HY62K(U,V)T08081E
Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM
Revision History
Revision No
00
History
Initial
Merged 3.0V/3.3V SPEC
Revised
-
Marking Information Change : SOP Type
-
Voh Limit Change : 2.4V => 2.2V @2.7~3.6V
Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
Draft Date
Jan.20.2000
Remark
Final
01
Feb.21.2001
Final
02
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 02 / Apr. 2001
Hynix Semiconductor
HY62K(U,V)T08081E Series
DESCRIPTION
The HY62K(U,V)T08081E is a high-speed, low
power and 32,786 X 8-bits CMOS Static Random
Access Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
FEATURES
•
•
•
•
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min.) data retention
•
Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Standby Current(uA)
LL-Part
5
8
8
5
8
8
5
8
8
Temperature
(°C)
0~70(Normal)
-25~85(Extended)
-40~85(Extended)
0~70(Normal)
-25~85(Extended)
-40~85(Extended)
0~70(Normal)
-25~85(Extended)
-40~85(Extended)
Product
Voltage
Speed
No.
(V)
(ns)
HY62KT08081E-C
2.7~3.6
70*/85/100
HY62KT08081E-E
HY62KT08081E-I
HY62VT08081E-C
70/85/100
3.0~3.6
HY62VT08081E-E
HY62VT08081E-I
HY62UT08081E-C
2.7~3.3
70*/85/100
HY62UT08081E-E
HY62UT08081E-I
Note *. Measured at 30pF test load.
Operation
Current(mA)
2
2
2
PIN CONNECTION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
/OE
A11
A9
A8
A13
/WE
Vcc
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
PDIP
SOP
TSOP-I(Standard)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A14
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Inputs
Data Input/Output
Power(+5.0V)
Ground
A0
BLOCK DIAGRAM
SENSE AMP
ROW DECODER
ADD INPUT BUFFER
I/O1
OUTPUT BUFFER
I/O8
COLUMN DECODER
A14
/CS
/OE
/WE
Rev 02 / Apr. 2001
CONTROL
LOGIC
WRITE DRIVER
MEMORY ARRAY
512x512
2
HY62K(U,V)T08081E Series
ORDERING INFORMATION
Part No.
Vcc
HY62KT08081E-DPC
HY62KT08081E-DPE
HY62KT08081E-DPI
HY62KT08081E-DGC
HY62KT08081E-DGE
2.7~3.6V
HY62KT08081E-DGI
HY62KT08081E-DTC
HY62KT08081E-DTE
HY62KT08081E-DTI
HY62VT08081E-DPC
HY62VT08081E-DPE
HY62VT08081E-DPI
HY62VT08081E-DGC
3.0~3.6V
HY62VT08081E-DGE
HY62VT08081E-DGI
HY62VT08081E-DTC
HY62VT08081E-DTE
HY62VT08081E-DTI
HY62UT08081E-DPC
HY62UT08081E-DPE
HY62UT08081E-DPI
HY62UT08081E-DGC
HY62UT08081E-DGE
2.7~3.3V
HY62UT08081E-DGI
HY62UT08081E-DTC
HY62UT08081E-DTE
HY62UT08081E-DTI
Note *. Measured at 30pF test load.
Speed
Power
Temp
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
Package
PDIP
70*/85/100ns
LL-part
SOP
TSOP-I Standard
PDIP
70/85/100ns
LL-part
SOP
TSOP-I Standard
PDIP
70*/85/100ns
LL-part
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
HY62K(U,V)T08081E-C
HY62K(U,V)T08081E-E
HY62K(U,V)T08081E-I
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Rating
-0.3 to 4.6
0 to 70
-25 to 85
-40 to 85
-65 to 150
1.0
50
260
•10
Unit
V
°C
°C
°C
°C
W
mA
°C•sec
T
STG
P
D
I
OUT
T
SOLDER
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Rev 02 / Apr. 2001
2
HY62K(U,V)T08081E Series
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Vcc
Power Supply
Voltage
Parameter
HY62KT08081E
HY62VT08081E
HY62UT08081E
Min.
2.7
3.0
2.7
0
2.2
-0.3
(1)
Typ.
3.0/3.3
3.3
3.0
0
-
-
Max.
3.6
3.6
3.3
0
Vcc+0.3
0.4
Unit
V
V
V
V
V
V
Vss
Ground
V
IH
Input High Voltage
V
IL
Input Low Voltage
Note
1. V
IL
= -1.5V for pulse width less than 50ns
TRUTH TABLE
/CS
/WE /OE
Mode
H
X
X
Standby
L
H
H
Output Disabled
L
H
L
Read
L
L
X
Write
Note
1. H=V
IH
, L=V
IL
, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
DC CHARACTERISTICS
Vcc = 2.7~3.6V, T
A
= 0°C to 70°C (Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
-1
-
1
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
/CS = V
IL
,
-
-
2
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating Current
/CS = V
IL,
V
IN
= V
IH
or V
IL,
-
-
30
Min. Duty Cycle = 100%, I
I/O =
0mA
I
CC2
Average Operating Current
/CS = V
IL,
V
IN
= V
IH
or V
IL
-
-
5
Cycle = 1us , I
I/O =
0mA
I
SB
TTL Standby Current
/CS= V
IH,
-
-
0.3
(TTL Inputs)
V
IN
= V
IH
or V
IL
I
SB1
CMOS Standby Current
/CS > Vcc - 0.2V,
-
-
5
0~70
°C
-
-
8
(CMOS Inputs)
V
IN
> Vcc - 0.2V or -25~85
°C
or
V
IN
< Vss + 0.2V
-40~85
°C
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
OH
Output High Voltage
I
OH =
-1.0mA
2.2
-
-
Note : Typical values are at Vcc =3.0/3.3V, T
A
= 25°C
Unit
uA
uA
mA
mA
mA
mA
uA
uA
V
V
Rev 02 / Apr. 2001
3
HY62K(U,V)T08081E Series
AC CHARACTERISTICS
Vcc = 2.7~3.6V , T
A
= 0°C to 70°C (Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial),
unless otherwise specified.
-70
-85
-10
# Symbol
Parameter
Min.
Max. Min.
Max. Min
Max.
READ CYCLE
1
tRC
Read Cycle Time
70
-
85
-
100
-
2
tAA
Address Access Time
-
70
-
85
-
100
3
tACS
Chip Select Access Time
-
70
-
85
-
100
4
tOE
Output Enable to Output Valid
-
35
-
40
-
50
5
tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
6
tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
7
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30
8
tOHZ
Out Disable to Output in High Z
0
30
0
30
0
30
9
tOH
Output Hold from Address Change
10
-
10
-
15
-
WRITE CYCLE
10 tWC
Write Cycle Time
70
-
85
-
100
-
11 tCW
Chip Selection to End of Write
60
-
70
-
80
-
12 tAW
Address Valid to End of Write
60
-
70
-
80
-
13 tAS
Address Set-up Time
0
-
0
-
0
-
14 tWP
Write Pulse Width
50
-
60
-
70
-
15 tWR
Write Recovery Time
0
-
0
-
0
-
16 tWHZ
Write to Output in High Z
0
25
0
30
0
35
17 tDW
Data to Write Time Overlap
30
-
40
-
40
-
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
10
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev 02 / Apr. 2001
4
微控制器 MCU
