3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3116405BJ/BT(L) -50/-60/-70
HYB3117405BJ/BT(L) -50/-60/-70
Advanced Information
•
•
•
4 194 304 words by 4-bit organization
0 to 70 °C operating temperature
Performance
-50
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO)
cycle time
50
13
25
84
20
-60
60
15
30
104
25
-70
70
20
35
124
30
ns
ns
ns
ns
ns
•
•
•
•
•
•
•
•
Single + 3.3 V (± 0.3V ) supply
Low power dissipation
max. 396 active mW (HYB3117405BJ/BT-50)
max. 363 active mW (HYB3117405BJ/BT-60)
max. 330 active mW (HYB3117405BJ/BT-70)
max. 360 active mW (HYB3116405BJ/BT-50)
max. 324 active mW (HYB3116405BJ/BT-60)
max. 288 active mW (HYB3116405BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720
µW
standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
Self Refresh and test mode
Hyper page mode (EDO) capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms for HYB3117405
4096 refresh cycles / 64 ms for HYB3116405
Plastic Package:
P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
Semiconductor Group
1
3.96
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
The HYB 3116(7)405BJ/BT(L) is a 16MBit dynamic RAM organized as 4194304 words by 4-bits.
The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well
as advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(7)405BJ/BT(L) to be packaged in a standard
SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package. These packages provide high
system bit densities and are compatible with commonly used automatic testing and insertion
equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct
interfacing with high-performance logic device families.The HYB3116405BTL parts have a very low
power „sleep mode“ supported by Self Refresh.
Ordering Information
Type
HYB 3117405BJ-50
HYB 3117405BJ-60
HYB 3117405BJ-70
HYB 3117405BT-50
HYB 3117405BT-60
HYB 3117405BT-70
HYB 3116405BJ-50
HYB 3116405BJ-60
HYB 3116405BJ-70
HYB 3116405BT-50
HYB 3116405BT-60
HYB 3116405BT-70
HYB 3116405BTL-50
HYB 3116405BTL-60
HYB 3116405BTL-70
Q67100-Q1143
Q67100-Q1144
Q67100-Q1186
on request
on request
on request
Q67100-Q1135
Q67100-Q1136
Q67100-Q1184
Q67100-Q1127
Q67100-Q1128
Ordering Code
Q67100-Q1119
Q67100-Q1120
Package
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
LP-DRAM (access time 50 ns)
LP-DRAM (access time 60 ns)
LP-DRAM (access time 70 ns)
Semiconductor Group
2
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Vcc
I/O1
I/O2
WE
RAS
N.C.
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
Vss
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
Vcc
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
Vss
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
HYB3117405BJ/BT
HYB3116405BJ/BT
P-SOJ-26/24-1
(300mil)
P-TSOPII-26/24-1 (300mil)
Pin Configuration
Pin Names
A0 to A10
A0 to A11
A0 to A9
RAS
OE
I/O1 -I/O4
CAS
WE
Row & Column Address Inputs for HYB3117405
Row Address Inputs for HYB3116405
Column Address Inputs for HYB3116405
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
V
CC
V
SS
N.C.
Semiconductor Group
3
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
I/O1 I/O2 I/O3 I/O4
WE
CAS
.
&
Data in
Buffer
No. 2 Clock
Generator
Data out
Buffer
4
OE
4
11
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
11
Column
Address
Buffer(11)
11
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
4
Refresh
Counter (11)
11
Row
2048
x4
Address
Buffers(11)
11
Decoder
2048
Row
Memory Array
2048x2048x4
RAS
No. 1 Clock
Generator
Block Diagram for HYB3117405
Semiconductor Group
4
HYB 3116(7)405BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
I/O1 I/O2 I/O3 I/O4
WE
CAS
.
&
Data in
Buffer
No. 2 Clock
Generator
Data out
Buffer
4
OE
4
10
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
12
Column
Address
Buffer(10)
10
Column
Decoder
Refresh
Controller
Sense Amplifier
I/O Gating
4
Refresh
Counter (12)
12
Row
1024
x4
Address
Buffers(12)
12
Decoder
4096
Row
Memory Array
4096x1024x4
RAS
No. 1 Clock
Generator
Block Diagram for HYB3116405
Semiconductor Group
5
模拟电子
