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HYB3116160BST-70

1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

器件类别：存储    存储   

厂商名称：SIEMENS

厂商官网：http://www.infineon.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
SIEMENS
包装说明
,
Reach Compliance Code
unknow
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
70 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码
R-PDSO-G44
内存密度
16777216 bi
内存集成电路类型
FAST PAGE DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
44
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
刷新周期
4096
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子位置
DUAL
文档预览
1M x 16-Bit Dynamic RAM
(1k & 4k -Refresh)
HYB3116160BSJ/BST(L)-50/-60/-70
HYB3118160BSJ/BST(L)-50/-60/-70
Advanced Information
•
•
•
1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
Performance:
-50
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
90
35
-60
60
15
30
110
40
-70
70
20
35
130
45
ns
ns
ns
ns
ns
•
•
•
•
•
•
•
•
•
•
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 720 active mW ( HYB3118160BSJ/BST-50)
max. 648 active mW ( HYB3118160BSJ/BST-60)
max. 576 active mW ( HYB3118160BSJ/BST-70)
max. 360 active mW ( HYB3116160BSJ/BST-50)
max. 324 active mW ( HYB3116160BSJ/BST-60)
max. 288 active mW ( HYB3116160BSJ/BST-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720
µW
standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
Fast page mode capability
2 CAS / 1 WE
All inputs, outputs and clocks fully LV-TTL-compatible
1024 refresh cycles / 16 ms for HYB 3118160BSJ
4096 refresh cycles / 64 ms for HYB 3116160BSJ
Plastic Package:
P-SOJ-42-1 400 mil
P-TSOPII-50/44-1 400mil
Semiconductor Group
1
1.96
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.
The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well
as advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard
SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system
bit densities and are compatible with commonly used automatic testing and insertion equipment.
System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-
performance logic device families.The HYB3116160BSTL parts have a very low power „sleep
mode“ suppported by Self Refresh.
Ordering Information
Type
HYB 3116160BSJ-50
HYB 3116160BSJ-60
HYB 3116160BSJ-70
HYB 3118160BSJ-50
HYB 3118160BSJ-60
HYB 3118160BSJ-70
HYB 3116160BST-50
HYB 3116160BST-60
HYB 3116160BST-70
HYB 3118160BST-50
HYB 3118160BST-60
HYB 3118160BST-70
Ordering Code
on request
on request
on request
on request
on request
on request
on request
on request
on request
on request
on request
on request
Package
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Pin Names
A0 to A9
A0 to A9
A0 to A11
A0 to A7
RAS
OE
I/O1-I/O16
UCAS
LCAS
WE
V
CC
V
SS
N.C.
Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST
Column Addess Inputs for 1k-refresh version HYB3118160BSJ/BST
Row Address Inputs for 4k-refresh version HYB3116160BSJ/BST
Column Address Inputs for 4k-refresh version HYB3116160BSJ/BST
Row Address Strobe
Output Enable
Data Input/Output
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
Semiconductor Group
2
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
P-SOJ-42 (400 mil)
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
N.C.
N.C.
WE
RAS
A11/NC
A10/NC
A0
A1
A2
A3
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Vss
I/O1
I/O16
I/O2
I/O3
I/O15
I/O4
I/O14
Vcc
I/O13
I/O5
Vss
I/O6
I/O12
I/O7
I/O11
I/O8
I/O10
N.C.
I/O9
N.C.
LCAS
N.C.
UCAS
N.C.
OE
WE
A9
RAS
A11/N.C.
A8
A10.N.C.
A7
A0
A6
A1
A5
A2
A4
A3
Vss
Vcc
Vcc
P-TSOPII-50/44 (400mil)
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
N.C.
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
N.C.
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
Vss
*) A11 and A10 are not connected for HYB3118160BSJ/BST (1k-refresh version)
Truth Table
RAS
H
L
L
L
L
L
L
L
L
LCAS
H
H
L
H
L
L
H
L
L
UCAS
H
H
H
L
L
H
L
L
L
WE
H
H
H
H
H
L
L
L
H
OE
H
H
L
L
L
H
H
H
H
I/O1-I/O8
High-Z
High-Z
Dout
High-Z
Dout
Din
Don't care
Din
High-Z
3
I/O9-I/O16
High-Z
High-Z
High-Z
Dout
Dout
Don't care
Din
Din
High-Z
Operation
Standby
Refresh
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
NOP
Semiconductor Group
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
I/O1
I
/O2
I
/O16
WE
UCAS
LCAS
.
.
&
Data in
Buffer
No. 2 Clock
Generator
16
Data out
Buffer
16
OE
8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
12
Column
Address
Buffer(8)
8
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
16
Refresh
Counter (12)
12
Row
256
x16
Address
Buffers(12)
12
Decoder
4096
Row
Memory Array
4096x256x16
RAS
No. 1 Clock
Generator
Block Diagram for HYB 3116160BSJ
Semiconductor Group
4
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
I/O1
I
/O2
I
/O16
WE
UCAS
LCAS
.
.
&
Data in
Buffer
No. 2 Clock
Generator
16
Data out
Buffer
16
OE
10
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
Column
Address
Buffer(10)
10
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
16
Refresh
Counter (10)
10
Row
10
1024
x16
Address
Buffers(10)
10
Decoder
1024
Row
Memory Array
1024x1024x16
RAS
No. 1 Clock
Generator
Block Diagram for HYB 3118160BSJ
Semiconductor Group
5
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参数对比
与HYB3116160BST-70相近的元器件有：HYB3116160BSJ、HYB3116160BSJ-50、HYB3116160BSJ-60、HYB3116160BSJ-70、HYB3116160BST-60、HYB3116160BST-50、HYB3118160BSJ-60、HYB3118160BST-60。描述及对比如下：
型号 HYB3116160BST-70 HYB3116160BSJ HYB3116160BSJ-50 HYB3116160BSJ-60 HYB3116160BSJ-70 HYB3116160BST-60 HYB3116160BST-50 HYB3118160BSJ-60 HYB3118160BST-60
描述 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
厂商名称 SIEMENS - SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE - FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 70 ns - 50 ns 60 ns 70 ns 60 ns 50 ns 60 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码 R-PDSO-G44 - R-PDSO-J42 R-PDSO-J42 R-PDSO-J42 R-PDSO-G44 R-PDSO-G44 R-PDSO-J42 R-PDSO-G44
内存密度 16777216 bi - 16777216 bi 16777216 bi 16777216 bi 16777216 bi 16777216 bi 16777216 bi 16777216 bi
内存集成电路类型 FAST PAGE DRAM - FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 16 - 16 16 16 16 16 16 16
功能数量 1 - 1 1 1 1 1 1 1
端口数量 1 - 1 1 1 1 1 1 1
端子数量 44 - 42 42 42 44 44 42 44
字数 1048576 words - 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 - 1000000 1000000 1000000 1000000 1000000 1000000 1000000
工作模式 ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C - 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 1MX16 - 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16
输出特性 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 - 4096 4096 4096 4096 4096 - 1024
最大供电电压 (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V - 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES - YES YES YES YES YES YES YES
技术 CMOS - CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING - J BEND J BEND J BEND GULL WING GULL WING J BEND GULL WING
端子位置 DUAL - DUAL DUAL DUAL DUAL DUAL DUAL DUAL
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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