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ICS840024AGILFT

Clock Generator, 125MHz, PDSO20, 6.50 X 4.40 MM, 0.92 MM HEIGHT, ROHS COMPLIANT, MO-153, TSSOP-20

器件类别:微控制器和处理器    时钟发生器   

厂商名称:IDT (Integrated Device Technology)

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
TSSOP
包装说明
TSSOP,
针数
20
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码
R-PDSO-G20
JESD-609代码
e3
长度
6.5 mm
湿度敏感等级
1
端子数量
20
最高工作温度
85 °C
最低工作温度
-40 °C
最大输出时钟频率
125 MHz
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)
260
主时钟/晶体标称频率
25 MHz
认证状态
Not Qualified
座面最大高度
1.2 mm
最大供电电压
2.625 V
最小供电电压
2.375 V
标称供电电压
2.5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn) - annealed
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
4.4 mm
uPs/uCs/外围集成电路类型
CLOCK GENERATOR, OTHER
Base Number Matches
1
文档预览
PRELIMINARY
ICS840024I
F
EMTO
C
LOCKS
™ C
RYSTAL
-
TO
-
LVCMOS/LVTTL F
REQUENCY
S
YNTHESIZER
G
ENERAL
D
ESCRIPTION
The ICS840024I is a 4 output LVCMOS/LVTTL
ICS
Synthesizer optimized to generate Ethernet
HiPerClockS™
reference clock frequency and is a member of the
HiPerClocks
TM
family of high performance clock
solutions from ICS. The ICS840024I uses IDT’s
rd
3 generation low phase noise VCO technology and can
achieve 1ps or lower typical random rms phase jitter, easily
meeting Ethernet jitter requirements. The ICS840024I is
packaged in a small 20-pin TSSOP package.
F
EATURES
• Four LVCMOS/LVTTL outputs, 15Ω typical output impedance
• Selectable crystal oscillator interface
or LVCMOS single-ended input
• Supports the following output frequency: 125MHz
• RMS phase jitter @125MHz (1.875MHz - 20MHz):
0.60ps (typical)
• Output supply modes:
Core/Output
3.3V/3.3V
3.3V/2.5V
2.5V/2.5V
• -40°C to 85°C ambient operating temperature
Available in both standard (RoHS 5) and lead-free
(RoHS 6) packages
B
LOCK
D
IAGRAM
OE Pullup
nPLL_SEL
nXTAL_SEL
XTAL_IN
Pulldown
Pulldown
25MHz
P
IN
A
SSIGNMENT
nc
nc
nXTAL_SEL
TEST_CLK
OE
MR
nPLL_SEL
V
DDA
nc
V
DD
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
nc
GND
Q0
Q1
V
DDO
Q2
Q3
GND
XTAL_IN
XTAL_OUT
OSC
XTAL_OUT
TEST_CLK Pulldown
0
1
Phase
Detector
Q0
1
VCO
Q1
0
÷5
Q2
ICS840024I
20-Lead TSSOP
6.5mm x 4.4mm x 0.92mm
package body
M = ÷25 (fixed)
Q3
G Package
Top View
MR
Pulldown
The Preliminary Information presented herein represents a product in pre-production. The noted characteristics are based on initial product
characterization and/or qualification. Integrated Device Technology, Incorporated (IDT) reserves the right to change any circuitry or specifica-
tions without notice.
840024AGI
1
REV. A DECEMBER 21, 2007
PRELIMINARY
ICS840024I
F
EMTO
C
LOCKS
™C
RYSTAL
-
TO
-
LVCMOS/LVTTL F
REQUENCY
S
YNTHESIZER
T
ABLE
1. P
IN
D
ESCRIPTIONS
Number
1, 2, 9, 20
3
4
5
6
Name
nc
nXTAL_SEL
TEST_CLK
OE
MR
Type
Unused
Input
Input
Input
Input
Pulldown
Pulldown
Pullup
Pulldown
Description
No connect.
Selects between the crystal or TEST_CLK inputs as the PLL reference
source. When HIGH, selects TEST_CLK. When LOW, selects XTAL
inputs. LVCMOS/LVTTL interface levels.
Single-ended LVCMOS/LVTTL clock input.
Output enable pin. When HIGH, the outputs are active. When LOW, the
outputs are in a high impedance state. LVCMOS/LVTTL interface levels.
Active HIGH Master Reset. When logic HIGH, the internal dividers are
reset causing the otuputs to go low. When logic LOW, the internal
dividers and the outputs are enabled. LVCMOS/LVTTL interface levels.
PLL Bypass. When LOW, the output is driven from the VCO output.
When HIGH, the PLL is bypassed and the output frequency =
reference clock frequency/N output divider.
LVCMOS/LVTTL interface levels.
Analog supply pin.
Core supply pin.
Crystal oscillator interface. XTAL_OUT is the output.
XTAL_IN is the input.
Power supply ground.
Single-ended clock outputs. LVCMOS/LVTTL interface levels.
15
typical output impedence.
Output supply pin.
7
8
10
11,
12
13, 19
14, 15
17, 18
16
nPLL_SEL
V
DDA
V
DD
XTAL_OUT,
XTAL_IN
GND
Q3, Q2,
Q1, Q0
V
DDO
Input
Power
Power
Input
Power
Output
Power
Pulldown
NOTE:
Pullup
and
Pulldown
refer to internal input resistors. See Table 2, Pin Characteristics, for typical values.
T
ABLE
2. P
IN
C
HARACTERISTICS
Symbol
C
IN
C
PD
R
PULLUP
R
PULLDOWN
R
OUT
Parameter
Input Capacitance
V
DD
, V
DDA
, V
DDO
= 3.465V
Power Dissipation Capacitance
Input Pullup Resistor
Input Pulldown Resistor
Output Impedance
V
DD
, V
DDA
= 3.465V, V
DDO
= 2.625V
V
DD
, V
DDA
, V
DDO
= 2.625V
Test Conditions
Minimum
Typical
4
TBD
TBD
TBD
51
51
15
Maximum
Units
pF
pF
pF
pF
KΩ
KΩ
840024AGI
2
REV. A DECEMBER 21, 2007
PRELIMINARY
ICS840024I
F
EMTO
C
LOCKS
™ C
RYSTAL
-
TO
-
LVCMOS/LVTTL F
REQUENCY
S
YNTHESIZER
A
BSOLUTE
M
AXIMUM
R
ATINGS
Supply Voltage, V
DD
Inputs, V
I
Outputs, V
O
Package Thermal Impedance,
θ
JA
Storage Temperature, T
STG
4.6V
-0.5V to V
DD
+ 0.5 V
-0.5V to V
DD
+ 0.5V
73.2°C/W (0 lfpm)
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional
operation of product at these conditions or any conditions be-
yond those listed in the
DC Characteristics
or
AC Character-
istics
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
T
ABLE
3A. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DDD
= V
DDA
= V
DDO
= 3.3V±5%, T
A
= -40°C
TO
85°C
Symbol
V
DD
V
DDA
V
DDO
I
DD
I
DDA
I
DDO
Parameter
Core Supply Voltage
Analog Supply Voltage
Output Supply Voltage
Power Supply Current
Analog Supply Current
Output Supply Current
Test Conditions
Minimum
3.135
3.135
3.135
Typical
3.3
3.3
3.3
75
6
3
Maximum
3.465
3.465
3.465
Units
V
V
V
mA
mA
mA
T
ABLE
3B. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DD
= V
DDA
= 3.3V±5%, V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol
V
DD
V
DDA
V
DDO
I
DD
I
DDA
I
DDO
Parameter
Core Supply Voltage
Analog Supply Voltage
Output Supply Voltage
Power Supply Current
Analog Supply Current
Output Supply Current
Test Conditions
Minimum
3.135
3.135
2.375
Typical
3.3
3.3
2.5
75
6
3
Maximum
3.465
3.465
2.625
Units
V
V
V
mA
mA
mA
T
ABLE
3C. P
OWER
S
UPPLY
DC C
HARACTERISTICS
,
V
DDD
= V
DDA
= V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol
V
DD
V
DDA
V
DDO
I
DD
I
DDA
I
DDO
Parameter
Core Supply Voltage
Analog Supply Voltage
Output Supply Voltage
Power Supply Current
Analog Supply Current
Output Supply Current
Test Conditions
Minimum
2.375
2.375
2.375
Typical
2.5
2.5
2.5
70
6
3
Maximum
2.625
2.625
2.625
Units
V
V
V
mA
mA
mA
840024AGI
3
REV. A DECEMBER 21, 2007
PRELIMINARY
ICS840024I
F
EMTO
C
LOCKS
™C
RYSTAL
-
TO
-
LVCMOS/LVTTL F
REQUENCY
S
YNTHESIZER
T
ABLE
3D. LVCMOS/LVTTL DC C
HARACTERISTICS
,
V
DD
= V
DDA
= V
DDO
= 3.3V±5%
OR
2.5V±5%,
OR
V
DD
= V
DDA
= 3.3V±5%, V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol Parameter
V
IH
Input
High Voltage
Input
Low Voltage
Input
High Current
OE, MR,
nPLL_SEL, nXTAL_SEL,
TEST_CLK
OE, MR,
nPLL_SEL, nXTAL_SEL,
TEST_CLK
OE
nPLL_SEL, MR,
nXTAL_SEL, TEST_CLK
OE
I
IL
Input
Low Current
nPLL_SEL, MR,
nXTAL_SEL, TEST_CLK
V
DD
= V
IN
= 3.465V or
2.625V
V
DD
= V
IN
= 3.465V or
2.625V
V
DD
= 3.465V or 2.625V,
V
IN
= 0V
V
DD
= 3.465V or 2.625V,
V
IN
= 0V
V
DDO
= 3.3V ± 5%
V
DDO
= 2.5V ± 5%
V
DDO
= 3.3V or 2.5V ± 5%
Test Conditions
Minimum Typical
2
2
-0.3
-0.3
Maximum
V
DD
+ 0.3
V
DD
+ 0.3
0.8
1.3
5
150
-150
-5
2.6
1.8
0.5
Units
V
V
V
V
µA
µA
µA
µA
V
V
V
V
IL
I
IH
V
OH
V
OL
Output High Voltage; NOTE 1
Output Low Voltage; NOTE 1
NOTE 1: Outputs terminated with 50
to V
DDO
/2. See Parameter Measurement Information, Output Load Test Circuit.
T
ABLE
4. C
RYSTAL
C
HARACTERISTICS
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
NOTE: Characterized using an 18pf parallel resonant crystal.
Test Conditions
Minimum
Typical
25
50
7
Maximum
Units
MHz
pF
Fundamental
840024AGI
4
REV. A DECEMBER 21, 2007
PRELIMINARY
ICS840024I
F
EMTO
C
LOCKS
™ C
RYSTAL
-
TO
-
LVCMOS/LVTTL F
REQUENCY
S
YNTHESIZER
T
ABLE
5A. AC C
HARACTERISTICS
,
V
DD
= V
DDA
= V
DDO
= 3.3V±5%, T
A
= -40°C
TO
85°C
Symbol
f
OUT
Parameter
Output Frequency
Output Skew; NOTE 1, 3
RMS Phase Jitter (Random);
NOTE 2
PLL Lock Time
Output Rise/Fall Time
Intergration Range
1.875MHz - 20MHz
20% to 80%
Test Conditions
Minimum
Typical
125
TBD
0.60
TBD
400
Maximum
Units
MHz
ps
ps
ms
ps
%
t
sk(o)
t
jit(Ø)
t
L
t
R
/ t
F
odc
Output Duty Cycle
50
NOTE 1: Defined as skew between outputs at the same supply voltages and with equal load conditions.
Measured at V
DDO
/2.
NOTE 2: Please refer to the Phase Noise Plot.
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.
T
ABLE
5B. AC C
HARACTERISTICS
,
V
DD
= V
DDA
= 3.3V±5%, V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol
f
OUT
Parameter
Output Frequency
Output Skew; NOTE 1, 3
RMS Phase Jitter (Random);
NOTE 2
PLL Lock Time
Output Rise/Fall Time
Intergration Range
1.875MHz - 20MHz
20% to 80%
Test Conditions
Minimum
Typical
125
TBD
0.55
TBD
400
Maximum
Units
MHz
ps
ps
ms
ps
%
t
sk(o)
t
jit(Ø)
t
L
t
R
/ t
F
odc
Output Duty Cycle
50
NOTE 1: Defined as skew between outputs at the same supply voltages and with equal load conditions.
Measured at V
DDO
/2.
NOTE 2: Please refer to the Phase Noise Plot.
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.
T
ABLE
5C. AC C
HARACTERISTICS
,
V
DD
= V
DDA
= V
DDO
= 2.5V±5%, T
A
= -40°C
TO
85°C
Symbol
f
OUT
Parameter
Output Frequency
Output Skew; NOTE 1, 3
RMS Phase Jitter (Random);
NOTE 2
PLL Lock Time
Output Rise/Fall Time
Intergration Range
1.875MHz - 20MHz
20% to 80%
Test Conditions
Minimum
Typical
125
TBD
0.50
TBD
400
Maximum
Units
MHz
ps
ps
ms
ps
%
t
sk(o)
t
jit(Ø)
t
L
t
R
/ t
F
odc
Output Duty Cycle
50
NOTE 1: Defined as skew between outputs at the same supply voltages and with equal load conditions.
Measured at V
DDO
/2.
NOTE 2: Please refer to the Phase Noise Plot.
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.
840024AGI
5
REV. A DECEMBER 21, 2007
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参数对比
与ICS840024AGILFT相近的元器件有:ICS840024AGILF。描述及对比如下:
型号 ICS840024AGILFT ICS840024AGILF
描述 Clock Generator, 125MHz, PDSO20, 6.50 X 4.40 MM, 0.92 MM HEIGHT, ROHS COMPLIANT, MO-153, TSSOP-20 Clock Generator, 125MHz, PDSO20, 6.50 X 4.40 MM, 0.92 MM HEIGHT, MO-153, TSSOP-20
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 TSSOP TSSOP
包装说明 TSSOP, TSSOP,
针数 20 20
Reach Compliance Code compliant unknown
ECCN代码 EAR99 EAR99
Is Samacsys N N
JESD-30 代码 R-PDSO-G20 R-PDSO-G20
JESD-609代码 e3 e3
长度 6.5 mm 6.5 mm
端子数量 20 20
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
最大输出时钟频率 125 MHz 125 MHz
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSSOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度) 260 260
主时钟/晶体标称频率 25 MHz 25 MHz
认证状态 Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm
最大供电电压 2.625 V 3.465 V
最小供电电压 2.375 V 3.135 V
标称供电电压 2.5 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 Matte Tin (Sn) - annealed MATTE TIN
端子形式 GULL WING GULL WING
端子节距 0.65 mm 0.65 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 30 NOT SPECIFIED
宽度 4.4 mm 4.4 mm
uPs/uCs/外围集成电路类型 CLOCK GENERATOR, OTHER CLOCK GENERATOR, OTHER
Base Number Matches 1 1
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