®
HIGH-SPEED BiCMOS
ECL STATIC RAM
1M (256K x 4-BIT) SRAM
Integrated Device Technology, Inc.
PRELIMINARY
IDT10514
IDT100514
IDT101514
FEATURES:
• 262,144-words x 4-bit organization
• Address access time: 10/12/15 ns
• Low power dissipation: 800mW (typ.)
• Guaranteed Output Hold time
• Fully compatible with ECL logic levels
• Separate data input and output
• Standard through-hole and surface mount packages
• Guaranteed-performance die available for MCMs/hybrids
DESCRIPTION:
The IDT10514, IDT100514 and IDT101514 are 1,048,576-
bit high-speed BiCMOS ECL Static Random Access Memo-
ries organized as 256Kx4, with separate data inputs and
outputs. All I/Os are fully compatible with ECL levels.
These devices are part of a family of asynchronous four-
bit-wide ECL SRAMs. The devices have been configured to
follow the standard ECL SRAM JEDEC pinout. Because they
are manufactured in BiCMOS technology, power dissipation
is greatly reduced over equivalent bipolar devices. Low power
operation provides higher system reliability and makes pos-
sible the use of the plastic SOJ package for high-density
surface mount assembly.
The fast access time and guaranteed Output Hold time
allow greater margin for system timing variation. DataIN setup
time specified with respect to the trailing edge of Write Pulse
eases write timing allowing balanced Read and Write cycle
times.
FUNCTIONAL BLOCK DIAGRAM
A
0
16,384-BIT
MEMORY ARRAY
V
CC
V
EE
DECODER
A
11
D
0
D
1
D
2
D
3
SENSE AMPS
AND READ/WRITE
CONTROL
Q
0
Q
1
Q
2
Q
3
WE
1
WE
2
CS
2811 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE
©1992
Integrated Device Technology, Inc.
AUGUST 1992
1
IDT10514, IDT100514, IDT101514
HIGH-SPEED BiCMOS ECL STATIC RAM 1M (256K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATION
A
14
A
15
A
16
A
17
CS
D
0
Q
0
V
CC
V
EE
Q
1
D
1
WE
A
0
A
1
A
2
A
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
13
A
12
A
11
A
10
A
9
D
3
Q
3
V
EE
V
CC
Q
2
D
2
A
8
A
7
A
6
A
5
A
4
PACKAGES
400-Mil-Wde
CERAMIC PACKAGE
C32-2
2786 drw 03
400-Mil-Wide
PLASTIC SOJ PACKAGE
SO32-3
2786 drw 04b
Top View
2786 drw 02
PIN DESCRIPTIONS
Symbol
A
0
through A
17
D
0
through D
3
Q
0
through Q
3
WE
CS
V
EE
V
CC
Pin Name
Address Inputs
Data Inputs
Data Outputs
Write Enable Input
Chip Select Input (Internal pull down)
More Negative Supply Voltage
Less Negative Supply Voltage
2786 tbl 01
400-Mil-Wde
CERPACK
E32
2786 drw 04a
Hi-Rel Die
For Hybrid and MCM
Applications
2786 drw 05
LOGIC SYMBOL
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
DIP
Symbol
C
IN
C
OUT
Parameter
Input
Capacitance
Output
Capacitance
Typ.
4
6
Max.
—
—
SOJ
Typ.
3
3
Max.
—
—
Unit
pF
pF
2786 tbl 02
D
0
D
1
D
2
D
3
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
Q
0
Q
1
Q
2
Q
3
TRUTH TABLE
(1)
CS
H
L
L
WE
X
H
L
DataOUT
L
RAM Data
L
Function
Deselected
Read
Write
2786 tbl 03
NOTE:
1. H=High, L=Low, X=Don’t Care
CS
WE
2786 drw 06
2
IDT10514, IDT100514, IDT101514
HIGH-SPEED BiCMOS ECL STATIC RAM 1M (256K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
A
Rating
Terminal Voltage
With Respect to GND
Operating
Temperature
10K
100K
101K
Ceramic
Plastic
Value
+0.5 to -7.0
0 to +75
0 to +85
0 to +75
-55 to +125
-65 to +150
-55 to +125
1.5
-50
Unit
V
°C
AC/DC ELECTRICAL OPERATING RANGES
I/O
10K
100K
V
EE
-5.2V
±
5%
-4.5V
±
5%
T
A
0 to +75°C, air flow exceeding 2 m/sec
0 to +85°C, air flow exceeding 2 m/sec
2786 tbl 05
101K -4.75V to -5.46V 0 to +75°C, air flow exceeding 2 m/sec
T
BIAS
T
STG
P
T
I
OUT
Temperature Under Bias
Storage
Temperatuure
°C
°C
W
mA
Power Dissipation
DC Output Current
(Output High)
NOTE:
2786 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (1)
10K
Symbol
V
OH
Parameter
Output HIGH Voltage
(V
IN
= V
IH(Max)
or V
IL(Min)
)
Output LOW Voltage
(V
IN
= V
IH(Max)
or V
IL(Min)
)
Output Threshold HIGH Voltage
(V
IN
= V
IH(Min)
or V
IL(Max)
)
Output Threshold LOW Voltage
(V
IN
= V
IH(Min)
or V
IL(Max)
)
Input HIGH Voltage
(Guaranteed Input Voltage
High for All Inputs)
Input LOW Voltage
(Guaranteed Input Voltage
Low for All Inputs)
Input HIGH Current
CS
V
IN
= V
IH(Max)
Others
Input LOW Current
V
IN
= V
IL(Min)
CS
Others
Supply Current
Min.
-1000
-960
-900
-1870
-1850
-1830
-1020
-980
-920
—
—
—
-1145
-1105
-1045
-1870
-1850
-1830
—
—
0.5
-50
-180
Max.
-840
-810
-720
-1665
-1650
-1625
—
—
—
-1645
-1630
-1605
-840
-810
-720
-1490
-1475
-1450
220
110
170
90
—
TA
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
0°C
25°C
75°C
—
—
—
—
—
100K/101K
Min.
-1025
Max.
-880
Unit
mV
V
OL
-1810
-1620
mV
V
OHC
-1035
—
mV
V
OLC
—
-1610
mV
V
IH
-1165
-880
mV
V
IL
-1810
-1475
mV
I
IH
—
—
0.5
-50
-170 (100K)
-180 (101K)
220
110
170
90
—
—
µA
µA
µA
µA
mA
I
IL
I
EE
NOTE:
1. RL = 50Ω to -2V, air flow exceeding 2 m/sec.
3
IDT10514, IDT100514, IDT101514
HIGH-SPEED BiCMOS ECL STATIC RAM 1M (256K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
AC TEST LOAD CONDITION
V
CC
(GND)
AC TEST INPUT PULSE
-0.9V
80%
20%
DATA
OUT
-1.7V
50
Ω
30pF*
t
R
t
R
= t
F
= 1.5ns typ.
t
F
0.01
µ
F
V
EE
-2.0V
*Includes probe and
jig capacitance
2786 drw 07
Note: All timing measurements are
referenced to 50% input levels.
2786 drw 08
RISE/FALL TIME
Symbol
tR
tF
Parameter
Output Rise Time
Output Fall Time
Min.
—
—
Typ.
1.5
1.5
Max.
—
—
Unit
ns
ns
2786 tbl 06
FUNCTIONAL DESCRIPTION
The IDT10514, IDT100514, and IDT101514 BiCEMOS
ECL static RAMs provide high speed with low power dissipa-
tion typical of BiCMOS ECL. These devices follow the
conventional center power pinout and functionality for 256Kx4
ECL SRAMs.
WRITE TIMING
To write data to the device, a Write Pulse need be formed
on the Write Enable input (WE) to control the write to the
SRAM array. While CS and ADDR must be set-up when WE
goes low, DataIN can settle after the falling edge of WE, giving
the data path extra margin. Data is written to the memory cell
at the end of the Write Pulse, and addresses and Chip Select
must be held after the rising edge of the Write Pulse to ensure
satisfactory completion of the cycle.
DataOUT is disabled (held low) during the Write Cycle. If
CS is held low (active) and addresses remain unchanged, the
Data OUT pins will output the written data after "Write Recov-
ery time" (t
WR
).
Because of the very short Write Pulse requirement, these
devices can be cycled as quickly for Writes as for Reads.
READ TIMING
The read timing on these asynchronous devices is straight-
forward. DataOUT is held low until the device is selected by
Chip Select (CS). The Address (ADDR) settles and data
appears on the output after time t
AA
. Note that DataOUT is
held for a short time (t
OH
) after the address begins to change
for the next access, then ambiguous data is on the bus until a
new time t
AA
.
4
IDT10514, IDT100514, IDT101514
HIGH-SPEED BiCMOS ECL STATIC RAM 1M (256K x 4-BIT) SRAM
COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS
(Over the AC Operating Range)
S10
Symbol
t
ACS
t
RCS
t
AA
t
OH
Parameter
(1)
Chip Select Access Time
Chip Select Recovery Time
Address Access Time
Data Hold from Address
Change
Read Cycle
S12
S15
Min. Max. Min. Max. Min. Max. Unit
ADV
INFO
—
—
5
5
—
—
—
2.5
6
6
12
—
—
—
—
2.5
7
7
15
—
ns
ns
ns
ns
2786 tbl 07
—
10
—
2.5
NOTE:
1. Input and Output reference level is 50% point of waveform.
READ CYCLE GATED BY CHIP SELECT (1, 2)
CS
t
ACS
DATA
OUT
2786 drw 09
t
RCS
READ CYCLE GATED BY ADDRESS (1, 3)
ADDR
t
AA
t
OH
DATA
OUT
2786 drw 10
NOTE:
1. WE is high for read cycle.
2. Address valid prior to or minimum of tAA-tACS beforeCS active.
3. CS active prior to or minimum tAA-tACS after address valid.
5
