HZU-LL Series
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
ADE-208-236B(Z)
Rev 2
Jul. 1999
Features
•
Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series).
•
Temperature coefficient is approximately 1/2 lower than the HZU series.
•
Vz-Iz characteristics are semi-logarithmic linear from Iz=1nA to 1mA.
•
Ultra small Resin Package(URP) is suitable for surface mount design.
Ordering Information
Type No.
HZU-LL Series
Mark
Let to Mark Code
Package Code
URP
Outline
Cathode mark
Mark
1
2
1. Cathode
2. Anode
HZU-LL Series
Absolute Maximum Ratings (Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
150
150
-55 to +150
Unit
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
V
Z
(V) *
1
Type
HZU2LL
Grade
A
B
C
HZU3LL
A
B
C
HZU4LL
A
B
C
HZU5LL
A
B
C
Note:
1.
2.
3.
4.
Min
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.3
4.6
4.9
Max
2.0
2.3
2.6
2.9
3.2
3.5
3.8
4.1
4.4
4.7
5.0
5.3
0.5
100
3.0
380
0.5
(1.5)
50
0.5
0.5
100
2.0
370
0.5
(1.5)
50
0.5
0.5
100
1.0
360
0.5
(1.2)
50
0.5
I
R
(nA)
I
Z
(mA) Max
0.5
100
V
R
(V)
0.5
Z
ZT
(Ω)
Max
350
Z
ZK
(kΩ)*
2
I
ZT
(mA) Typ
0.5
(1.2)
∆V
Z
(V) *
3
I
ZK
(µA) Max
50
0.5
Tested with DC.
Reference only.
∆V
Z
= V
Z
(I
Z
= 0.5 mA) - V
Z
(I
z
= 0.05 mA)
Type No. is as follows; HZU2ALL, HZU2BLL,
…
HZU5CLL.
Mark Code
Type
HZU2LL
Grade
A
B
C
HZU3LL
A
B
C
MarK No.
2A
2B
2C
3A
3B
3C
HZU5LL
Type
HZU4LL
Grade
A
B
C
A
B
C
Mark No.
4A
4B
4C
5A
5B
5C
2
HZU-LL Series
Main Characteristic
-2
10
–0.01
Zener Voltage
Temperature Coefficient
γ
z
(%/°C)
HZU2LL
HZU3LL
0
Zener Voltage
γ
z
Temperature Coefficient
(mV/°C)
HZU4LL
10
Zener Current I
Z
(A)
-3
HZU5LL
–0.02
mV/°C
%/°C
–0.5
10
-4
10
-5
–0.03
–1.0
10
-6
–0.04
–1.5
10
-7
10
-8
0
1
2
3
4
5
6
7
8
–0.05
1
2
5
4
Zener Voltage V
Z
(V)
3
6
–2.0
Zener Voltage V
Z
(V)
Fig.1 Zener current Vs. Zener voltage
250
Fig.2 Temperature Coefficient Vs. Zener voltage
1.5mm
0.8mm
200
Power Dissipation P
d
(mW)
Cu Foil
150
Printed circuit board
15
×
20
×
1.6t mm
Material: Glass Epoxy Resin
+Cu Foil
100
50
0
0
100
150
Ambient Temperature Ta (°C)
50
200
Fig.3 Power Dissipation Vs. Ambient Temperature
0.8mm
3
HZU-LL Series
Package Dimensions
Unit : mm
Cathode Mark
1.25±0.15
0.3±0.15
1
1.7±0.15
2.5±0.15
2
1. Cathode
2. Anode
Hitachi Code
JEDECCode
EIAJCode
Weight(g)
URP
—
—
0.004
0.9±0.15
0−0.10
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HZU-LL Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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