HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z
(Previous: ADE-208-124)
Rev.1.00
Mar.11.2004
Features
•
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
•
Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.
•
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-N Series
Mark
Type No.
Package Code
MHD
Pin Arrangement
1
Type No.
Cathode band
1. Cathode
2. Anode
Rev.1.00, Mar.11.2004, page 1 of 6
2
7.5
B
2
HZS-N Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
−55
to +175
Unit
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
V
Z
(V)*
Type
HZS2.0N
HZS2.2N
HZS2.4N
HZS2.7N
HZS3.0N
HZS3.3N
HZS3.6N
HZS3.9N
HZS4.3N
Grade
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
Min
1.88
2.02
2.12
2.22
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.47
3.62
3.77
3.92
4.05
4.20
4.34
4.47
4.59
4.71
4.85
4.97
5.12
5.29
5.46
5.64
5.81
5.99
6.16
6.32
6.52
6.70
1
Test
Condition
Max
2.10
2.20
2.30
2.41
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.68
3.83
3.98
4.14
42.6
4.40
4.53
4.65
4.77
4.91
5.03
5.18
5.35
5.52
5.70
5.88
6.06
6.24
6.40
6.59
6.79
6.97
I
Z
(mA)
5
5
5
5
5
5
5
5
5
Reverse Current
Test
I
R
(µA)
Condition
Max
120
120
120
100
50
20
10
5
5
V
R
(V)
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Dynamic Resistance
Test
r
d
(Ω)
Condition
Max
100
100
100
110
120
120
120
120
120
I
Z
(mA)
5
5
5
5
5
5
5
5
5
HZS4.7N
5
5
1.0
100
5
HZS5.1N
5
5
1.5
70
5
HZS5.6N
5
5
2.5
40
5
HZS6.2N
5
5
3.0
30
5
HZS6.8N
5
2
3.5
25
5
Note:
1. Tested with pulse (P
W
= 40 ms)
Rev.1.00, Mar.11.2004, page 2 of 6
HZS-N Series
(Ta = 25°C)
Zener Voltage
V
Z
(V)*
Type
HZS7.5N
Grade
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B4
B1
B2
B3
B4
B1
B2
B3
B4
Min
6.88
7.11
7.33
7.56
7.82
8.07
8.33
8.61
8.89
9.19
9.48
9.82
10.18
10.50
10.82
11.13
11.50
11.80
12.18
12.59
13.03
13.48
13.95
14.42
14.87
15.33
15.79
16.34
16.90
17.51
18.14
18.80
19.52
20.23
20.76
21.22
21.68
22.26
22.75
23.29
23.81
24.26
24.97
25.63
26.29
1
Test
Condition
Max
7.19
7.41
7.64
7.90
8.15
8.41
8.70
8.99
9.29
9.59
9.90
10.30
10.63
10.95
11.26
11.63
11.92
12.30
12.71
13.16
13.62
14.09
14.56
15.02
15.50
15.96
16.50
17.06
17.67
18.30
18.96
19.68
20.45
21.08
21.65
22.09
22.61
23.12
23.73
24.27
24.81
25.52
26.26
26.95
27.64
I
Z
(mA)
5
Reverse Current
Test
I
R
(µA)
Condition
Max
0.5
V
R
(V)
4.0
Dynamic Resistance
Test
r
d
(Ω)
Condition
Max
25
I
Z
(mA)
5
HZS8.2N
5
0.5
5.0
20
5
HZS9.1N
5
0.5
6.0
20
5
HZS10N
5
0.2
7.0
20
5
HZS11N
5
0.2
8.0
20
5
HZS12N
5
0.2
9.0
25
5
HZS13N
5
0.2
10
25
5
HZS15N
5
0.2
11
25
5
HZS16N
5
0.2
12
25
5
HZS18N
5
0.2
13
30
5
HZS20N
5
0.2
15
30
5
HZS22N
5
0.2
17
30
5
HZS24N
5
0.2
19
35
5
HZS27N
5
0.2
21
45
5
Note:
1. Tested with pulse (P
W
= 40 ms)
Rev.1.00, Mar.11.2004, page 3 of 6
HZS-N Series
(Ta = 25°C)
Zener Voltage
V
Z
(V)*
Type
HZS30N
Grade
B1
B2
B3
HZS33N
B4
B1
B2
B3
HZS36N
B4
B1
B2
B3
HZS39N
B4
B1
B2
B3
B4
Min
26.99
27.70
28.36
29.02
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
1
Reverse Current
Test
Condition
I
R
(µA)
Max
0.2
Test
Condition
V
R
(V)
23
Dynamic Resistance
r
d
(Ω)
Max
55
Test
Condition
I
Z
(mA)
5
Max
28.39
29.13
29.82
30.51
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
I
Z
(mA)
5
5
0.2
25
65
5
5
0.2
27
75
5
5
0.2
30
85
5
Notes: 1. Tested with pulse (P
W
= 40 ms).
2. Type No. is as follows: HZS2.0NB1, HZS2.0NB2, ••• HZS39NB4.
Rev.1.00, Mar.11.2004, page 4 of 6
HZS-N Series
Main Characteristic
HZS2.4N
HZS3.0N
HZS3.6N
HZS4.3N
HZS5.1N
HZS6.2N
HZS7.5N
HZS8.2N
HZS9.1N
HZS10N
HZS11N
HZS12N
HZS16N
10
HZS2.0N
HZS13N
HZS15N
HZS18N
HZS20N
HZS24N
HZS27N
Zener Current I
Z
(mA)
4
2
0
0
HZS6.8N
6
HZS22N
4
8
12
16
20
24
28
HZS30N
HZS33N
32
HZS36N
36
HZS39N
8
40
Zener Voltage V
Z
(V)
Fig.1 Zener current vs. Zener voltage
Zener Voltage Temperature Coefficient
γ
Z
(mV/°C)
Zener Voltage Temperature Coefficient
γ
Z
(%/°C)
0.10
0.08
0.06
0.04
mV/°C
%/°C
50
40
30
20
10
0
−10
−20
−30
−40
0
5
−50
10 15 20 25 30 35 40
Zener Voltage V
Z
(V)
500
l
2.5 mm
3 mm
Power Dissipation Pd (mW)
400
Printed circuit board
100
×
180
×
1.6t mm
Material: paper phenol
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.10
300
l
=
5 mm
200
l
=
10 mm
(Publication value)
100
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Fig.2 Temperature Coefficient vs. Zener voltage
Rev.1.00, Mar.11.2004, page 5 of 6
模拟电子
