OH =
-1mA
Note : Typical values are at Vcc = 5.0V, T
A
= 25°C
Min.
-1
-1
-
-
-
-
-
-
-
2.4
Typ.
-
-
5
30
1
-
2
1
-
-
Max.
1
1
10
50
2
1
100
20
0.4
-
Unit
uA
uA
mA
mA
mA
mA
uA
uA
V
V
AC CHARACTERISTICS
Vcc = 5.0V±10%, T
A
= 0°C to 70°C (Normal), unless otherwise specified
-55
-70
# Symbol
Parameter
Min.
Max. Min.
Max.
READ CYCLE
1
TRC
Read Cycle Time
55
-
70
-
2
tAA*
Address Access Time
-
55
-
70
3
tACS* Chip Select Access Time
-
55
-
70
4
TOE
Output Enable to Output Valid
-
25
-
35
5
TCLZ
Chip Select to Output in Low Z
10
-
10
-
6
TOLZ
Output Enable to Output in Low Z
5
-
5
-
7
tCHZ
Chip Deselection to Output in High Z
0
20
0
25
8
tOHZ
Out Disable to Output in High Z
0
20
0
25
9
tOH
Output Hold from Address Change
10
-
10
-
WRITE CYCLE
10 tWC
Write Cycle Time
55
-
70
-
11 tCW
Chip Selection to End of Write
45
-
60
-
12 tAW
Address Valid to End of Write
45
-
60
-
13 tAS
Address Set-up Time
0
-
0
-
14 tWP
Write Pulse Width
40
-
50
-
15 tWR
Write Recovery Time
0
-
0
-
16 tWHZ
Write to Output in High Z
0
20
0
25
17 tDW
Data to Write Time Overlap
25
-
30
-
18 tDH
Data Hold from Write Time
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
Comment : tAA* and tACS* can meet 50ns with 30pF test load.
-85
Min
Max.
85
-
-
-
10
5
0
0
10
85
70
70
0
55
0
0
35
0
5
-
85
85
45
-
-
30
30
-
-
-
-
-
-
-
30
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev.05 /Feb.99
3
HY628100A Series
AC TEST CONDITIONS
T
A
= 0°C to 70°C (Normal), unless otherwise specified
PARAMETER
Value
Input Pulse Level
0.8V to 2.4V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
CL = 100pF + 1TTL Load
CL* = 30pF + 1TTL Load
Comment
* : Test load is 30pF for 50ns
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
CAPACITANCE
Temp = 25°C, f= 1.0MHz
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output Capacitance
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
6
8
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.05 /Feb.99
4
HY628100A Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
tAA
OE
tOE
tOLZ
CS1
tOH
CS2
tACS
tCLZ
Data
Out
High-Z
Data Valid
tOHZ
tCHZ
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are
not referenced to output voltage levels
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given
device and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
Data
Out
Previous Data
Data Valid
tOH
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS1 = V
IL,
CS2
=
V
IH.
3. /OE =V
IL
.
Rev.05 /Feb.99
5
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参数对比
与HY628100ALLG相近的元器件有:HY628100A、HY628100AG、HY628100ALG、HY628100ALLT1、HY628100ALT1、HY628100AT1。描述及对比如下:
型号 HY628100ALLG HY628100A HY628100AG HY628100ALG HY628100ALLT1 HY628100ALT1 HY628100AT1
描述 128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM
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