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HZM7.5NB3TR

Zener Diode, 7.68V V(Z), 2.08%, 0.2W, Silicon, Unidirectional, SC-59A, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:Hitachi (Renesas )

厂商官网:http://www.renesas.com/eng/

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器件参数
参数名称
属性值
厂商名称
Hitachi (Renesas )
零件包装代码
SC-59A
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
最大功率耗散
0.2 W
认证状态
Not Qualified
标称参考电压
7.68 V
表面贴装
YES
技术
ZENER
端子形式
GULL WING
端子位置
DUAL
最大电压容差
2.08%
工作测试电流
5 mA
文档预览
HZM-N Series
Silicon Epitaxial Planar Zener Diode for Stabilizer
ADE-208-130C (Z)
Rev. 3
Features
Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.
MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HZM-N Series
Laser Mark
Let to Mark Code
Package Code
MPAK
Outline
3
2
1
(Top View)
1 NC
2 Anode
3 Cathode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Note: See Fig. 3.
Symbol
Pd*
Tj
Tstg
Value
200
150
–55 to +150
Unit
mW
°C
°C
HZM-N Series
Electrical Characteristics
(Ta = 25°C)
Zener Voltage*
V
Z
(V)
Type
HZM2.0N
HZM2.2N
HZM2.4N
HZM2.7N
Grade
B
B
B
B
B1
B2
HZM3.0N
B
B1
B2
HZM3.3N
B
B1
B2
HZM3.6N
B
B1
B2
HZM3.9N
B
B1
B2
HZM4.3N
B
B1
B2
B3
HZM4.7N
B
B1
B2
B3
HZM5.1N
B
B1
B2
B3
Min
1.90
2.10
2.30
2.50
2.50
2.65
2.80
2.80
2.95
3.10
3.10
3.25
3.40
3.40
3.55
3.70
3.70
3.87
4.01
4.01
4.15
4.28
4.42
4.42
4.55
4.69
4.84
4.84
4.98
5.14
Max
2.20
2.40
2.60
2.90
2.75
2.90
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5
5
1.5
130
5
5
10
1.0
130
5
5
10
1.0
130
5
5
10
1.0
130
5
5
10
1.0
130
5
5
20
1.0
130
5
5
50
1.0
120
5
Test
Condition
I
Z
(mA)
5
5
5
5
Reverse Current
I
R
(µA)
Max
120
120
120
120
Test
Condition
V
R
(V)
0.5
0.7
1.0
1.0
Dynamic Resistance
r
d
(Ω)
Max
100
100
100
110
Test
Condition
I
Z
(mA)
5
5
5
5
Note: Tested with pulse (P
W
= 40ms)
HZM-N Series
Electrical Characteristics
(Ta = 25°C) (cont)
Zener Voltage*
V
Z
(V)
Type
HZM5.6N
Grade
B
B1
B2
B3
HZM6.2N
B
B1
B2
B3
HZM6.8N
B
B1
B2
B3
HZM7.5N
B
B1
B2
B3
HZM8.2N
B
B1
B2
B3
HZM9.1N
B
B1
B2
B3
HZM10N
B
B1
B2
B3
Min
5.31
5.31
5.49
5.67
5.86
5.86
6.06
6.26
6.47
6.47
6.65
6.86
7.06
7.06
7.28
7.52
7.76
7.76
8.02
8.28
8.56
8.56
8.85
9.15
9.45
9.45
9.77
10.11
Max
5.92
5.55
5.73
5.92
6.53
6.12
6.33
6.53
7.14
6.73
6.93
7.14
7.84
7.36
7.60
7.84
8.64
8.10
8.36
8.64
9.55
8.93
9.23
9.55
10.55
9.87
10.21
10.55
5
2
7.0
30
5
5
2
6.0
30
5
5
2
5.0
30
5
5
2
4.0
30
5
5
2
3.5
30
5
5
2
3.0
50
5
Test
Condition
I
Z
(mA)
5
Reverse Current
I
R
(µA)
Max
5
Test
Condition
V
R
(V)
2.5
Dynamic Resistance
r
d
(Ω)
Max
80
Test
Condition
I
Z
(mA)
5
Note: Tested with pulse (P
W
= 40ms)
HZM-N Series
Electrical Characteristics
(Ta = 25°C) (cont)
Zener Voltage *
V
Z
(V)
Type
HZM11N
Grade
B
B1
B2
B3
HZM12N
B
B1
B2
B3
HZM13N
B
B1
B2
B3
HZM15N
B
B1
B2
B3
HZM16N
B
B1
B2
B3
HZM18N
B
B1
B2
B3
HZM20N
B
B1
B2
B3
Min
10.44
10.44
10.76
11.10
11.42
11.42
11.74
12.08
12.47
12.47
12.91
13.37
13.84
13.84
14.34
14.85
15.37
15.37
15.85
16.35
16.94
16.94
17.56
18.21
18.86
18.86
19.52
20.21
Max
11.56
10.88
11.22
11.56
12.60
11.90
12.24
12.60
13.96
13.03
13.49
13.96
15.52
14.46
14.98
15.52
17.09
16.01
16.51
17.09
19.03
17.70
18.35
19.03
21.08
19.70
20.39
21.08
5
2
15.0
50
5
5
2
13.0
45
5
5
2
12.0
40
5
5
2
11.0
40
5
5
2
10.0
35
5
5
2
9.0
35
5
Test
Condition
I
Z
(mA)
5
Reverse Current
I
R
(µA)
Max
2
Test
Condition
V
R
(V)
8.0
Dynamic Resistance
r
d
(Ω)
Max
30
Test
Condition
I
Z
(mA)
5
Note: Tested with pulse (P
W
= 40ms)
HZM-N Series
Electrical Characteristics
(Ta = 25°C) (cont)
Zener Voltage*
V
Z
(V)
Type
HZM22N
Grade
B
B1
B2
B3
HZM24N
B
B1
B2
B3
HZM27N
HZM30N
HZM33N
HZM36N
B
B
B
B
Min
20.88
20.88
21.54
22.23
22.93
22.93
23.72
24.54
25.10
28.00
31.00
34.00
Max
23.17
21.77
22.47
23.17
25.57
23.96
24.78
25.57
28.90
32.00
35.00
38.00
2
2
2
2
2
2
2
2
21.0
23.0
25.0
27.0
70
80
80
90
2
2
2
2
5
2
19.0
60
5
Test
Condition
I
Z
(mA)
5
Reverse Current
I
R
(µA)
Max
2
Test
Condition
V
R
(V)
17.0
Dynamic Resistance
r
d
(Ω)
Max
55
Test
Condition
I
Z
(mA)
5
Note: Tested with pulse (P
W
= 40ms)
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