Ratings at 25°C ambient temperature unless otherwise specified.
JEDEC
Type
Number
General
Semiconductor
Part
Number
Stand-Off
Voltage
V
WM
(Volts)
Minimum(3)
Breakdown
Voltage
at 1.0mA
V(
BR
)
(Volts)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Maximum
Clamping
Voltage
at l
PP
= 1.0A
Vc
(Volts)
Maximum
Clamping
Voltage
at l
PP
= 10A
Vc
(Volts)
Maximum
Peak
Pulse
Current
I
PP
(Amps)
1N6382
1N6383
1N6384
1N6385
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
8.0
10.0
12.0
15.0
9.4
11.7
14.1
17.6
50.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
11.6
14.5
17.1
21.4
100
90
70
60
Notes:
(1) “ C “ Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ±1 Volt tolerance normally specified for power supply regulation on most integrated
circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages
are employed.
(4) Clamping Factor: 1.33 at full rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V
(BR)
(Breakdown
Voltage) as measured on a specific device.
ICTE5.0 thru ICTE15C
Series
T
RANS
Z
ORB
®
Transient Voltage Suppressor
Ratings and
Characteristic Curves
(T
A
=25
O
C unless otherwise noted.)
Fig. 1 -- Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
P
PPM
-- Peak Pulse Power (kW)
100
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
100
Fig. 2 -- Pulse Derating Curve
75
1
50
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
td -- Pulse Width (sec.)
I
PPM
-- Peak Pulse Current, % I
RSM
Fig. 3 -- Pulse Waveform
150
tr = 10µsec.
Peak Value
I
PPM
Half Value – I
PPM
2
T
J
= 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
0
0
25
50
75
100
125
150
175
200
T
A
-- Ambient Temperature (°C)
100
Fig. 4 -- Typical Junction Capacitance
Uni-Directional
100,000
C
J
-- Junction Capacitance (pF)
50
10/1000µsec. Waveform
as defined by R.E.A.
td
Measured at
Zero Bias
10,000
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
1000
Measured at
Stand-Off
Voltage, V
WM
0
0
1.0
t -- Time (ms)
3.0
4.0
Fig. 5 -- Typical Junction Capacitance
Bidirectional Type
100,000
C
J
-- Junction Capacitance
(pF)
Measured at
Zero Bias
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10,000
100
1.0
10
100
200
1,000
Measured at
Stand-Off
Voltage, V
WM
V
(BR)
-- Breakdown Voltage (V)
100
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I
FSM
-- Peak Forward Surge Current (A)
100
200
200
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
1
10
V
(BR)
-- Breakdown Voltage (V)
Fig. 7 -- Typical Characteristics Clamping Voltage
