FAST CMOS
BUFFER/CLOCK DRIVER
Integrated Device Technology, Inc.
IDT49FCT805BT/CT
IDT49FCT806BT/CT
FEATURES:
0.5 MICRON CMOS Technology
Guaranteed low skew < 500ps (max.)
Very low duty cycle distortion < 600ps (max.)
Low CMOS power levels
TTL compatible inputs and outputs
TTL level output voltage swings
High drive: -32mA I
OH
, 48mA I
OL
Two independent output banks with 3-state control
1:5 fanout per bank
‘Heartbeat’ monitor output
ESD > 2000V per MIL-STD-883, Method 3015;
> 200V using machine model (C = 200pF, R = 0)
• Available in DIP, SOIC, SSOP, QSOP, Cerpack and
LCC packages
•
•
•
•
•
•
•
•
•
•
•
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT49FCT805BT/CT and IDT49FCT806BT/CT are
clock drivers built using advanced dual metal CMOS technol-
ogy. The IDT49FCT805BT/CT is a non-inverting clock driver
and the IDT49FCT806BT/CT is an inverting clock driver. Each
device consists of two banks of drivers. Each bank drives five
output buffers from a standard TTL compatible input. The
805BT/CT and 806BT/CT have extremely low output skew,
pulse skew, and package skew. The devices has a "heart-
beat" monitor for diagnostics and PLL driving. The MON
output is identical to all other outputs and complies with the
output specifications in this document. The 805BT/CT and
806BT/CT offer low capacitance inputs with hysteresis.
FUNCTIONAL BLOCK DIAGRAMS
IDT49FCT805T
IDT49FCT806T
OE
A
OE
A
IN
A
5
OA
1
-OA
5
IN
A
5
OA
1
-OA
5
IN
B
5
OB
1
-OB
5
IN
B
5
OB
1
-OB
5
OE
B
MON
OE
B
MON
2920 drw 01
2920 drw 02
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996
Integrated Device Technology, Inc.
OCTOBER 1995
DSC-2920/5
9.2
1
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
IDT49FCT805T
OA
2
OA
1
V
CC
OA
1
OA
2
OA
3
GND
OA
4
OA
5
GND
OE
A
IN
A
1
2
3
4
5
6
7
8
9
10
P20-1
D20-1
SO20-2
SO20-7
SO20-8
&
E20-1
20
19
18
17
16
15
14
13
12
11
V
CC
OB
1
OB
2
OB
3
GND
OB
4
OB
5
MON
OE
B
IN
B
INDEX
3
OA
3
GND
OA
4
OA
5
GND
4
5
6
7
8
2
1
20 19
18
17
OB
2
OB
3
GND
OB
4
OB
5
L20-2
OB
1
16
15
14
9 10 11 12 13
V
CC
IN
B
V
CC
OE
B
LCC
TOP VIEW
MON
2920 drw 04
OE
A
OA
2
INDEX
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
2920 drw 03
IDT49FCT806T
OA
1
IN
A
V
CC
OA
1
OA
2
OA
3
GND
OA
4
OA
5
GND
OE
A
IN
A
1
2
3
4
5
6
7
8
9
10
P20-1
D20-1
SO20-2
SO20-7
SO20-8
&
E20-1
20
19
18
17
16
15
14
13
12
11
V
CC
OB
1
OB
2
OB
3
GND
OB
4
OB
5
MON
OE
B
IN
B
OA
3
GND
OA
4
OA
5
GND
4
5
6
7
8
3
2
1
20 19
18
17
L20-2
16
15
14
OB
2
OB
3
GND
OB
4
OB
5
9 10 11 12 13
OE
A
IN
A
IN
B
OE
B
LCC
TOP VIEW
MON
2920 drw 06
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
2920 drw 05
PIN DESCRIPTION
Pin Names
OE
A
,
OE
B
IN
A
, IN
B
OA
n
, OB
n
Description
3-State Output Enable Inputs (Active LOW)
Clock Inputs
Clock Outputs (FCT805T)
Clock Outputs (FCT806T)
Monitor Output (FCT805T)
Monitor Output (FCT806T)
2920 tbl 01
FUNCTION TABLE
(1)
Outputs
Inputs
49FCT805T
MON
L
H
L
H
L
H
L
H
L
H
Z
Z
49FCT806T
OE
A
,
OE
B
L
L
H
H
OB
1
V
CC
V
CC
IN
A
, IN
B
OA
n
, OB
n
OA
n
,
OB
n
H
L
Z
Z
MON
H
L
H
L
2920 tbl 02
OA
n
,
OB
n
MON
MON
NOTE:
1. H = HIGH, L = LOW, Z = High Impedance
9.2
2
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
(2)
Terminal Voltage
V
TERM
with Respect to
GND
V
TERM(3)
Terminal Voltage
with Respect to
GND
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
I
OUT
DC Output
Current
Commercial
–0.5 to +7.0
Military
–0.5 to +7.0
Unit
V
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
C
IN
Input
Capacitance
C
OUT
Output
Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
4.5
5.5
Max. Unit
6.0
pF
8.0
pF
–0.5 to V
CC
+0.5
0 to +70
–55 to +125
–55 to +125
–60 to +120
–0.5 to V
CC
+0.5
–55 to +125
–65 to +135
–65 to +150
–60 to +120
V
°C
°C
°C
mA
2920 lnk 04
NOTE:
1. This parameter is measured at characterization but not tested.
2920 lnk 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC
by +0.5V unless otherwise noted.
2. Input and V
CC
terminals.
3. Output and I/O terminals.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified
Commercial: T
A
= 0°C to +70°C, V
CC
= 5.0V
±
5%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V
±
10%
Symbol
V
IH
V
IL
I
I H
I
I L
I
OZH
I
OZL
I
I
V
IK
I
OS
V
OH
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(5)
Input LOW Current
(5)
High Impedance Output Current
(3-State Output pins)
(5)
Input HIGH Current
(5)
Clamp Diode Voltage
Short Circuit Current
Output HIGH Voltage
V
CC
= Min., I
IN
= –18mA
V
CC
= Max.
(3)
, V
O
= GND
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L.
I
OH
= –24mA MIL.
I
OH
= –32mA COM'L.
(4)
V
CC
= Min.
I
OL
= 32mA MIL.
V
IN
= V
IH
or V
IL
I
OL
= 48mA COM'L.
V
CC
= 0V, V
IN
or V
O
≤
4.5V
—
V
CC
= Max., V
IN
= GND or V
CC
V
CC
= Min.
V
IN
= V
IH
or V
IL
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
CC
= Max.
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
V
CC
= Max., V
I
= V
CC
(Max.)
Min.
2.0
—
—
—
—
—
—
—
–60
2.4
2.0
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
–0.7
–120
3.3
3.0
0.3
—
150
5
Max.
—
0.8
Unit
V
V
±
1
±
1
±
1
±
1
±
1
–1.2
–225
—
—
0.55
µ
A
µ
A
µ
A
µ
A
µ
A
V
mA
V
V
OL
I
OFF
V
H
Output LOW Voltage
Input/Output Power Off Leakage
(5)
Input Hysteresis for all inputs
Quiescent Power Supply Current
V
±
1
—
500
µ
A
mV
I
CCL
I
CCH
I
CCZ
µ
A
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is
±
5µA at T
A
= –55°C.
2920 lnk 05
9.2
3
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Parameter
∆I
CC
I
CCD
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
A
=
OE
B
= GND
50% Duty Cycle
V
CC
= Max.
Outputs Open
fo = 25MHz
50% Duty Cycle
OE
A
=
OE
B
=V
CC
Mon. Output Toggling
V
CC
= Max.
Outputs Open
fo = 50MHz
50% Duty Cycle
OE
A
=
OE
B
= GND
Eleven Outputs
Toggling
V
IN
= V
CC
V
IN
= GND
Test Conditions
(1)
Min.
—
—
Typ.
(2)
0.5
60
Max.
2.0
100
Unit
mA
µ
A/
MHz/bit
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
1.5
3.0
mA
—
1.8
4.0
—
33
55.5
(5)
—
33.5
57.5
(5)
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input; (V
IN
= 3.4V); all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
O
N
O
)
I
CC
= Quiescent Current (I
CCL,
I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
O
= Output Frequency
N
O
= Number of Outputs at f
O
All currents are in milliamps and all frequencies are in megahertz.
2920 tbl 06
9.2
4
IDT49FCT805BT/CT, 806BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
(3,4)
IDT49FCT805BT/806BT
Com'l.
Symbol
Parameter
t
PLH
Propagation Delay
IN
A
to OA
n
, IN
B
to OB
n
t
PHL
t
R
Output Rise Time
t
F
t
SK
(o)
t
SK
(p)
t
SK
(t)
Output Fall Time
Output skew: skew between outputs of all
banks of same package (inputs tied together)
Pulse skew: skew between opposite
transitions of same output (|t
PHL
–t
PLH
|)
Package skew: skew between outputs of
different packages at same power supply
voltage, temperature, package type and
speed grade
Output Enable Time
OE
A
to OA
n
,
OE
B
to OB
n
Output Disable Time
OE
A
to OA
n
,
OE
B
to OB
n
Mil.
IDT49FCT805CT/806CT
Com'l.
Mil.
Unit
ns
ns
ns
ns
ns
ns
Condition
(1)
Min
.(2)
Max. Min
.(2)
Max. Min
.(2)
Max. Min
.(2)
Max.
C
L
= 50pF
1.5
5.0
1.5
5.7
1.5
4.5
1.5
5.2
R
L
= 500Ω
—
1.5
—
2.0
—
1.5
—
2.0
—
—
—
—
1.5
0.7
0.7
1.2
—
—
—
—
1.5
0.9
0.9
1.5
—
—
—
—
1.5
0.5
0.6
1.0
—
—
—
—
1.5
0.7
0.8
1.2
t
PZL
t
PZH
t
PLZ
t
PHZ
1.5
1.5
6.0
6.0
1.5
1.5
6.5
6.5
1.5
1.5
5.0
5.0
1.5
1.5
6.0
6.0
ns
ns
2920 tbl 07
NOTES:
1. See test circuits and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. t
PLH
, t
PHL
, t
SK
(t) are production tested. All other parameters guaranteed but not production tested.
4. Propagation delay range indicated by Min. and Max. limit is due to V
CC
, operating temperature and process parameters. These propagation delay
limits do not imply skew.
9.2
5
