8M x 36-Bit Dynamic RAM Module
HYM 368020S/GS-60
•
SIMM modules with 8 388 608 words by 36-bit organization
for PC main memory applications
Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
Fast page mode capability
40 ns cycle time (-60 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 7260 mW active (-60 version)
max. 6600 mW active (-70 version)
CMOS – 132 mW standby
TTL
–264 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
24 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height
Utilizes sixteen 4Mx4-DRAMs and eight 4M x 1 DRAMs in 300 mil wide SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (S- version)
Gold contact pads (GS - version)
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Semiconductor Group
1
12.95
HYM 368020S/GS-60
8M
×
36-Bit
The HYM 368020S/GS-60 is a 32 MByte DRAM module organized as 8 388 608 words by 36-Bit
in a 72-pin single-in-line package comprising sixteen HYB 5117400BJ 4M
×
4 DRAMs and eight
HYB 514100BJ 4M x 1 DRAMs in 300 mil wide SOJ-packages mounted together with 24 0.2
µF
ceramic decoupling capacitors on a PC board.
The HYM 368020S/GS-60 can also be used as a 16 777 360 words by 18-bits dynamic RAM
module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, … , DQ17 and
DQ35, respectively.
Each HYB 5117400BJ and HYB 514100BJ is described in the data sheet and is fully electrical
tested and processed according to SIEMENS standard quality procedure prior to module assembly.
After assembly onto the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 368020S/GS-60/-70 dictates the use of early write cycles.
Ordering Information
Type
HYM 368020S-60
HYM 368020GS-60
Ordering Code
Q67100-Q985
Q67100-Q2007
Package
L-SIM-72-14
L-SIM-72-14
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 60 ns)
Semiconductor Group
2
HYM 368020S/GS-60
8M
×
36-Bit
Pin Configuration
Pin Names
VSS 1 DQ0 2
DQ18 3 DQ1 4
DQ19 5 DQ2 6
DQ20 7 DQ3 8
DQ21 9 VCC 10
N.C. 11 A0
12
A1
13 A2
14
A3
15 A4 16
A5
17 A6 18
A10 19 DQ4 20
DQ22 21 DQ5 22
DQ23 23 DQ6 24
DQ24 25 DQ7 26
DQ25 27 A7
28
N.C. 29 VCC 30
A8
31 A9
32
RAS3 33 RAS2 34
DQ26 35 DQ8 36
DQ17 37 DQ35 38
VSS 39 CAS0 40
CAS2 41 CAS3 42
CAS1 43 RAS0 44
RAS1 45 N.C. 46
WE
47 N.C. 48
DQ9 49 DQ27 50
DQ10 51 DQ28 52
DQ11 53 DQ29 54
DQ12 55 DQ30 56
DQ13 57 DQ31 58
VCC 59 DQ32 60
DQ14 61 DQ33 62
DQ15 63 DQ34 64
DQ16 65 N.C. 66
PD0 67 PD1 68
PD2 69 PD3 70
N.C. 71 VSS 72
A0-A10
DQ0-DQ35
CAS0 - CAS3
RAS0- RAS3
WE
Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
V
CC
V
SS
PD
N.C.
Presence Detect Pins
-60
PD0
PD1
PD2
PD3
N.C.
V
SS
N.C.
N.C.
Semiconductor Group
3
HYM 368020S/GS-60
8M
×
36-Bit
RAS0
CAS0
DQ0-DQ3
CAS RAS
I/O1-I/O4
OE
D0
CAS RAS
I/O1-I/O4
OE
D3
Di
Do
CAS RAS
M0
RAS1
CAS RAS
I/O1-I/O4
OE
D1
CAS RAS
I/O1-I/O4
D2
OE
Di
Do
CAS RAS
M1
DQ4-DQ7
DQ8
CAS1
DQ9-DQ12
CAS RAS
I/O1-I/O4
OE
D4
CAS RAS
I/O1-I/O4
OE
D7
Di
Do
CAS RAS
M2
RAS3
CAS RAS
I/O1-I/O4
OE
D5
CAS RAS
I/O1-I/O4
D6
OE
Di
Do
CAS RAS
M3
DQ13-DQ16
DQ17
RAS2
CAS2
DQ18-DQ21
DQ22-DQ25
DQ26
CAS3
CAS RAS
I/O1-I/O4
OE
D8
CAS RAS
I/O1-I/O4
OE
D11
Di
Do
CAS RAS
M4
CAS RAS
I/O1-I/O4
OE
D9
CAS RAS
I/O1-I/O4
D10
OE
Di
Do
CAS RAS
M5
DQ27-DQ30
DQ31-DQ34
CAS RAS
I/O1-I/O4
OE
D12
CAS RAS
I/O1-I/O4
D15
OE
Di
Do
CAS RAS
M6
VCC
VSS
CAS RAS
I/O1-I/O4
OE
D13
CAS RAS
I/O1-I/O4
D14
OE
Di
Do
CAS RAS
M7
DQ35
A0-A10
WE
D0-D15, M0-M7
D0-D15, M0-M7
C0 - C23
Block Diagram
Semiconductor Group
4
HYM 368020S/GS-60
8M
×
36-Bit
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 9.24 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current
(RAS, CAS, address cycling,
t
RC
=
t
RC
min)
-60 version
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current
during RAS only refresh cycles
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min)
-60 version
Symbol
Limit Values
min.
max.
Vcc+0.5
0.8
–
0.4
20
20
V
V
V
V
µA
µA
2.4
– 0.5
2.4
–
– 20
– 20
Unit
Test
Condition
1)
1)
1)
1)
1)
V
IH
V
IL
V
OH
V
OL
I
I(L)
I
O(L)
I
CC1
1)
–
1320
48
mA
mA
2),3),4)
I
CC2
I
CC3
–
–
1320
mA
2),4)
Semiconductor Group
5
