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HYS64T32000GDL-5-A

200-Pin Small Outline Dual-In-Line Memory Module

器件类别:存储    存储   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Infineon(英飞凌)
零件包装代码
MODULE
包装说明
DIMM, DIMM200,24
针数
200
Reach Compliance Code
compli
ECCN代码
EAR99
访问模式
SINGLE BANK PAGE BURST
最长访问时间
0.6 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
200 MHz
I/O 类型
COMMON
JESD-30 代码
R-XDMA-N200
内存密度
2147483648 bi
内存集成电路类型
DDR DRAM MODULE
内存宽度
64
功能数量
1
端口数量
1
端子数量
200
字数
33554432 words
字数代码
32000000
工作模式
SYNCHRONOUS
最高工作温度
65 °C
最低工作温度
组织
32MX64
输出特性
3-STATE
封装主体材料
UNSPECIFIED
封装代码
DIMM
封装等效代码
DIMM200,24
封装形状
RECTANGULAR
封装形式
MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
1.8 V
认证状态
Not Qualified
刷新周期
8192
自我刷新
YES
最大压摆率
0.84 mA
最大供电电压 (Vsup)
1.9 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
NO
技术
CMOS
温度等级
COMMERCIAL
端子形式
NO LEAD
端子节距
0.6 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
D a t a S he et , Rev. 0.91, J u n e 2 00 4
HYS64T32000[G/H]DL–[3.7/5]–A
HYS64T64020[G/H]DL–[3.7/5]–A
HYS64T128021[G/H]DL–[3.7/5]–A
200-Pin Small Outline Dual-In-Line Memory Module
SO-DIMM
DDR2 SDRAM
M e m or y P r o du c t s
N e v e r
s t o p
t h i n k i n g .
Edition 2004-06
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
©
Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
D a t a S he et , Rev. 0.91, J u n e 2 00 4
HYS64T32000[G/H]DL–[3.7/5]–A
HYS64T64020[G/H]DL–[3.7/5]–A
HYS64T128021[G/H]DL–[3.7/5]–A
200-Pin Small Outline Dual-In-Line Memory Module
SO-DIMM
DDR2 SDRAM
Memor y Product s
N e v e r
s t o p
t h i n k i n g .
all
HYS64T[32000/64020/128021][G/H]DL–[3.7/5]–A
Revision History:
Previous Revision:
Page
all
all
all
Rev. 0.91
Rev. 0.83
2004-06
2003-09
Subjects (major changes since last revision)
editorial changes
removed HYS64T128022HDL products and all -3 products
added HYS64T128021[G/]DL products
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
techdoc.mp@infineon.com
Template:
mp_a4_v2.2_2003-10-07.fm
HYS64T[32000/64020/128021][G/H]DL–[3.7/5]–A
512 Mbit DDR2 SDRAM
Table of Contents
1
1.1
1.2
1.3
2
3
4
4.1
4.2
5
6
7
8
Overview
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6
6
8
Block Diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
I
DD
Specifications and Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
I
DD
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
ODT (On Die Termination) Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Electrical Characteristics & AC Timings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SPD Codes
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Product Type Nomenclature (DDR2 DRAMs and DIMMs)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Data Sheet
5
Rev. 0.91, 2004-06
09122003-FTXN-KM26
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