Y62UF16200/ HY62QF16200/ HY62EF16200/
HY62SF16200 Series
128Kx16bit full CMOS SRAM
DESCRIPTION
The
HY62UF16200
/
HY62QF16200
/
HY62EF16200 / HY62SF16200 is a high speed,
super low power and 2M bit full CMOS SRAM
organized as 131,072 words by 16bits. The
HY62UF16200 / HY62QF16200 / HY62EF16200 /
HY62SF16200 uses high performance full CMOS
process technology and is designed for high
speed and low power circuit technology. It is
particularly well-suited for the high density low
power system application. This device has a data
retention mode that guarantees data to remain
valid at a minimum power supply voltage of 1.5V.
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup(LL/SL-part)
- 1.5V(min) data retention
•
Standard pin configuration
- 48ball uBGA
Product
Voltage
Speed
Operation
Standby Current(uA)
No.
(V)
(ns)
Current(mA)
LL
SL
HY62UF16200
3.0
70/85/100
15
10
2
HY62UF16200-I
3.0
70/85/100
15
10
2
HY62QF16200
2.5
85/100/120
10
10
2
HY62QF16200-I
2.5
85/100/120
10
10
2
HY62EF16200
2.0
100/120/150
10
10
2
HY62EF16200-I
2.0
100/120/150
10
10
2
HY62SF16200
1.8
120/150/200
10
10
2
HY62SF16200-I
1.8
120/150/200
10
10
2
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
Temperature
(°C)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
PIN CONNECTION
(Top View )
/LB
/OE A0
A1
A4
A6
A7
A2
NC
A0
BLOCK DIAGRAM
SENSE AMP
ROW
DECODER
I/O1
OUTPUT BUFFER
ADD INPUT BUFFER
IO9 /UB A3
IO10 IO11 A5
Vss IO12 NC
Vcc IO13 NC
/CS IO1
IO2 IO3
IO4 Vcc
DECODER
I/O8
MEMORY ARRAY
1024x128x16
WRITE DRIVER
I/O9
A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
A16
/CS
/OE
/LB
/UB
/WE
I/O16
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Funtion
Chip Select
Write Enable
Output Enable
Low Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A16
Vcc
Vss
NC
Pin Funtion
Data Input/Output
Address Input
Power(3.0V/2.5V/2.0V/1.8V)
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Feb.99
Hyundai Semiconductor
HY62UF16200/HY62QF16200/HY62EF16200/HY62SF16200 Series
ORDERING INFORMATION
Part No.
HY62UF16200LLM
HY62UF16200SLM
HY62UF16200LLM-I
HY62UF16200SLM-I
HY62QF16200LLM
HY62QF16200SLM
HY62QF16200LLM-I
HY62QF16200SLM-I
HY62EF16200LLM
HY62EF16200SLM
HY62EF16200LLM-I
HY62EF16200SLM-I
HY62SF16200LLM
HY62SF16200SLM
HY62SF16200LLM-I
HY62SF16200SLM-I
Speed
70/85/100
70/85/100
70/85/100
70/85/100
85/100/120
85/100/120
85/100/120
85/100/120
100/120/150
100/120/150
100/120/150
100/120/150
120/150/200
120/150/200
120/150/200
120/150/200
Power
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
LL-part
SL-part
Temp.
Package
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
uBGA
E.T.
E.T.
E.T.
E.T.
E.T.
E.T.
E.T.
E.T.
Note 1. E.T. : Extended Temperature, Blank : Normal Temperature
ABSOLUTE MAXIMUM RATING (1)
Symbol
V
IN,
V
OUT
Vcc
T
A
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Rating
-0.2 to 3.6
-0.2 to 4.0
0 to 70
Unit
V
V
°C
Remark
-40 to 85
°C
HY62UF16200
HY62QF16200
HY62EF16200
HY62SF16200
HY62UF16200-I
HY62QF16200-I
HY62EF16200-I
HY62SF16200-I
T
STG
P
D
T
SOLDER
Storage Temperature
Power Dissipation
Lead Soldering Temperature & Time
-55 to 150
1.0
260
•
5
°C
W
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Rev.04 /Feb.99
2
HY62UF16200/HY62QF16200/HY62EF16200/HY62SF16200 Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Parameter
Supply Voltage
Product
HY62UF16200-(I)
HY62QF16200-(I)
HY62EF16200-(I)
HY62SF16200-(I)
HY62UF16200-(I)
HY62QF16200-(I)
HY62EF16200-(I)
HY62SF16200-(I)
HY62UF16200-(I)
HY62QF16200-(I)
HY62EF16200-(I)
HY62SF16200-(I)
HY62UF16200-(I)
HY62QF16200-(I)
HY62EF16200-(I)
HY62SF16200-(I)
Min.
2.7
2.2
1.8
1.6
0
Typ.
3.0
2.5
2.0
1.8
0
Max.
3.3
2.8
2.2
2.0
0
Unit
V
V
V
V
Vss
Ground
V
IH
Input High Voltage
V
IL
Input Low Voltage
2.2
2.0
1.6
1.4
-0.2
(1)
-
-
-
-
Vcc+0.2
Vcc+0.2
Vcc+0.2
Vcc+0.2
0.4
V
V
V
V
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
TRUTH TABLE
/CS
H
L
L
L
/WE
X
H
X
H
/OE
X
H
X
L
/LB
X
X
H
L
H
L
L
H
L
/UB
X
X
H
H
L
L
H
L
L
Mode
Not Selected
Output Disabled
Read
I/O Pin
I/O1~I/O8
I/O9~I/O16
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
OUT
Hi-Z
Hi-Z
D
OUT
D
OUT
D
OUT
D
IN
Hi-Z
Hi-Z
D
IN
D
IN
D
IN
Supply Current
I
SB
, I
SB1
Icc
Icc
L
L
X
Write
Icc
Note:
1. H=V
IH
, L=V
IL
, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Rev.04 /Feb.99
3
HY62UF16200/HY62QF16200/HY62EF16200/HY62SF16200 Series
DC ELECTRICAL CHARACTERISTICS
Vcc = 3.0V±10%/2.5V±10%/2.0V±10%/1.8V±10%, T
A
= 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.)
Sym
Parameter
Test Condition
Min.
Typ.
Max.
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
-1
-
1
/
OE
=
V
IH
or /WE = V
IL
/
UB
=
V
IH
or /LB = V
IH
Icc
Operating Power Supply
/CS = V
IL
,
Vcc = 3.0V
-
8
15
Current
V
IN
= V
IH
or V
IL
Vcc = 2.5V/2V/
-
5
10
I
I/O =
0mA
1.8V
I
CC1
Average
HY62UF16200-(I) /CS = V
IL,
Min Duty Cycle = 100%
-
-
80
Operating HY62QF16200-(I) I
I/O =
0mA
-
-
60
Current
HY62EF16200-(I)
-
-
40
HY62SF16200-(I)
-
-
35
I
SB
TTL
HY62UF16200-(I) /CS = V
IH
-
-
0.5
Standby
HY62QF16200-(I)
-
-
0.3
Current
HY62EF16200-(I)
-
-
0.3
(TTL Input)
HY62SF16200-(I)
-
-
0.3
I
SB1
Standby Current
/CS > Vcc - 0.2V
SL
-
0.05
2
(CMOS Input)
LL
-
-
10
V
OL
Output Low Voltage
Vcc = 3.0V
I
OL
= 2.1mA
-
-
0.4
Vcc = 2.5V
I
OL
= 0.5mA
Vcc = 2.0V
I
OL
= 0.33mA
Vcc = 1.8V
I
OL
= 0.26mA
V
OH
Output
HY62UF16200-(I) Vcc = 3.0V
I
OH =
-1.0mA
2.2
-
-
High
HY62QF16200-(I) Vcc = 2.5V
I
OH =
-0.5mA
2.0
-
-
Voltage
HY62EF16200-(I) Vcc = 2.0V
I
OH =
-0.44mA
1.6
-
-
HY62SF16200-(I) Vcc = 1.8V
I
OH =
-0.44mA
1.4
-
-
Note : Typical values are at Vcc = 3.0V/2.5V/2.0V/1.8V, T
A
= 25°C
Unit
uA
uA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
V
V
V
Rev.04 /Feb.99
4
HY62UF16200/HY62QF16200/HY62EF16200/HY62SF16200 Series
AC CHARACTERISTICS
Vcc = 3.0V±10%, T
A
= 0°C to 70°C (Normal)/ -40°C to 85°C (E.T.), unless otherwise specified
-70
-85
-10
# Symbol
Parameter
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
70
-
85
-
100
-
2
tAA
Address Access Time
-
70
-
85
-
100
3
tACS
Chip Select Access Time
-
70
-
85
-
100
4
tOE
Output Enable to Output Valid
-
40
-
45
-
50
5
tBA
/LB, /UB Access Time
-
40
-
45
-
50
6
tCLZ
Chip Select to Output in Low Z
10
-
10
-
20
-
7
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
8
tBLZ
/LB, /UB Enable to Output in Low Z
5
-
10
-
10
-
9
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30
10 tOHZ
Out Disable to Output in High Z
0
30
0
30
0
30
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
0
30
12 tOH
Output Hold from Address Change
10
-
10
-
15
-
WRITE CYCLE
13 tWC
Write Cycle Time
70
-
85
-
100
-
14 tCW
Chip Selection to End of Write
60
-
70
-
80
-
15 tAW
Address Valid to End of Write
60
-
70
-
80
-
16 tBW
/LB, /UB Valid to End of Write
60
-
70
-
80
-
17 tAS
Address Set-up Time
0
-
0
-
0
-
18 tWP
Write Pulse Width
50
-
55
-
75
-
19 tWR
Write Recovery Time
0
-
0
-
0
-
20 tWHZ
Write to Output in High Z
0
25
0
30
0
35
21 tDW
Data to Write Time Overlap
30
-
35
-
45
-
22 tDH
Data Hold from Write Time
0
-
0
-
0
-
23 tOW
Output Active from End of Write
5
-
5
-
10
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev.04 /Feb.99
5
电源技术
