HY62UF16101 Series
64Kx16bit full CMOS SRAM
DESCRIPTION
The HY62UF16101 is a high speed, low power
and 1M bit full CMOS SRAM organized as 65,536
words by 16bit. The HY62UF16101 uses high
performance full CMOS process technology and
designed for high speed low power circuit
technology. It is particularly well suited for used in
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.5V.
Product
Voltage
Speed
No.
(V)
(ns)
HY62UF16101
2.7~3.3
85*/100/120
HY62UF16101-I
2.7~3.3
85*/100/120
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
* 85ns is available with 30pF test load
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup
-. 1.5V(min) data retention
•
Standard pin configuration
-. 48 - uBGA
Operation
Current/Icc(mA)
15
15
Standby Current(uA)
LL
15
15
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
/LB
/OE A0
A1
A4
A6
A7
NC
A2
NC
BLOCK DIAGRAM
ADD INPUT
BUFFER
A1~A7
A14
ROW
DECODER
SENSE AMP
I/O1
IO9 /UB A3
IO10 IO11 A5
Vss IO12 NC
Vcc IO13 NC
/CS IO1
IO2 IO3
IO4 Vcc
IO5 Vss
A15
A8
A9
A10
A11
A12
A13
A0
COLUMN
DECODER
I/O8
DATA I/O
BUFFER
ADD INPUT
BUFFER
ADD INPUT
BUFFER
PRE DECODER
MEMORY ARRAY
64K x 16
WRITE DRIVER
I/O9
BLOCK
DECODER
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
I/O16
uBGA
/CS
/OE
/LB
/UB
/WE
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A15
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power( 2.7V ~ 3.3V )
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.09 /Jun. 00
Hyundai Semiconductor
HY62UF16101 Series
ORDERING INFORMATION
Part No.
HY62UF16101LLM
HY62UF16101LLM-I
Speed
85*/100/120
85*/100/120
Power
LL-part
LL-part
Temp.
I
Package
uBGA
uBGA
Note 1. Blank : Commercial, I : Industrial
* 85ns is available with 30pF test load
ABSOLUTE MAXIMUM RATING (1)
Symbol
V
IN,
V
OUT
Vcc
T
A
T
STG
P
D
T
SOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.2 to 3.6
-0.2 to 4.6
0 to 70
-40 to 85
-55 to 150
1.0
260
•
10
Unit
V
V
°C
°C
°C
W
°C •
sec
Remark
HY62UF16101
HY62UF16101-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS
H
X
L
L
L
/WE
X
X
H
H
H
/OE
X
X
H
H
L
/LB
X
H
L
X
L
H
L
L
H
L
/UB
X
H
X
L
H
L
L
H
L
L
Mode
Deselected
Deselected
Output Disabled
Output Disabled
Read
I/O
I/O1~I/O8
High-Z
High-Z
High-Z
High-Z
D
OUT
Hi-Z
D
OUT
D
IN
Hi-Z
D
IN
I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
Hi-Z
D
OUT
D
OUT
Hi-Z
D
IN
D
IN
Power
Stand by
Stand by
Active
Active
Active
L
L
X
Write
Active
Note:
1. H=V
IH
, L=V
IL
, X=don't care(V
IH
or V
IL)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the Upper byte, I/O 9 -I/O 16.
Rev.09 /Jun. 00
2
HY62UF16101 Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
0
2.2
-0.3
(1)
Typ.
3.0
0
-
-
Max.
3.3
0
Vcc+0.3
0.4
Unit
V
V
V
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
2. Undershoots are sampled and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, T
A
= 0°C to 70°C / -40°C to 85°C (I)
Sym
Parameter
Test Condition
I
LI
Input Leakage Current
Vss
<
V
IN
<
Vcc
I
LO
Output Leakage Current
Vss
<
V
OUT
<
Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
or
/
UB
=
V
IH
and /LB = V
IH
Icc
Operating Power Supply
/CS = V
IL
, V
IN
= V
IH
or V
IL,
Current
I
I/O =
0mA
I
CC1
Average Operating Current
/CS = V
IL,
Min Duty Cycle = 100%
I
I/O =
0mA, V
IN
= V
IH
or V
IL
I
SB
TTL Standby Current
/CS = V
IH
or /CS = V
IL
or
(TTL Input)
/UB, /LB = V
IH
I
SB1
Standby Current
LL
/CS
≥
Vcc - 0.2V or
(CMOS
Input)
/CS
<
Vss + 0.2V,
/UB, /LB
≥
Vcc - 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1mA
V
OH
Output High Voltage
I
OH =
-1.0mA
Note : 1.Typical values are at Vcc = 3.0V, T
A =
25
°C.
2.Typical values are sampled and not 100% tested.
Min.
-1
-1
Typ.
-
-
Max.
1
1
Unit
uA
uA
-
-
-
-
-
-
-
-
15
80
1
15
mA
mA
mA
uA
-
2.2
-
-
0.4
-
V
V
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE)
C
OUT
Output Capacitance(I/O)
Note : These parameters are sampled and not 100% tested
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
PF
PF
Rev.09 /Jun. 00
3
HY62UF16101 Series
AC CHARACTERISTICS
Vcc = 2.7V~3.3V, T
A
= 0°C to 70°C / -40°C to 85°C(I), unless otherwise specified
-85*
-10
# Symbol
Parameter
Min.
Max. Min.
Max.
READ CYCLE
1
tRC
Read Cycle Time
85
-
100
-
2
tAA
Address Access Time
-
85
-
100
3
tACS
Chip Select Access Time
-
85
-
100
4
tOE
Output Enable to Output Valid
-
45
-
50
5
tBA
/LB, /UB Access Time
-
85
-
100
6
tCLZ
Chip Select to Output in Low Z
10
-
20
-
7
tOLZ
Output Enable to Output in Low Z
5
-
5
-
8
tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
9
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
10 tOHZ
Out Disable to Output in High Z
0
30
0
30
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
12 tOH
Output Hold from Address Change
10
-
15
-
WRITE CYCLE
13 tWC
Write Cycle Time
85
-
100
-
14 tCW
Chip Selection to End of Write
70
-
80
-
15 tAW
Address Valid to End of Write
70
-
80
-
16 tBW
/LB, /UB Valid to End of Write
70
-
80
-
17 tAS
Address Set-up Time
0
-
0
-
18 tWP
Write Pulse Width
55
-
75
-
19 tWR
Write Recovery Time
0
-
0
-
20 tWHZ
Write to Output in High Z
0
30
0
35
21 tDW
Data to Write Time Overlap
35
-
45
-
22 tDH
Data Hold from Write Time
0
-
0
-
23 tOW
Output Active from End of Write
5
-
10
-
* 85ns is available with 30pF test load
-12
Min
Max.
120
-
-
-
-
20
10
10
0
0
0
15
120
100
100
100
0
85
0
0
50
0
10
-
120
120
60
120
-
-
-
40
40
40
-
-
-
-
-
-
-
-
40
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C / -40°C to 85°C (I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
CL = 100pF + 1TTL Load
CL* = 30pF + 1TTL Load
* Test load is 30pF for 85ns
Rev.09 /Jun. 00
4
HY62UF16101 Series
AC TEST LOADS
V
TM=2.8V
1029 Ohm
D
OUT
CL(1)
1728 Ohm
Note
1. Including jig and scope capacitance
Rev.09 /Jun. 00
5
