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HYB314100BJ-60

Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20

器件类别：存储    存储   

厂商名称：Infineon(英飞凌)

厂商官网：http://www.infineon.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Infineon(英飞凌)
零件包装代码
SOJ
包装说明
0.300 INCH, PLASTIC, SOJ-26/20
针数
20
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
60 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
SEPARATE
JESD-30 代码
R-PDSO-J20
JESD-609代码
e0
长度
17.27 mm
内存密度
4194304 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
1
功能数量
1
端口数量
1
端子数量
20
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
4MX1
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ20/26,.34
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
刷新周期
1024
座面最大高度
3.75 mm
自我刷新
NO
最大待机电流
0.001 A
最大压摆率
0.06 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.75 mm
文档预览
4M x 1-Bit Dynamic RAM
Low Power 4M x 1-Bit Dynamic RAM
HYB 314100BJ/BJL -50/-60/-70
Advanced Information
•
•
•
•
4 194 304 words by 1-bit organization
0 to 70 ˚C operating temperature
Fast Page Mode Operation
Performance:
-50
-60
60
15
30
110
40
-70
70
20
35
130
45
ns
ns
ns
ns
ns
t
RAC
t
CAC
t
AA
t
RC
t
PC
•
•
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
95
35
•
•
•
•
•
•
•
Single + 3.3 V (± 0.3 V ) supply with a built-in
V
bb
generator
Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
Standby power dissipation:
7.2 mW max. standby (TTL)
3.6 mW max. standby (CMOS)
720
µW
max. standby (CMOS) for Low Power Version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
1024 refresh cycles / 128 ms Low Power Version
Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
4.96
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
The HYB 314100BJ/BJL is the new generation dynamic RAM organized as 4 194 304 words by
1-bit. The HYB 314100BJ/BJL utilizes CMOS silicon gate process as well as advances circuit
techniques to provide wide operation margins, both internally and for the system user. Multiplexed
address inputs permit the HYB 514100BJ/BJL to be packed in a standard plastic P-SOJ-26/20
package. This package size provides high system bit densities and is compatible with commonly
used automatic testing and insertion equipment. System oriented features include single + 3.3 V
(± 0.3 V) power supply, direct interfacing with high performance logic device families.
Ordering Information
Type
HYB 314100BJ-50
HYB 314100BJ-60
HYB 314100BJ-70
HYB 314100BJL-50
HYB 314100BJL-60
HYB 314100BJL-70
Ordering Code
Q67100-Q2035
Q67100-Q2037
Q67100-Q2039
on request
on request
on request
Package
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
P-SOJ-26/20-5
Descriptions
3.3 V DRAM
(access time 50 ns)
3.3 V DRAM
(access time 60 ns)
3.3 V DRAM
(access time 70 ns)
3.3 V Low Power DRAM
(access time 50 ns)
3.3 V Low Power DRAM
(access time 60 ns)
3.3 V Low Power DRAM
(access time 70 ns)
Semiconductor Group
2
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Pin Configuration
(top view)
P-SOJ-26/20-5
Pin Names
A0-A10
RAS
CAS
WE
DI
DO
Address Input
Row Address Strobe
Column Address Strobe
Read/Write Input
Data In
Data Out
Power Supply (+ 3.3 V)
Ground (0 V)
No Connection
V
CC
V
SS
N.C.
Semiconductor Group
3
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Block Diagram
Semiconductor Group
4
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Input/output voltage ........................................................................... – 1 to + min (
V
CC
+ 0.5, 4.6) V
Power Supply voltage .................................................................................................. – 1 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70 ˚C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V ,
t
T
= 5 ns
Parameter
Input high voltage
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
µA)
CMOS Output low voltage (
I
OUT =
100
µA
)
Input leakage current, any input
(0 V <
V
in
<
V
CC
+ 0.3 V, all other input = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
<
V
CC
)
Average
V
CC
supply current
-50 version
-60 version
-70 version
Standby
V
CC
supply current
(RAS = CAS = WE =
V
IH
)
Average
V
CC
supply current during RAS-only
refresh cycles
-50 version
-60 version
-70 version
Average
V
CC
supply current during fast page
mode operation
-50 version
-60 version
-70 version
Standby
V
CC
supply current
(RAS = CAS = WE =
V
CC
– 0.2 V)
Symbol
Limit Values
min.
max.
0.8
–
0.4
0.2
10
10
2.0
– 1.0
2.4
–
–
– 10
– 10
Unit Test
Condition
1)
1)
1)
1)
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
I
O(L)
I
CC1
V
CC
+ 0.5 V
V
V
V
V
V
µA
µA
mA
V
CC
– 0.2 –
1)
1)
2) 3)4)
_
–
–
70
60
55
2
mA
mA
–
2)4)
I
CC2
I
CC3
–
_
–
–
70
60
55
mA
2) 3)4)
I
CC4
–
–
50
45
40
1
200
I
CC5
–
mA
µA
1)
L-version
Semiconductor Group
5
查看更多>
参数对比
与HYB314100BJ-60相近的元器件有：HYB314100BJ-50、HYB314100BJ-70、HYB314100BJL-50、HYB314100BJL-60、HYB314100BJL-70。描述及对比如下：
型号 HYB314100BJ-60 HYB314100BJ-50 HYB314100BJ-70 HYB314100BJL-50 HYB314100BJL-60 HYB314100BJL-70
描述 Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 4MX1, 50ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 4MX1, 50ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20 Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 SOJ SOJ SOJ SOJ SOJ SOJ
包装说明 0.300 INCH, PLASTIC, SOJ-26/20 0.300 INCH, PLASTIC, SOJ-26/20 0.300 INCH, PLASTIC, SOJ-26/20 0.300 INCH, PLASTIC, SOJ-26/20 0.300 INCH, PLASTIC, SOJ-26/20 0.300 INCH, PLASTIC, SOJ-26/20
针数 20 20 20 20 20 20
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 60 ns 50 ns 70 ns 50 ns 60 ns 70 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE
JESD-30 代码 R-PDSO-J20 R-PDSO-J20 R-PDSO-J20 R-PDSO-J20 R-PDSO-J20 R-PDSO-J20
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 17.27 mm 17.27 mm 17.27 mm 17.27 mm 17.27 mm 17.27 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 1 1 1 1 1 1
功能数量 1 1 1 1 1 1
端口数量 1 1 1 1 1 1
端子数量 20 20 20 20 20 20
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000 4000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4MX1 4MX1 4MX1 4MX1 4MX1 4MX1
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ SOJ SOJ SOJ
封装等效代码 SOJ20/26,.34 SOJ20/26,.34 SOJ20/26,.34 SOJ20/26,.34 SOJ20/26,.34 SOJ20/26,.34
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 1024 1024 1024 1024 1024 1024
座面最大高度 3.75 mm 3.75 mm 3.75 mm 3.75 mm 3.75 mm 3.75 mm
自我刷新 NO NO NO NO NO NO
最大待机电流 0.001 A 0.001 A 0.001 A 0.0002 A 0.0002 A 0.0002 A
最大压摆率 0.06 mA 0.07 mA 0.055 mA 0.07 mA 0.06 mA 0.055 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 J BEND J BEND J BEND J BEND J BEND J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 7.75 mm 7.75 mm 7.75 mm 7.75 mm 7.75 mm 7.75 mm
厂商名称 Infineon(英飞凌) - Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
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器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
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