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IDT49FCT806CTPY8

Low Skew Clock Driver, FCT Series, 0 True Output(s), 5 Inverted Output(s), CMOS, PDSO20, SSOP-20

器件类别:逻辑    逻辑   

厂商名称:IDT (Integrated Device Technology)

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
IDT (Integrated Device Technology)
零件包装代码
SSOP
包装说明
SSOP-20
针数
20
Reach Compliance Code
not_compliant
其他特性
MONITOR OUTPUT; MAX PART TO PART SKEW = 1NS
系列
FCT
输入调节
SCHMITT TRIGGER
JESD-30 代码
R-PDSO-G20
JESD-609代码
e0
长度
7.2 mm
负载电容(CL)
50 pF
逻辑集成电路类型
LOW SKEW CLOCK DRIVER
最大I(ol)
0.048 A
湿度敏感等级
1
功能数量
2
反相输出次数
5
端子数量
20
实输出次数
最高工作温度
70 °C
最低工作温度
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SSOP
封装等效代码
SSOP20,.3
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, SHRINK PITCH
峰值回流温度(摄氏度)
240
电源
5 V
Prop。Delay @ Nom-Sup
4.5 ns
传播延迟(tpd)
4.5 ns
认证状态
Not Qualified
Same Edge Skew-Max(tskwd)
0.5 ns
座面最大高度
2 mm
最大供电电压 (Vsup)
5.25 V
最小供电电压 (Vsup)
4.75 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn85Pb15)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
5.3 mm
文档预览
IDT49FCT806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
FAST CMOS
BUFFER/CLOCK DRIVER
IDT49FCT806BT/CT
FEATURES:
0.5 MICRON CMOS Technology
Guaranteed low skew < 500ps (max.)
Very low duty cycle distortion < 600ps (max.)
Low CMOS power levels
TTL compatible inputs and outputs
TTL level output voltage swings
High drive: -32mA I
OH
, +48mA I
OL
Two independent output banks with 3-state control
1:5 fanout per bank
"Heartbeat" monitor output
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• Available in the following packages:
– Commercial: QSOP, SOIC, SSOP
– Military: CERDIP, LCC
DESCRIPTION:
This buffer/clock driver is built using advanced dual metal CMOS
technology. The FCT806T is an inverting clock driver consisting of two
banks of drivers. Each bank drives five TTL output buffers from a standard
TTL compatible input. This part has extremely low output skew, pulse skew,
and package skew. The device has a “heart-beat” monitor for diagnostics
and PLL driving. The monitor output is identical to all other outputs and
complies with the output specifications in this document.
The FCT806T is designed for fast, clean edge rates to provide accurate
clock distribution in high speed systems.
FUNCTIONAL BLOCK DIAGRAM
OE
A
IN
A
5
OA
1
-OA
5
IN
B
5
OB
1
-OB
5
OE
B
MON
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
c
2000
Integrated Device Technology, Inc.
JULY 2000
DSC-4772/2
IDT49FCT806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
OA
2
OA
1
OB
1
V
CC
V
CC
INDEX
V
CC
OA
1
OA
2
OA
3
GND
OA
4
OA
5
GND
(1)
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
OB
1
OB
2
OB
3
GND
OB
4
OB
5
MON
OE
B
IN
B
3
OA
3
GND
OA
4
OA
5
GND
(1)
2
1
20 19
18
17
16
15
14
OB
2
OB
3
GND
OB
4
OB
5
4
5
6
7
8
9
OE
A
10 11 12 13
MON
Outputs
OE
A
IN
A
QSOP/ SOIC/ SSOP/ CERDIP
TOP VIEW
NOTE:
1. Pin 8 is internally connected to GND. To insure compatibility with all products, pin
8 should be connected to GND at the board level.
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
I
OUT
Description
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–65 to +150
–60 to +120
Unit
V
°C
mA
PIN DESCRIPTION
Pin Names
OE
A
,
OE
B
IN
A
, IN
B
OAx, OBx
MON
Clock Inputs
Clock Outputs
Monitor Output
Description
3-State Output Enable Inputs (Active LOW)
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
FUNCTION TABLE
(1)
Inputs
OE
A
,
OE
B
IN
A
, IN
B
L
H
L
H
OAx, OBx
H
L
Z
Z
L
L
MON
H
L
H
L
CAPACITANCE
(T
A
= +25 C, f = 1.0MHz)
O
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
4.5
5.5
Max.
6
8
Unit
pF
pF
H
H
NOTE:
1. H = HIGH
L = LOW
Z = High-Impedance
NOTE:
1. This parameter is measured at characterization but not tested.
2
OE
B
IN
A
IN
B
IDT49FCT806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= 0°C to +70°C, V
CC
= 5V ± 5%: Military: T
A
= -55°C to +125°C, V
CC
= 5V ± 10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
I
V
IK
I
OS
V
OH
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(5)
Input LOW Current
(5)
High Impedance Output Current
(3-State Output Pins)
Input HIGH Current
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –12mA MIL
I
OH
= –15mA COM'L
I
OH
= –24mA MIL
I
OH
= –32mA COM'L
(4)
V
OL
I
OFF
V
H
I
CCL
I
CCH
I
CCZ
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. Duration of the condition should not exceed one second.
5. The test limit for this parameter is ±5µA at T
A
= -55°C.
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
CC
= Max.
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
V
CC
= Max., V
I
= V
CC
(Max.)
Min.
2
–60
2.4
2
Typ.
(2)
–0.7
–120
3.3
3
0.3
150
5
Max.
0.8
±1
±1
±1
±1
±1
–1.2
–255
0.55
±1
500
Unit
V
V
µA
µA
µA
µA
V
mA
V
V
V
µA
mV
µA
Output LOW Voltage
Input/Output Power Off Leakage
(5)
Input Hysteresis for all inputs
Quiescent Power Supply Current
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OL
= 32mA MIL
I
OL
= 48mA COM'L
V
CC
= 0V, V
IN
or V
O
4.5V
V
CC
= Max., V
IN
= GND or V
CC
3
IDT49FCT806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
A
=
OE
B
= GND
50% Duty Cycle
I
C
Total Power Supply Current
(6)
V
CC
= Max.
Outputs Open
f
O
= 25MHz
50% Duty Cycle
OE
A
=
OE
B
= V
CC
Mon. Output Toggling
V
CC
= Max.
Outputs Open
f
O
= 50MHz
50% Duty Cycle
OE
A
=
OE
B
= GND
Eleven Outputs Toggling
NOTES:
1.
2.
3.
4.
5.
For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
Typical values are at V
CC
= 5V, +25°C ambient.
Per TTL driven input (V
IN
= 3.4V); all other inputs at V
CC
or GND.
This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
Values for these conditions are examples of the I
C
formula. These limits are guaranteed but not tested.
6.
I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
O
N
O
)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
I
N
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
O
= Output Frequency
N
O
= Number of Outputs at f
O
All currents are in milliamps and all frequencies are in megahertz.
Test Conditions
(1)
Min.
Typ.
(2)
0.5
60
Max.
2
100
Unit
mA
µA/MHz
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
1.5
3
1.8
4
33
55.5
(5)
mA
33.5
57.5
(5)
4
IDT49FCT806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE - MILITARY
(1,2)
FCT806BT
Symbol
t
PLH
t
PHL
t
R
t
F
t
SK(O)
t
SK(P)
t
SK(PP)
Parameter
Propagation Delay
IN
A
to
OAx,
IN
B
to
OBx
Output Rise Time
Output Fall Time
Output skew: skew between outputs of all banks of
same package (inputs tied together)
Pulse skew: skew between opposite transitions
of same output (|t
PHL -–
t
PLH
|)
Part-to-part skew: skew between outputs of different
packages at same power supply voltage,
temperature, package type and speed grade
Output Enable Time
OE
A
to
OAx, OE
B
to
OBx
Output Disable Time
OE
A
to
OAx, OE
B
to
OBx
Conditions
(3)
C
L
= 50pF
R
L
= 500Ω
Min
.
(4)
1.5
Max
.
5.7
2
1.5
0.9
0.9
1.5
1.5
FCT806CT
Min
.
(4)
Max
.
5.2
2
1.5
0.7
0.8
1.2
Unit
ns
ns
ns
ns
ns
ns
t
PZL
t
PZH
t
PLZ
t
PHZ
1.5
1.5
6.5
6.5
1.5
1.5
6
6
ns
ns
NOTES:
1. t
PLH
, t
PHL
, and t
SK
(pp) are production tested. All other parameters are guaranteed but not production tested.
2. Propagation delay range indicated by Min. and Max. limit is dues to Vcc, operating temperature, and process parameters. These propagation delay limits do not imply
skew.
3. See Test Circuits and Waveforms.
4. Minimum limits are guaranteed but not tested on Propagation Delays.
SWITCHING CHARACTERISTICS OVER OPERATING RANGE - COMMERCIAL
(1,2)
FCT806BT
Symbol
t
PLH
t
PHL
t
R
t
F
t
SK(O)
t
SK(P)
t
SK(PP)
Parameter
Propagation Delay
IN
A
to
OAx,
IN
B
to
OBx
Output Rise Time
Output Fall Time
Output skew: skew between outputs of all banks of
same package (inputs tied together)
Pulse skew: skew between opposite transitions
of same output (|t
PHL -–
t
PLH
|)
Part-to-part skew: skew between outputs of different
packages at same power supply voltage,
temperature, package type and speed grade
t
PZL
t
PZH
t
PLZ
t
PHZ
Output Enable Time
OE
A
to
OAx, OE
B
to
OBx
Output Disable Time
OE
A
to
OAx, OE
B
to
OBx
1.5
1.5
6
6
1.5
1.5
5
5
ns
ns
Conditions
(3)
C
L
= 50pF
R
L
= 500Ω
Min
.
(4)
1.5
Max
.
5
1.5
1.5
0.7
0.7
1.2
1.5
FCT806CT
Min
.
(4)
Max
.
4.5
1.5
1.5
0.5
0.6
1
Unit
ns
ns
ns
ns
ns
ns
NOTES:
1. t
PLH
, t
PHL
, and t
SK
(pp) are production tested. All other parameters are guaranteed but not production tested.
2. Propagation delay range indicated by Min. and Max. limit is dues to Vcc, operating temperature, and process parameters. These propagation delay limits do not imply
skew.
3. See Test Circuits and Waveforms.
4. Minimum limits are guaranteed but not tested on Propagation Delays.
5
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参数对比
与IDT49FCT806CTPY8相近的元器件有:IDT49FCT806CTQ8、IDT49FCT806BTSO8、IDT49FCT806BTQ8。描述及对比如下:
型号 IDT49FCT806CTPY8 IDT49FCT806CTQ8 IDT49FCT806BTSO8 IDT49FCT806BTQ8
描述 Low Skew Clock Driver, FCT Series, 0 True Output(s), 5 Inverted Output(s), CMOS, PDSO20, SSOP-20 Low Skew Clock Driver, FCT Series, 0 True Output(s), 5 Inverted Output(s), CMOS, PDSO20, QSOP-20 Low Skew Clock Driver, FCT Series, 0 True Output(s), 5 Inverted Output(s), CMOS, PDSO20, SOIC-20 Low Skew Clock Driver, FCT Series, 0 True Output(s), 5 Inverted Output(s), CMOS, PDSO20, QSOP-20
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 SSOP QSOP SOIC QSOP
包装说明 SSOP-20 QSOP-20 SOIC-20 QSOP-20
针数 20 20 20 20
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
系列 FCT FCT FCT FCT
输入调节 SCHMITT TRIGGER SCHMITT TRIGGER SCHMITT TRIGGER SCHMITT TRIGGER
JESD-30 代码 R-PDSO-G20 R-PDSO-G20 R-PDSO-G20 R-PDSO-G20
JESD-609代码 e0 e0 e0 e0
长度 7.2 mm 8.65 mm 12.8 mm 8.65 mm
负载电容(CL) 50 pF 50 pF 50 pF 50 pF
逻辑集成电路类型 LOW SKEW CLOCK DRIVER LOW SKEW CLOCK DRIVER LOW SKEW CLOCK DRIVER LOW SKEW CLOCK DRIVER
最大I(ol) 0.048 A 0.048 A 0.048 A 0.048 A
湿度敏感等级 1 1 1 1
功能数量 2 2 2 2
反相输出次数 5 5 5 5
端子数量 20 20 20 20
最高工作温度 70 °C 70 °C 70 °C 70 °C
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SSOP SSOP SOP SSOP
封装等效代码 SSOP20,.3 SSOP20,.25 SOP20,.4 SSOP20,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE, SHRINK PITCH
电源 5 V 5 V 5 V 5 V
Prop。Delay @ Nom-Sup 4.5 ns 4.5 ns 5 ns 5 ns
传播延迟(tpd) 4.5 ns 4.5 ns 5 ns 5 ns
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
Same Edge Skew-Max(tskwd) 0.5 ns 0.5 ns 0.7 ns 0.7 ns
座面最大高度 2 mm 1.75 mm 2.65 mm 1.75 mm
最大供电电压 (Vsup) 5.25 V 5.25 V 5.25 V 5.25 V
最小供电电压 (Vsup) 4.75 V 4.75 V 4.75 V 4.75 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.635 mm 1.27 mm 0.635 mm
端子位置 DUAL DUAL DUAL DUAL
宽度 5.3 mm 3.9116 mm 7.5 mm 3.9116 mm
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